arXiv subjects

Deshun Hong

Publications and source records attributed to Deshun Hong.

12 recordsLinked to original sources

arXiv2025

Synthesis and transport properties of epitaxial Bi (111) films on GaAs (111) substrates

In recent decades, the growth of ultrathin epitaxial bismuth (Bi) films on various substrates has garnered interest due to their unique electronic properties. We report upon the growth and electrical transport properties of epitaxial Bi (111) films in the thickness range of 5-32 nm deposited directly on GaAs (111) substrates, without a buffer layer. The quality of Bi films is found to depend on conditions for substrate treatment using Ar+ ion-milling and annealing. Substrates milled at low ion beam currents display poor surface reconstruction after annealing, which hinders the growth of high-quality films. In contrast, substrates milled under optimized conditions led to reconstructed surfaces upon annealing, resulting in epitaxial Bi films with predominantly single-domain orientation. Although epitaxial films formed in both cases, transport measurements indicated significantly higher conductivity for films grown on optimally treated substrates. Measurements at low temperatures suggest that the transport properties are dominated by a surface state with high mobility electrons. Magneto-transport measurements suggest that conductivity and mobility improve progressively with increasing film thickness. For the thinnest 5 nm film, a hole-like state emerges, presumably as the electron-like state is gapped out. These results provide a robust methodology for growing high-quality epitaxial Bi films on GaAs (111) and offer insights into their unique transport properties, and our ability to tune them.

cond-mat.mtrl-sci↗

arXiv2025

Semiconducting behaviors at epitaxial Ca0.5TaO3 interfaces

Emergent phenomena take place in symmetry-breaking systems, notably the recently discovered two-dimensional electron gas and its tunable superconductivities near the KTaO3 interfaces. Here, we synthesized perovskite Ca0.5TaO3 films along both [001] and [111] orientations. Different from the KTaO3 system, Ca0.5TaO3 films show semiconducting behaviors when capped with LaAlO3 films in both [001] and [111] orientations. By growing films at higher temperatures, more oxygen vacancies can be introduced, and the carrier density can be tuned from ~ 1014 cm-2 to ~ 1016 cm-2. Another difference is that the superconducting transition temperature Tc in KTaO3 (111) increases linearly along with its carrier density, while the Ca0.5TaO3 (111) remains semiconducting when carrier density ranges from ~ 1014 cm-2 to ~ 1016 cm-2. Based on the density function theory calculation, Ca0.5TaO3 and KTaO3 show similar electronic band structures. According to the energy-dispersive X-ray spectroscopy, we found heavy Sr diffusion from the substrate to the Ca0.5TaO3 layer, which may destroy the interfacial conductivity. Our work demonstrates that besides the oxygen vacancies, electronic transport is sensitive to the atomic intermixing near the interface in tantulates.

cond-mat.mtrl-sci↗

arXiv2024

Ferromagnetism and structural phase transition in monoclinic FeGe film

Binary compound FeGe hosts multiple structures, from cubic and hexagonal to monoclinic. Compared to the well-known skyrmion lattice in the cubic phase and the antiferromagnetic charge-density wave in the hexagonal phase, the monoclinic FeGe is less explored. Here, we synthesized the monoclinic FeGe films on Al2O3 (001) and studied their structural, magnetic, and transport properties. X-ray diffraction and transmission electron microscopy characterizations indicate that the FeGe films are epitaxial to the substrate. Unlike the antiferromagnetic bulk, the monoclinic FeGe films are ferromagnetic with Curie-temperature as high as ~ 800 K, contributing to the anomalous Hall effect in the transport measurements. Similar to the hexagonal FeGe, we captured a structural phase transition in the monoclinic FeGe films at ~ 100 K in real and reciprocal spaces by transmission electron microscope. Our work enriches the phase diagram of the FeGe family and suggests that FeGe offers an ideal platform for studying multiphase transitions and related device applications.

