arXiv subjects

Dennis Meier

Publications and source records attributed to Dennis Meier.

At least 19 recordsLinked to original sources

arXiv2026

Photo-induced currents and short-term memory for reservoir computing in a ferroelectric semiconductor

Physical reservoir computing represents an energy efficient approach for processing temporal signals by exploiting the intrinsic nonlinear dynamics and fading memory of a physical system. Recently, ferroelectric semiconductors moved into focus as reservoir materials motivated by their versatile electronic responses to external stimuli. Here, we explore the fundamental possibility to recognize time-varying light pulses via photo-induced currents, using the small-band-gap p-type semiconductor ErMnO$_3$ as a model system. Under white light illumination, ErMnO$_3$ exhibits non-linearly evolving photo-induced currents and controllable relaxation dynamics that naturally realize the high-dimensional projection and fading memory capabilities required for reservoir computing. The reservoir capability of ErMnO$_3$ is reflected by the improved recognition accuracy of "Past" input pulses, which increases from ~33% to ~93% after applying reservoir transformation to the input signal. The results present ferroelectric hexagonal manganites as a promising platform for photo-induced current-based reservoir computing and highlight the potential of light-driven oxide semiconductors for temporal information processing.

cond-mat.mtrl-sci↗

arXiv2026

Atom Probe Tomography as an Emerging Tool for Understanding Defect-driven Mechanisms in HfO$_{2}$-based Ferroelectrics

HfO$_{2}$-based ferroelectrics are essential for the next generation of CMOS-compatible memory and logic devices, yet their performance is governed by a complex interplay between oxygen vacancies, dopants, and structural defects that remains an active area of investigation. These defects shape the function-critical dynamic phenomena, such as polar phase stabilization, wake-up, fatigue, and imprint. In this Perspective, we review the limitations of established high-resolution structural characterization techniques and propose atom probe tomography (APT) as a powerful tool for the three-dimensional (3D), atomic-scale mapping of all constituent species in hafnia-based ferroelectric systems. By resolving individual dopants, vacancy clustering, and interfacial segregation, APT can facilitate a quantitative understanding of defect-property relations in hafnia-based ferroelectrics. We discuss current experimental challenges for APT application to ferroelectric oxides, demonstrate a proof-of-concept of atomic-scale reconstruction in a hafnia-based device stack, and highlight the potential of APT to guide the development of ferroelectric structures with enhanced reliability and performance.

cond-mat.mtrl-sci↗

arXiv2026

Beyond Scalar Objectives: Expert-Feedback-Driven Autonomous Experimentation for Scientific Discovery at the Nanoscale

Self-driving laboratories or autonomous experimentation are emerging as transformative platforms for accelerating scientific discovery. Bayesian optimization (BO) is among the most widely used machine learning frameworks for these purposes, but these BO-based frameworks rely on predefined scalar descriptors to guide experimentation. In many situations, the determination of an appropriate scalar descriptor can be challenging, and may fail to capture subtle yet scientifically important phenomena apparent to experts with interdisciplinary insight. To overcome this limitation, here we develop deep-kernel pairwise learning (DKPL), an approach for autonomous microscopy experiments which incorporates human expertise and interdisciplinary scientific knowledge into an active learning loop. Instead of relying on explicit scalar objectives, DKPL enables experts to directly evaluate which experimental output is more promising using interdisciplinary knowledge. DKPL then learns a latent utility function from these expert judgements to guide subsequent autonomous microscopy experiments. We demonstrate DKPL's performance in learning physically meaningful nanoscale structures while effectively prioritizing high-information measurement regions using an experimental model dataset with known ground truth. We further apply DKPL to analyze the character of ferroelectric domain walls, where we find DKPL capable of distinguishing between high and low characteristic domain-wall angles in bismuth ferrite, and able to discover both head-to-head and tail-to-tail domain-wall character in erbium manganite. This development establishes an approach to integrate expert knowledge into autonomous microscopy experiments and demonstrates a pathway toward expert-guided self-driving laboratories capable of addressing scientific problems beyond the limits of scalar-metrics-driven learning.

