arXiv subjects

Detlev Grützmacher

Publications and source records attributed to Detlev Grützmacher.

At least 19 recordsLinked to original sources

arXiv2026

Highly crystalline superconducting TiN resonators grown on thermally reconstructed sapphire

High quality crystalline growth of a thin film on sapphire requires sufficient substrate preparation, often achieved via the use of aggressive chemical cleaning. Direct thermal reconstruction of the sapphire substrate via a CO$_2$ laser beam may allow for an alternative way to prepare the substrate for epitaxy without the use of any chemical processing. Within this work, we demonstrate that thermal annealing of sapphire into its ($\sqrt{31}$$\times$$\sqrt{31}$)$R$$\pm$9° reconstruction is a valid alternative preparation technique for sapphire substrates. TiN films grown via plasma-assisted molecular beam epitaxy upon these substrates exhibit greater crystallinity than those grown on chemically cleaned sapphire substrates. Superconducting resonators fabricated from these films exhibit similar performance, with many possessing internal quality factors at single photon levels greater than 10$^6$ for both substrate preparation methods.

cond-mat.supr-con↗

arXiv2026

Polarization of photoluminescence by optically driven orbital reconstruction in magnetically ordered CrCl3

Control of magnetic order through optical manipulation of orbital states can be realized in a wide range of materials, including insulators. In the latter case, electrons are excited into different electronic states, whose character may be a complex result of spin-orbit-lattice coupling. Here, we use a combination of polarization-resolved photoluminescence spectroscopy and density functional theory calculations to study excited Cr3+ ions in bulk, insulating antiferromagnetic CrCl3. Our results demonstrate a temperature-dependent preferential polarization direction below ~17 K, which reorients in the presence of an applied in-plane magnetic field. Density functional theory calculations reveal a local distortion of the ligand field and the generation of out-of-plane spin and orbital moments, following Cr3+ ion excitation. These changes link the photoluminescence polarization to the magnetic state of CrCl3. Our findings provide insight into the excited-state electronic structure of Cr3+ ions and suggest that CrCl3 is a promising candidate for opto-orbitronic applications.

cond-mat.mtrl-sci↗

arXiv2026

Interplay between Aharonov-Bohm and Altshuler-Aronov-Spivak oscillations in phase-pure GaAs/InAs core/shell nanowires of different lengths

In GaAs/InAs core/shell nanowires, comprising a tubular conducting shell, interference phenomena observed under an axial field and originating from closed-loop states encircling the insulating core, provide an ideal platform for superconducting quantum devices that utilize effects such as Aharonov--Bohm or Altshuler--Aronov--Spivak-type conductance oscillations. Both effects are different in nature with respect to phase rigidity because of interference of non-time-reversed or time-reversed paths, respectively. Since their occurrence is largely governed by averaging effects, which depend on sample dimensions and the transport regime, we present a systematic study of flux-periodic oscillations of phase-pure zinc-blende GaAs/InAs core/shell nanowires as a function of gate voltage for samples with different contact separation lengths. Our analysis shows that with increasing contact separation length, averaging effects result in gradual reduction of $h/e$-periodic Aharonov--Bohm-type oscillations, while the $h/2e$-periodic Altshuler--Aronov--Spivak oscillations and its $h/4e$-periodic higher harmonics are enhanced. The additional phase rigidity seen in the $h/3e$-periodic oscillations is attributed to phase rigidity propagating from the neighbouring lower harmonics. Our tight-binding transport simulations on nanowires of different lengths which contain only a few scattering centers confirm the experimental observations regarding the different harmonics and their phase rigidity. Together, our experimental and simulation findings indicate quasi-ballistic transport with persistent Aharonov--Bohm-, and phase-rigid Altshuler--Aronov--Spivak-type oscillations despite few scattering centers.

cond-mat.mes-hall↗

arXiv2026

Proximitized Topological Insulator Charge Island Fabricated via In Situ Multi-Angle Stencil Lithography