cond-mat.mtrl-sci↗

arXiv2023

The challenges of measuring spin Seebeck noise

Just as electronic shot noise in driven conductors results from the granularity of charge and the statistical variation in the arrival times of charge carriers, there are predictions for fundamental noise in magnon currents due to angular momentum being carried by discrete excitations. The inverse spin Hall effect as a transduction mechanism to convert spin current into charge current raises the prospect of experimental investigations of such magnon shot noise. Spin Seebeck effect measurements have demonstrated the electrical detection of thermally driven magnon currents and have been suggested as an avenue for accessing spin current fluctuations. Using spin Seebeck structures made from yttrium iron garnet on gadolinium gallium garnet, we demonstrate the technical challenges inherent in such noise measurements. While there is a small increase in voltage noise in the inverse spin Hall detector at low temperatures associated with adding a magnetic field, the dependence on field orientation implies that this is not due to magnon shot noise. We describe theoretical predictions for the expected magnitude of magnon shot noise, highlighting ambiguities that exist. Further, we show that magnon shot noise detection through the standard inverse spin Hall approach is likely impossible due to geometric factors. Implications for future attempts to measure magnon shot noise are discussed.

cond-mat.mes-hall↗

arXiv2023

Low temperature spin Seebeck effect in non-magnetic vanadium dioxide

The spin Seebeck effect (SSE) is sensitive to thermally driven magnetic excitations in magnetic insulators. Vanadium dioxide in its insulating low temperature phase is expected to lack magnetic degrees of freedom, as vanadium atoms are thought to form singlets upon dimerization of the vanadium chains. Instead, we find a paramagnetic SSE response in VO2 films that grows as the temperature decreases below 50 K. The field and temperature dependent SSE voltage is qualitatively consistent with a general model of paramagnetic SSE response and inconsistent with triplet spin transport. Quantitative estimates find a spin Seebeck coefficient comparable in magnitude to that observed in strongly magnetic materials. The microscopic nature of the magnetic excitations in VO2 requires further examination.

cond-mat.str-el↗

arXiv2022

Tunable superconductivity at the oxide-insulator/KTaO$_3$ interface and its origin

Superconductivity forms out of the condensation of Cooper pairs of electrons. The mechanism by which Cooper pairs are created in non-conventional superconductors is often elusive because experimental signatures that connect a specific pairing mechanism to the properties of superconducting state are rare. The recently discovered superconducting oxide-insulator/KTaO$_3$ interface may offer clues about its origins. Here we observe distinct dependences of the superconducting transition temperature Tc on carrier density n$_{2D}$ for electron gases formed at KTaO$_3$ (111), (001) and (110) interfaces. For the KTaO$_3$ (111) interface, a remarkable linear dependence of Tc on n$_{2D}$ is observed over a range of nearly one order of magnitude. Further, our study of the dependence of superconductivity on gate electric fields reveals the role of the interface in mediating superconductivity, which also allows for a reversible electric switching of superconductivity at T = 2 K. We found that the extreme sensitivity of superconductivity to crystallographic orientation can be explained by Cooper pairing via inter-orbital interactions induced by the inversion-breaking transverse optical (TO1) phonons and quantum confinement. This mechanism is also consistent with the dependence of Tc on n$_{2D}$ at the KTaO$_3$ (111) interface. Our study may shed light on the pairing mechanism in other superconducting quantum-paraelectrics.

cond-mat.supr-con↗

arXiv2021

Giant Topological Hall Effect in van der Waals Heterostructures of CrTe2/Bi2Te3

Discoveries of interfacial topological Hall effect (THE) provide an ideal platform for exploring physics arising from the interplay between topology and magnetism. The interfacial topological Hall effect is closely related to the Dzyaloshinskii-Moriya interaction (DMI) at interface and topological spin textures. However, it is difficult to achieve a sizable THE in heterostructures due to the stringent constraints on the constituents of THE heterostructures such as strong spin-orbit coupling (SOC). Here we report the observation of a giant THE signal of 1.39 $\mu\Omega\cdot$cm in the van der Waals heterostructures of CrTe2/Bi2Te3 fabricated by molecular beam epitaxy, a prototype of two-dimensional (2D) ferromagnet (FM)/topological insulator (TI). This large magnitude of THE is attributed to an optimized combination of 2D ferromagnetism in CrTe2, strong SOC in Bi2Te3, and an atomically sharp interface. Our work reveals CrTe2/Bi2Te3 as a convenient platform for achieving large interfacial THE in hybrid systems, which could be utilized to develop quantum science and high-density information storage.

cond-mat.mes-hall↗

arXiv2020

Anomalous Hall and Nernst Effects in FeRh

Antiferromagnets with tunable phase transitions are promising for future spintronics applications. We investigated spin-dependent transport properties of FeRh thin films, which show a temperature driven antiferromagnetic-to-ferromagnetic phase transition. Epitaxial FeRh films grown on MgO (001) substrates exhibit a clear magnetic and electronic phase transition. By performing anomalous Hall and anomalous Nernst effect measurements over a wide range of temperatures, we demonstrate that the thermally driven transition shows distinctly different transverse transport on both side of the phase transition. Particularly, a sign change of both anomalous Hall and Nernst signals is observed.