cs.LG↗

arXiv2026

Control of helix orientation in chiral magnets via lateral confinement

Helimagnetic materials offer a versatile platform for spin-based device concepts owing to their long-range, tunable spiral order. Here, we demonstrate controlled manipulation of the helimagnetic propagation vector q by geometrical confinement, using FeGe as a model DMI-driven chiral magnet. Micromagnetic simulations based on the nonlinear sigma model reveal that open boundaries give rise to a chiral surface twist acting as an effective surface anisotropy, which dictates the preferred helix orientation in the absence of magnetostatic shape effects. This geometry-induced anisotropy is quantitatively captured by an analytical model derived from the DMI boundary condition. Magnetic force microscopy measurements on focused-ion-beam structured FeGe confirm the predicted orientation behavior and establish geometry-controlled helimagnetic order as a robust, tunable mechanism for steering DMI-stabilized spin-spiral states. The concept provides a general route toward device-level control of chiral magnetic order in of non-centrosymmetric systems.

cond-mat.mtrl-sci↗

arXiv2026

Correlated domain and crystallographic orientation mapping in uniaxial ferroelectric polycrystals by interferometric vector piezoresponse force microscopy

Ongoing advances in scanning probe microscopy techniques are continually expanding the possibilities for nanoscale characterization and correlated studies of functional materials. Here, we demonstrate how a recent extension of piezoresponse force microscopy (PFM), known as interferometric vector PFM, can be utilized for simultaneously mapping the local crystallographic orientations and the domain structure of distributed grains in uniaxial ferroelectric polycrystals. By shifting the laser beam position on the cantilever, direction-dependent piezoresponse signals are acquired analogous to classical vector PFM, but without the need to rotate the sample. Using polycrystalline ErMnO$_{3}$ as a model system, we demonstrate that the reconstructed piezoresponse vectors correlate one-to-one with the crystallographic orientations of the micrometer-sized grains, carrying grain-orientation and domain-related information. We establish a versatile approach for rapid, multimodal characterization of polycrystalline uniaxial ferroelectrics, enabling automated, high-throughput reconstruction of polarization and grain orientations with nanoscale precision.

cond-mat.mtrl-sci↗

arXiv2026

Chemical heterogeneity at conducting ferroelectric domain walls

Natural interfaces in ferroic oxides have developed into versatile playgrounds for studying electronic correlation effects in 2D systems. The microscopic origin of the emergent local electronic properties is often debated, however, as quantitative atomic-scale characterization remains challenging. A prime example is enhanced conductivity at ferroelectric domain walls, attributed to mechanisms ranging from local band gap reduction to point defect accumulations. Here, we resolve the microscopic mechanisms for domain wall conduction in the ferroelectric model system BiFeO3, by combining transport measurements with atom probe tomography to quantify the local chemical composition and correlate it with the electrical properties. Significant chemical variations along the walls are observed, demonstrating an outstanding chemical flexibility at domain walls, which manifest in spatially varying physical properties. The results give a unifying explanation for the diverse electronic behavior observed and establish the fundamental notion that multiple conduction mechanisms can coexist within individual domain walls.

cond-mat.mtrl-sci↗

arXiv2025

Controlling Skyrmion Lattice Orientation with Local Magnetic Field Gradients

Precise control over the formation and arrangement of magnetic skyrmion lattices is essential for understanding their emergent behavior and advancing their integration into spintronic and magnonic devices. We report on a simple and minimally invasive technique to nucleate and manipulate skyrmion lattices in soft magnetic CoFeB using single-pass magnetic force microscopy (MFM). By tuning the scan-line spacing to match the intrinsic stripe domain periodicity, the stray field gradient from the MFM tip induces reversible transitions from stripe domains to isolated skyrmions and locally ordered lattices. The resulting skyrmion positions are extracted to compute the local orientational order parameter $\psi_6$, enabling quantitative evaluation of lattice ordering. A systematic improvement in $\langle |\psi_6| \rangle$ is observed with repeated scanning, indicating a transition from a disordered state to ordered hexagonal lattices. Furthermore, we demonstrate that the lattice orientation can be deterministically rotated by changing the scanning direction, as confirmed by both real-space analysis and fast Fourier transformations. This method enables the controlled creation, reordering, and deletion of metastable skyrmion textures on demand. Our approach establishes a practical and accessible platform for studying two-dimensional phase behavior in topological spin systems, offering direct and reconfigurable control over lattice symmetry, order, and orientation.