Hybrid superconductor-topological insulator (TI) nanostructures constitute a promising materials platform for exploring proximity-induced superconductivity in systems with topologically protected surface states. A key obstacle has been the realization of clean and well-controlled superconductor-TI interfaces, as TI surfaces rapidly degrade under ambient conditions. Here, we introduce a fully in situ, multi-angle stencil lithography technique that enables the fabrication of proximitized charge islands in TIs. The approach combines selective-area growth of (Bi,Sb)$_2$Te$_3$ nanoribbons with angle-controlled deposition of diffusion barriers, superconducting Al, and ultrathin oxide tunnel barriers, allowing scalable fabrication of hybrid nanostructures without post-growth processing. Low-temperature transport measurements reveal robust Coulomb blockade and a pronounced suppression of low-energy conductance which vanishes with magnetic field, consistent with proximity-induced superconductivity in the island. These results establish a versatile nanofabrication platform that enables access to previously unexplored TI-based hybrid quantum devices and opens new routes for investigating superconductivity in topological nanostructures.

cond-mat.mes-hall↗

arXiv2026

Kinetics-Driven Selective Stoichiometric Shift and Structural Asymmetry in $Bi_4Te_3$ Nanostructures for Hybrid Quantum Architectures

Advances in hybrid quantum architectures hinge on topological materials that can be synthesized with precise stoichiometric and structural control at the nanoscale. While $Bi_4Te_3$ is a promising candidate due to its dual topological phases, acting as both a strong topological insulator and a topological crystalline insulator, high-quality growth remains challenging due to a narrow stoichiometric window and high sensitivity to surface kinetics. Here, we establish a reproducible molecular beam epitaxy (MBE) process to produce stoichiometric, twin-free $Bi_4Te_3$ thin films with ultra-smooth surfaces and atomically sharp van der Waals stacks. By employing selective area epitaxy (SAE), we realize laterally confined $Bi_4Te_3$ nanostructures that exhibit a feature-dependent stoichiometric deviation. This phenomenon, which we term the selective stoichiometric shift, arises from the unequal lateral diffusion of Bi and Te adatoms, revealing a direct coupling between adatom kinetics and nanoscale compositional stability. Atomic-resolution imaging further uncovers asymmetric van der Waals gaps within the stacking sequence, identifying an intrinsic structural asymmetry between the quintuple and bilayer units. These findings provide fundamental insights into the crystallization of Bi_4Te_3$ and demonstrate a scalable route for integrating functional topological materials into next-generation superconducting hybrid quantum circuits.

cond-mat.mes-hall↗

arXiv2025

Fabrication Optimization of Suspended Stencil Mask Lithography for Multi-Terminal Josephson Junctions

Stencil mask lithography is an advanced technique for fully in-situ fabricating Josephson junctions, which is increasingly being used for multi-terminal Josephson junctions. This study provides information on the optimal mask design and mask reliability. For this, 270 mask designs were systematically fabricated and investigated under scanning electron microscope. Reliable statements are made about mask yield, minimal dimensions, and systematic dependencies on the number of superconducting terminals. We find that stencil mask lithography can be used reliably for fabricating multi-terminal Josephson junctions, enabling lateral mask dimensions down to 40$\,$nm on average.

physics.app-ph↗

arXiv2025

On-chip stencil lithography for superconducting qubits

Improvements in circuit design and more recently in materials and surface cleaning have contributed to a rapid development of coherent superconducting qubits. However, organic resists commonly used for shadow evaporation of Josephson junctions (JJs) pose limitations due to residual contamination, poor thermal stability and compatibility under typical surface-cleaning conditions. To provide an alternative, we developed an inorganic SiO$_2$/Si$_3$N$_4$ on-chip stencil lithography mask for JJ fabrication. The stencil mask is resilient to aggressive cleaning agents and it withstands high temperatures up to 1200°C, thereby opening new avenues for JJ material exploration and interface optimization. To validate the concept, we performed shadow evaporation of Al-based transmon qubits followed by stencil mask lift-off using vapor hydrofluoric acid, which selectively etches SiO$_2$. We demonstrate average $T_1 \approx 75 \pm 11 μ$s over a 200 MHz frequency range in multiple cool-downs for one device, and $T_1 \approx 44\pm 8 μ$s for a second device. These results confirm the compatibility of stencil lithography with state-of-the-art superconducting quantum devices and motivate further investigations into materials engineering, film deposition and surface cleaning techniques.