cond-mat.mtrl-sci↗

arXiv2020

Voltage control of magnon spin currents in antiferromagnetic Cr2O3

Voltage-controlled spintronic devices utilizing the spin degree of freedom are desirable for future applications, and may allow energy-efficient information processing. Pure spin current can be created by thermal excitations in magnetic systems via the spin Seebeck effect (SSE). However, controlling such spin currents, only by electrical means, has been a fundamental challenge. Here, we investigate voltage control of the SSE in the antiferromagnetic insulator Cr2O3. We demonstrate that the SSE response generated in this material can be effectively controlled by applying a bias voltage, owing to the sensitivity of the SSE to the orientation of the magnetic sublattices as well as the existence of magnetoelectric couplings in Cr2O3. Our experimental results are explained using a model based on the magnetoelectric effect in Cr2O3.

cond-mat.mtrl-sci↗

arXiv2020

Large anomalous Nernst and inverse spin-Hall effects in epitaxial thin films of Kagome semimetal Mn$_3$Ge

Synthesis of crystallographically well-defined thin films of topological materials is important for unraveling their mesoscale quantum properties and for device applications. Mn$_3$Ge, an antiferromagnetic Weyl semimetal with a chiral magnetic structure on a Kagome lattice, is expected to have enhanced Berry curvature around Weyl nodes near the Fermi energy, leading to large anomalous Hall / Nernst effects and a large spin-Hall effect. Using magnetron sputtering, we have grown epitaxial thin films of hexagonal D0$_{19}$ Mn$_3$Ge that are flat and continuous. Large anomalous Nernst and inverse spin-Hall effects are observed in thermoelectric and spin-pumping devices. The anomalous Nernst signal in our Mn$_3$Ge films is estimated to be 0.1 $\mu$V / K, and is comparable to that in ferromagnetic Fe, despite Mn$_3$Ge having a weak magnetization of ~3.5 m$\mu_B$ at room temperature. The spin mixing conductance is 90.5 nm$^{-2}$ at the Py / Mn$_3$Ge interface, and the spin-Hall angle in Mn$_3$Ge is estimated to be about 8 times of that in Pt.

cond-mat.mtrl-sci↗

arXiv2020

Observation of an antiferromagnetic quantum critical point in high-purity LaNiO$_3$

Amongst the rare-earth perovskite nickelates, LaNiO$_3$ (LNO) is an exception. While the former have insulating and antiferromagnetic ground states, LNO remains metallic and non-magnetic down to the lowest temperatures. It is believed that LNO is a strange metal, on the verge of an antiferromagnetic instability. Our work suggests that LNO is a quantum critical metal, close to an antiferromagnetic quantum critical point (QCP). The QCP behavior in LNO is manifested in epitaxial thin films with unprecedented high purities. We find that the temperature and magnetic field dependences of the resistivity of LNO at low temperatures are consistent with scatterings of charge carriers from weak disorder and quantum fluctuations of an antiferromagnetic nature. Furthermore, we find that the introduction of a small concentration of magnetic impurities qualitatively changes the magnetotransport properties of LNO, resembling that found in some heavy-fermion Kondo lattice systems in the vicinity of an antiferromagnetic QCP.

cond-mat.str-el↗

arXiv2020

Molecular beam epitaxy of the magnetic kagome metal FeSn on LaAlO3 (111)

Materials with a layered Kagome lattice are expected to give rise to novel physics arising from band structures with topological properties, spin liquid behavior and the formation of skyrmions. Until now, most work on Kagome materials has been performed on bulk samples due to difficulties in thin film synthesis. Here, by using molecular beam epitaxy, layered Kagome-structured FeSn films are synthesized on (111) oriented LaAlO3 substrate. Both in-situ and ex-situ characterizations indicate these films are highly crystalline and c-axis oriented, with atomically smooth surfaces. However, the films grow as disconnected islands, with lateral dimensions on the micron scale. By patterning Pt electrodes using a focused electron beam, longitudinal and transverse resistance of single islands have been measured in magnetic fields. Our work opens a pathway for exploring mesoscale transport properties in thin films of Kagome materials and related devices.

cond-mat.mtrl-sci↗