cond-mat.mes-hall↗

arXiv2025

Hybrid antiferroelectric-ferroelectric domain walls in noncollinear antipolar oxides

Antiferroelectrics are emerging as advanced functional materials and are fertile ground for unusual electric effects. For example, they enhance the recoverable energy density in energy storage applications and give rise to large electromechanical responses. Here, we demonstrate noncollinearity in dipolar order as an additional degree of freedom, unlocking physical properties that are symmetry-forbidden in classical antiferroelectrics. We show that noncollinear order of electric dipole moments in K$_3$[Nb$_3$O$_6$|(BO$_3$)$_2$] leads to a coexistence of antiferroelectric and ferroelectric behaviors. Besides the double-hysteresis loop observed in antiferroelectrics, a pronounced piezoresponse and electrically switchable domains are observed, separated by atomically sharp and micrometer-long charged domain walls. Hybrid antiferroelectric-ferroelectric responses are expected in a wide range of noncollinear systems, giving a new dimension to the research on antiferroelectrics and multifunctional oxides in general.

cond-mat.mtrl-sci↗

arXiv2025

Domain-wall driven suppression of thermal conductivity in a ferroelectric polycrystal

A common strategy for reducing thermal conductivity of polycrystalline systems is to increase the number of grain boundaries. Indeed, grain boundaries enhance the probability of phonon scattering events, which has been applied to control the thermal transport in a wide range of materials, including hard metals, diamond, oxides and 2D systems such as graphene. Here, we report the opposite behavior in improper ferroelectric ErMnO3 polycrystals, where the thermal conductivity decreases with increasing grain size. We attribute this unusual relationship between heat transport and microstructure to phonon scattering at ferroelectric domain walls. The domain walls are more densely packed in larger grains, leading to an inversion of the classical grain-boundary-dominated transport behavior. Our findings open additional avenues for microstructural engineering of materials for thermoelectric and thermal management applications, enabling simultaneous control over mechanical, electronic, and thermal properties.

cond-mat.mtrl-sci↗

arXiv2025

Magnetoelectric training of multiferroic domains in Mn$_2$GeO$_4$

Magnetoelectric multiferroics promise direct cross-control between coexisting ferroelectric and ferromagnetic orders, which is of interest for applications in magnetism and spintronics. A particularly interesting type of cross-control is found in spin-spiral multiferroic Mn$_2$GeO$_4$, where a ferroelectric multi-domain distribution can be globally inverted by a single magnetic field sweep. In this work we consider the initial domain evolution from zero-field cooling, imaging the evolution of domains under both magnetic and electric fields via optical second harmonic generation. We find that polarization and magnetization domains form independently when entering the multiferroic phase, and a single deterministic initialisation procedure, spanning three quarters of a field cycle, is required to achieve reliable magnetoelectric cross-coupling. This initialisation behaviour originates from a deterministic pathway from metastable to equilibrium domain patterns, in contrast to more common and less reliable domain "training" procedures that require repeated field cycles. Understanding the initial domain evolution thus enables reliable cross-control in magnetoelectric devices with highly interlinked order parameters.

cond-mat.mtrl-sci↗

arXiv2025

Local doping of an oxide semiconductor by voltage-driven splitting of anti-Frenkel defects

Layered oxides exhibit high ionic mobility and chemical flexibility, attracting interest as cathode materials for lithium-ion batteries and the pairing of hydrogen production and carbon capture. Recently, layered oxides emerged as highly tunable semiconductors. For example, by introducing anti-Frenkel defects, the electronic hopping conductance in hexagonal manganites was increased locally by orders of magnitude. Here, we demonstrate local acceptor and donor doping in Er(Mn,Ti)O$_3$, facilitated by the splitting of such anti-Frenkel defects under applied d.c. voltage. By combining density functional theory calculations, scanning probe microscopy, atom probe tomography, and scanning transmission electron microscopy, we show that the oxygen defects readily move through the layered crystal structure, leading to nano-sized interstitial-rich (p-type) and vacancy-rich (n-type) regions. The resulting pattern is comparable to dipolar npn-junctions and stable on the timescale of days. Our findings reveal the possibility of temporarily functionalizing oxide semiconductors at the nanoscale, giving additional opportunities for the field of oxide electronics and the development of transient electronics in general.

