arXiv subjects

Dennis J. Klaassen

Publications and source records attributed to Dennis J. Klaassen.

4 recordsLinked to original sources

arXiv2026

Decorated electronic kagome lattice in twisted bilayer germanene

Artificial kagome lattices provide a route to electronic flat bands, geometric frustration, and correlation driven phases, but their realization in atomically controlled two-dimensional materials remains scarce. Here, we show that commensurate twisted bilayer germanene on Ge2Pt produces two electronically distinct large-angle moiré phases. Scanning tunneling microscopy measurements and density functional theory calculations reveal that commensurate twisted bilayers that are odd under an exchange of sublattices are semiconducting, whereas the twisted bilayers with an even parity are metallic. The twisted bilayers with an even parity host an empty state resonance that exhibits an emergent decorated kagome structure with a C3 symmetry. These results establish large-angle twisted germanene as a platform for engineering kagome-like electronic states in a buckled two-dimensional material.

cond-mat.mes-hall↗

arXiv2025

Electric-field control of zero-dimensional topological states in ultranarrow germanene nanoribbons

Reversible, all-electric control of symmetry-protected zero-dimensional modes has been a long-standing goal. In buckled honeycomb lattices, a perpendicular field couples to the staggered sublattice potential providing the required handle. We combine scanning tunneling microscopy and tight-binding theory to switch zero-dimensional topological end states reversibly on and off in ultranarrow germanene nanoribbons by tuning the electric field in the tunnel junction. Increasing the field switches off the end modes of topological two-hexagon wide ribbons, while the same field switches on zero-dimensional states in initially trivial three- and four-hexagon wide ribbons. This atomic scale platform realizes a proof-of-principle for a zero-dimensional topological field effect device, opening a path for ultrasmall memory, controllable qubits, and neuromorphic architectures.

cond-mat.mtrl-sci↗

arXiv2024

Realization of a one-dimensional topological insulator in ultrathin germanene nanoribbons

Realizing a one-dimensional (1D) topological insulator and identifying the lower dimensional limit of two-dimensional (2D) behavior are crucial steps toward developing high-density quantum state networks, advancing topological quantum computing, and exploring dimensionality effects in topological materials. Although 2D topological insulators have been experimentally realized, their lower dimensional limit and 1D counterparts remain elusive. Here, we fabricated and characterized arrays of zigzag-terminated germanene nanoribbons, a 2D topological insulator with a large topological bulk gap. The electronic properties of these nanoribbons strongly depend on their width, with topological edge states persisting down to a critical width (approx. 2 nm), defining the limit of 2D topology. Below this threshold, contrary to the tenfold way classification, we observe zero-dimensional (0D) states localized at the ends of the ultrathin nanoribbons. These end states, topologically protected by time-reversal and mirror symmetries, mark the first realization of a 1D topological insulator with strong spin-orbit coupling. Our findings establish germanene nanoribbons as a platform for investigating 1D topology and dimensionality effects in topological materials.

cond-mat.mes-hall↗

arXiv2024

Moiré-modulated band gap and van Hove singularities in twisted bilayer germanene

Twisting bilayers of two-dimensional topological insulators has the potential to create unique quantum states of matter. Here, we successfully synthesized a twisted bilayer of germanene on Ge2Pt(101) with a 21.8$^o$ degrees twist angle, corresponding to a commensurate ($\sqrt{7} \times \sqrt{7}$) structure. Using scanning tunneling microscopy and spectroscopy, we unraveled the structural and electronic properties of this configuration, revealing a moiré-modulated band gap and a well-defined edge state. This band gap opens at AB/BA stacked sites and closes at AA stacked sites, a phenomenon attributed to the electric field induced by the scanning tunneling microscopy tip. Our study further revealed two van Hove singularities at -0.8 eV and +1.04 eV, resulting in a Fermi velocity of $(8 \pm 1) \times 10^5$ m/s. Our tight-binding results uncover a unique quantum state, where the topological properties could be regulated through an electric field, potentially triggering two topological phase transitions.

cond-mat.mes-hall↗