quant-ph↗

arXiv2025

Controlling the magneto-transport properties of magnetic topological insulator thin films from Cr$_x$(Bi$_y\,$Sb$_{1-y}$)$_{2-x}$Te$_3$ via molecular beam epitaxy

In this work we present a systematic in-depth study of how we can alter the magneto-transport properties of magnetic topological insulator thin films by tuning the parameters of the molecular beam epitaxy. First, we show how a varying substrate temperature changes the surface morphology and when chosen properly leads to a high crystal quality. Next, the effect of the chromium concentration on the film roughness and crystal quality is investigated. Finally, both the substrate temperature and the chromium concentration are investigated with respect to their effect on the magneto-transport properties of the magnetic topological insulator thin films. It becomes apparent that the substrate temperature and the chromium concentration can be used to tune the Fermi level of the film which allows to make the material intrinsically charge neutral. A very low chromium concentration furthermore allows to tune the magnetic topological insulator into a regime where strong superconducting correlations can be expected when combining the material with a superconductor.

cond-mat.mes-hall↗

arXiv2025

Frustrated Frustration of Arrays with Four-Terminal Nb-Pt-Nb Josephson Junctions

We study the frustration pattern of a square lattice with in-situ fabricated Nb-Pt-Nb four-terminal Josephson junctions. The four-terminal geometry gives rise to a checker board pattern of alternating fluxes f, f' piercing the plaquettes, which stabilizes the Berezinskii-Kosterlitz-Thouless transition even at irrational flux quanta per plaquette, due to an unequal repartition of integer flux sum f+f' into alternating plaquettes. This type of frustrated frustration manifests as a beating pattern of the dc resistance, with state configurations at the resistance dips gradually changing between the conventional zero-flux and half-flux states. Hence, the four-terminal Josephson junction array offers a promising platform to study previously unexplored flux and vortex configurations, and provides an estimate on the spatial expansion of the four-terminal Josephson junction central weak link area.

cond-mat.supr-con↗

arXiv2025

Optimizing proximitized magnetic topological insulator nanoribbons for Majorana bound states

Heterostructures comprised of a magnetic topological insulator (MTI) placed in the proximity of an $s$-wave superconductor have emerged as a platform for the practical realization of Majorana bound states (MBSs). More specifically, it has been theoretically predicted that MBS can appear in proximitized MTI nanoribbons (PNRs) in the quantum anomalous Hall regime. As with all MBS platforms, disorder and device imperfections can be detrimental to the formation of robust and well-separated MBSs that are suitable for fusion and braiding experiments. Here, we identify the optimal conditions for obtaining a topological superconducting gap that is robust against disorder, with spatially separated stable MBSs in PNRs, and introduce a figure of merit that encompasses these conditions. Particular attention is given to the thin-film limit of magnetic topological insulators (MTIs), where the hybridization of the surface states cannot be neglected, and to the role of electron-hole asymmetry in the low-energy physics of the system. Based on our numerical results, we find that (1) MTI thin films that are normal (rather than quantum spin Hall) insulators for zero magnetization are favorable, (2) strong electron-hole asymmetry causes the stability and robustness of MBS to be very different for chemical potentials above or below the Dirac point, and (3) the magnetization strength should preferably be comparable to the hybridization or confinement energy of the surface states, whichever is largest.

cond-mat.mes-hall↗

arXiv2025

Aharonov-Bohm and Altshuler-Aronov-Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires

The realization of various qubit systems based on high-quality hybrid superconducting quantum devices, is often achieved using semiconductor nanowires. For such hybrid devices, a good coupling between the superconductor and the conducting states in the semiconductor wire is crucial. GaAs/InAs core/shell nanowires with an insulating core, and a conductive InAs shell fulfill this requirement, since the electronic states are strongly confined near the surface. However, maintaining a good crystal quality in the conducting shell is a challenge for this type of nanowire. In this work, we present phase-pure zincblende GaAs/InAs core/shell nanowires and analyze their low-temperature magnetotransport properties. We observe pronounced magnetic flux quantum periodic oscillations, which can be attributed to a combination of Aharonov-Bohm and Altshuler-Aronov-Spivak oscillations. From the gate and temperature dependence of the conductance oscillations, as well as from supporting theoretical transport calculations, we conclude that the conducting states in the shell are in the quasi-ballistic transport regime, with few scattering centers, but nevertheless leading to an Altshuler-Aronov-Spivak correction that dominates at small magnetic field strengths. Our results demonstrate that phase-pure zincblende GaAs/InAs core/shell nanowires represent a very promising alternative semiconductor nanowire-based platform for hybrid quantum devices.

cond-mat.mes-hall↗

arXiv2025

Superconducting Diode Effect in Selectively-Grown Topological Insulator based Josephson Junctions

The Josephson diode effect, where the critical current magnitude depends on its direction, arises when both time-reversal and inversion symmetries are broken - often achieved by a combination of spin-orbit interaction and applied magnetic fields. Taking advantage of the strong spin-orbit coupling inherent in three-dimensional topological insulators, we study this phenomenon in Nb/Bi$_{0.8}$Sb$_{1.2}$Te$_3$/Nb Josephson weak-link junctions. Under an in-plane magnetic field perpendicular to the current direction, we observe a pronounced Josephson diode effect with efficiencies up to 7%. A crucial component of this behavior is the non-sinusoidal current-phase relationship and an anomalous phase shift, which we attribute to the presence of a ballistic supercurrent component due to the surface states. These findings open up new avenues for harnessing and controlling the Josephson diode effect in topological material systems.

cond-mat.mes-hall↗

arXiv2024

Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates

Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As an alternative, we fabricated flat buried bottom gate structures by filling etched trenches in a Si substrate with sputtered TiN, followed by mechanical polishing. This method achieved gate line pitches as small as 60 nm. The gate fingers have low gate leakage. As a proof of principle, we fabricated quantum dot devices using InAs nanowires placed on the gate fingers. These devices exhibit single electron tunneling and Coulomb blockade.

cond-mat.mes-hall↗

arXiv2024

Observation of Josephson Harmonics in Tunnel Junctions

Approaches to developing large-scale superconducting quantum processors must cope with the numerous microscopic degrees of freedom that are ubiquitous in solid-state devices. State-of-the-art superconducting qubits employ aluminum oxide (AlO$_x$) tunnel Josephson junctions as the sources of nonlinearity necessary to perform quantum operations. Analyses of these junctions typically assume an idealized, purely sinusoidal current-phase relation. However, this relation is only expected to hold in the limit of vanishingly low-transparency channels in the AlO$_x$ barrier. Here we show that the standard current-phase relation fails to accurately describe the energy spectra of transmon artificial atoms across various samples and laboratories. Instead, a mesoscopic model of tunneling through an inhomogeneous AlO$_x$ barrier predicts percent-level contributions from higher Josephson harmonics. By including these in the transmon Hamiltonian, we obtain orders of magnitude better agreement between the computed and measured energy spectra. The presence and impact of Josephson harmonics has important implications for developing AlO$_x$-based quantum technologies including quantum computers and parametric amplifiers. As an example, we show that engineered Josephson harmonics can reduce the charge dispersion and the associated errors in transmon qubits by an order of magnitude, while preserving their anharmonicity.