cond-mat.mtrl-sci↗

arXiv2024

Tailoring MBE Growth of c-Mn3Sn Directly on MgO (111): From Islands to Film

We present our study of (0001) oriented Mn$_3$Sn (c-Mn$_3$Sn) thin films synthesized directly on an MgO (111) substrate via molecular beam epitaxy. We identify a growth window where Mn$_3$Sn growth can be controlled through slight adjustments of the Mn flux, achieving either $\mu$m$^2$-sized high crystalline-quality islands or an almost completely continuous film. High-resolution X-ray diffraction results indicate that both films are highly (0001) oriented. The atomic resolution images show clear film-substrate interfaces displaying an epitaxial relationship. Scanning precession electron diffraction measurements reveal that the island featured sample has highly crystallized Mn$_3$Sn. The sample featuring a high continuity exhibits defects in some areas but retains the dominant Mn$_3$Sn structure. This work demonstrates a potential method for synthesizing high crystalline-quality Mn$_3$Sn films with substantial coverage, facilitating the study of Mn3Sn films without the influence of an additional buffer layer and promoting their application in integrated spintronics.

cond-mat.mtrl-sci↗

arXiv2024

Controlling electronic properties of hexagonal manganites through aliovalent doping and thermoatmospheric history

The family of hexagonal manganites is intensively studied for its multiferroicity, magnetoelectric coupling, improper ferroelectricity, functional domain walls, and topology-related scaling behaviors. It is established that these physical properties are co-determined by the cation sublattices and that aliovalent doping can readily be leveraged to modify them. The doping, however, also impacts the anion defect chemistry and semiconducting properties, which makes the system highly sensitive to the synthesis and processing conditions. Here, we study the electronic properties of YMnO3 as function of aliovalent cation doping and thermoatmospheric history, combining density functional theory calculations with thermopower and thermogravimetric measurements. We show that the charge carrier concentration and transport properties can be controlled via both aliovalent cation dopants and anion defects, enabling reversible switching between n-type and p-type conductivity. This tunability is of importance for envisaged applications of hexagonal manganites in, e.g. next-generation capacitors and domain-wall nanoelectronics, or as catalysts or electrodes in fuel cells or electrolyzers. Furthermore, our approach is transferrable to other transition metal oxides, providing general guidelines for controlling their semiconducting properties.

cond-mat.mtrl-sci↗

arXiv2024

AFM-based Functional Tomography-To Mill or not to Mill, that is the Question!

The electrical response of ferroelectric domain walls is often influenced by their geometry underneath the sample surface. Tomographic imaging in these material systems has therefore become increasingly important for its ability to correlate the surface-level functional response with subsurface domain microstructure. In this context, AFM-based tomography emerges as a compelling choice because of its simplicity, high resolution and robust contrast mechanism. However, to date, the technique has been implemented in a limited number of ferroelectric materials, typically to depths of a few hundred nanometers or on relatively soft materials, resulting in an unclear understanding of its capabilities and limitations. In this work, AFM tomography is carried out in YbMnO3, mapping its complex domain microstructure up to a depth of around 1.8 um along with its current pathways. A model is presented, describing the impact of interconnected domain walls within the network, which act as current dividers and codetermine how currents distribute. Finally, challenges such as tip-blunting and subsurface amorphisation are identified through TEM studies, and strategies to address them are also put forward. This study highlights the potential of AFM tomography and could spur interest within the ferroics community for its use in the investigation of similar material systems.

cond-mat.mtrl-sci↗

arXiv2023

Novel implementations for reservoir computing -- from spin to charge

Topological textures in magnetic and electric materials are considered to be promising candidates for next-generation information technology and unconventional computing. Here, we discuss how the physical properties of topological nanoscale systems, such as skyrmions and domain walls, can be leveraged for reservoir computing, translating non-linear problems into linearly solvable ones. In addition to the necessary requirements of physical reservoirs, the topological textures give new opportunities for the downscaling of devices, enhanced complexity, and versatile input and readout options. Our perspective article presents topological magnetic and electric defects as an intriguing platform for non-linear signal conversion, giving a new dimension to reservoir computing and in-materio computing in general.

physics.app-ph↗

arXiv2023

Non-destructive tomographic nanoscale imaging of ferroelectric domain walls

Extraordinary physical properties arise at polar interfaces in oxide materials, including the emergence of two-dimensional electron gases, sheet-superconductivity, and multiferroicity. A special type of polar interface are ferroelectric domain walls, where electronic reconstruction phenomena can be driven by bound charges. Great progress has been achieved in the characterization of such domain walls and, over the last decade, their potential for next-generation nanotechnology has become clear. Established tomography techniques, however, are either destructive or offer insufficient spatial resolution, creating a pressing demand for 3D imaging compatible with future fabrication processes. Here, we demonstrate non-destructive tomographic imaging of ferroelectric domain walls using secondary electrons. Utilizing conventional scanning electron microscopy (SEM), we reconstruct the position, orientation, and charge state of hidden domain walls at distances up to several hundreds of nanometers away from the surface. A mathematical model is derived that links the SEM intensity variations at the surface to the local domain wall properties, enabling non-destructive tomography with good noise tolerance on the timescale of seconds. Our SEM-based approach facilitates high-throughput screening of materials with functional domain walls and domain-wall-based devices, which is essential for monitoring during the production of device architectures and quality control in real-time.

cond-mat.mtrl-sci↗

arXiv2023

Observation of Antiferroelectric Domain Walls in a Uniaxial Hyperferroelectric

Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. Néel-, Bloch-, and vortex-like polar patterns have been observed, displaying strong similarities with the spin textures at magnetic domain walls. Here, we report the discovery of antiferroelectric domain walls in the uniaxial ferroelectric Pb$_{5}$Ge$_{3}$O$_{11}$. We resolve highly mobile domain walls with an alternating displacement of Pb atoms, resulting in a cyclic 180$^{\circ}$ flip of dipole direction within the wall. Density functional theory calculations reveal that Pb$_{5}$Ge$_{3}$O$_{11}$ is hyperferroelectric, allowing the system to overcome the depolarization fields that usually suppress antiparallel ordering of dipoles along the longitudinal direction. Interestingly, the antiferroelectric walls observed under the electron beam are energetically more costly than basic head-to-head or tail-to-tail walls. The results suggest a new type of excited domain-wall state, expanding previous studies on ferroelectric domain walls into the realm of antiferroic phenomena.

cond-mat.mtrl-sci↗

arXiv2023

Imaging and structure analysis of ferroelectric domains, domain walls, and vortices by scanning electron diffraction

Direct electron detectors in scanning transmission electron microscopy give unprecedented possibilities for structure analysis at the nanoscale. In electronic and quantum materials, this new capability gives access to, for example, emergent chiral structures and symmetry-breaking distortions that underpin functional properties. Quantifying nanoscale structural features with statistical significance, however, is complicated by the subtleties of dynamic diffraction and coexisting contrast mechanisms, which often results in low signal-to-noise and the superposition of multiple signals that are challenging to deconvolute. Here we apply scanning electron diffraction to explore local polar distortions in the uniaxial ferroelectric Er(Mn,Ti)O$_3$. Using a custom-designed convolutional autoencoder with bespoke regularization, we demonstrate that subtle variations in the scattering signatures of ferroelectric domains, domain walls, and vortex textures can readily be disentangled with statistical significance and separated from extrinsic contributions due to, e.g., variations in specimen thickness or bending. The work demonstrates a pathway to quantitatively measure symmetry-breaking distortions across large areas, mapping structural changes at interfaces and topological structures with nanoscale spatial resolution.

cond-mat.mtrl-sci↗