quant-ph↗

arXiv2024

Superconductive coupling and Josephson diode effect in selectively-grown topological insulator based three-terminal junctions

The combination of an ordinary s-type superconductor with three-dimensional topological insulators creates a promising platform for fault-tolerant topological quantum computing circuits based on Majorana braiding. The backbone of the braiding mechanism are three-terminal Josephson junctions. It is crucial to understand the transport in these devices for further use in quantum computing applications. We present low-temperature measurements of topological insulator-based three-terminal Josephson junctions fabricated by a combination of selective-area growth of $\mathrm{Bi_{0.8}Sb_{1.2}Te_3}$ and shadow mask evaporation of Nb. This approach allows for the in-situ fabrication of Josephson junctions with an exceptional interface quality, important for the study of the proximity-effect. We map out the transport properties of the device as a function of bias currents and prove the coupling of the junctions by the observation of a multi-terminal geometry induced diode effect. We find good agreement of our findings with a resistively and capacitively shunted junction network model.

cond-mat.mes-hall↗

arXiv2024

In-plane magnetic field driven conductance modulations in topological insulator kinks

We present low-temperature magnetoconductance measurements on Bi$_{1.5}$Sb$_{0.5}$Te$_{1.8}$Se$_{1.2}$ kinks with ribbon-shaped legs. The conductance displays a clear dependence on the in-plane magnetic field orientation. The conductance modulation is consistent with orbital effect-driven trapping of the topological surface states on different side facets of the legs of the kink, which affects their transmission across the kink. This magnetic field-driven trapping and conductance pattern can be explained with a semiclassical picture and is supported by quantum transport simulations. The interpretation is corroborated by varying the angle of the kink and analyzing the temperature dependence of the observed magnetoconductance pattern, indicating the importance of phase coherence along the cross section perimeter of the kink legs.

cond-mat.mes-hall↗

arXiv2024

Low-energy modeling of three-dimensional topological insulator nanostructures

We develop an accurate nanoelectronic modeling approach for realistic three-dimensional topological insulator nanostructures and investigate their low-energy surface-state spectrum. Starting from the commonly considered four-band $\boldsymbol{\mathrm{k\cdot p}}$ bulk model Hamiltonian for the Bi$_2$Se$_3$ family of topological insulators, we derive new parameter sets for Bi$_2$Se$_3$, Bi$_2$Te$_3$ and Sb$_2$Te$_3$. We consider a fitting strategy applied to \emph{ab initio} band structures around the $Γ$ point that ensures a quantitatively accurate description of the low-energy bulk and surface states, while avoiding the appearance of unphysical low-energy states at higher momenta, something that is not guaranteed by the commonly considered perturbative approach. We analyze the effects that arise in the low-energy spectrum of topological surface states due to band anisotropy and electron-hole asymmetry, yielding Dirac surface states that naturally localize on different side facets. In the thin-film limit, when surface states hybridize through the bulk, we resort to a thin-film model and derive thickness-dependent model parameters from \emph{ab initio} calculations that show good agreement with experimentally resolved band structures, unlike the bulk model that neglects relevant many-body effects in this regime. Our versatile modeling approach offers a reliable starting point for accurate simulations of realistic topological material-based nanoelectronic devices.

cond-mat.mes-hall↗

arXiv2024

Topological insulator based axial superconducting quantum interferometer structures

Nanoscale superconducting quantum interference devices (SQUIDs) are fabricated in-situ from a single Bi$_{0.26}$Sb$_{1.74}$Te$_{3}$ nanoribbon that is defined using selective-area growth and contacted with superconducting Nb electrodes via a shadow mask technique. We present $h/(2e)$ magnetic flux periodic interference in both, fully and non-fully proximitized nanoribbons. The pronounced oscillations are explained by interference effects of coherent transport through topological surface states surrounding the cross-section of the nanoribbon.

cond-mat.mes-hall↗