arXiv subjects

Deyang Chen

Publications and source records attributed to Deyang Chen.

18 recordsLinked to original sources

arXiv2025

Reversibly Strain Engineering and Electric-Field Control of Crystal Symmetry in Multiferroic Oxides

Multiferroic oxides, such as BiFeO3, have garnered significant attention due to their coupled ferroelectric, magnetic, and elastic properties, offering exciting opportunities for multifunctional device applications. Controlling phase transitions in these materials is critical for tuning their physical properties and achieving desired functionalities. While numerous studies have focused on ferroelectric-ferroelectric transitions at rhombohedral-tetragonal morphotropic phase boundaries, far less attention has been given to the ferroelectric-antiferroelectric phase boundaries. Such systems hold promise for discovering novel physical phenomena, such as reversible phase transitions, enhanced piezoelectricity, and magnetoelectric coupling. In this work, we report a reversible antiferroelectric-to-ferroelectric phase transition in La doped BiFeO3 thin films. By modulating the residual strain via film thickness, an antiferroelectric orthorhombic phase is stabilized within a ferroelectric rhombohedral phase matrix. Under an external electric field, the phase transitions reversibly between these two states. This discovery not only enriches the understanding of orthorhombic-rhombohedral morphotropic phase boundaries but also provides a potential pathway for developing magnetoelectric devices with enhanced functionality.

cond-mat.mtrl-sci↗

arXiv2022

Tripling energy storage density through order-disorder transition induced polar nanoregions in PbZrO3 thin films by ion implantation

Dielectric capacitors are widely used in pulsed power electronic devices due to their ultrahigh power densities and extremely fast charge/discharge speed. To achieve enhanced energy storage density, both maximum polarization (Pmax) and breakdown strength (Eb) need to be improved simultaneously. However, these two key parameters are inversely correlated. In this study, order-disorder transition induced polar nanoregions (PNRs) have been achieved in PbZrO3 thin films by making use of the low-energy ion implantation, enabling us overcome the trade-off between high polarizability and breakdown strength, which leads to the tripling of the energy storage density from 20.5 J/cm3 to 62.3 J/cm3 as well as the great enhancement of breakdown strength. This approach could be extended to other dielectric oxides to improve the energy storage performance, providing a new pathway for tailoring the oxide functionalities.

cond-mat.mtrl-sci↗

arXiv2022

Deterministic manipulation of multi-state polarization switching in multiferroic thin films

Deterministically controllable multi-state polarizations in ferroelectric materials are promising for the application of next-generation non-volatile multi-state memory devices. However, the achievement of multi-state polarizations has been inhibited by the challenge of selective control of switching pathways. Here we report an approach to selectively control 71{\deg} ferroelastic and 180{\deg} ferroelectric switching paths by combining the out-of-plane electric field and in-plane trailing field in multiferroic BiFeO3 thin films with periodically ordered 71{\deg} domain wall. Four-state polarization states can be deterministically achieved and reversibly controlled through precisely selecting different switching paths. Our studies reveal the ability to obtain multiple polarization states for the realization of multi-state memories and magnetoelectric coupling based devices.

cond-mat.mtrl-sci↗

arXiv2021

Topologically Protected Ferroelectric Domain Wall Memory with Large Readout Current

The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of prospective electronic devices, and the so-called walltronics is emerging consequently. Here we demonstrate the highly stable and fatigue-resistant nonvolatile ferroelectric memory device based on deterministic creation and erasure of conductive domain wall geometrically confined inside a topological domain structure. By introducing a pair of delicately designed co-axial electrodes onto the epitaxial BiFeO3 film, one can easily create quadrant center topological polar domain structure. More importantly, a reversible switching of such center topological domain structure between the convergent state with highly conductive confined wall and the divergent state with insulating confined wall can be realized, hence resulting in an apparent resistance change with a large On/Off ratio > 104 and a technically preferred readout current (up to 40 nA). Owing to the topological robustness of the center domain structure, the device exhibits the excellent restoration repeatability over 106 cycles and a long retention over 12 days (> 106 s). This work demonstrates a good example for implementing the exotic polar topologies in high-performance nanoscale devices, and would spur more interest in exploring the rich emerging applications of these exotic topological states.

physics.app-ph↗

arXiv2021

Nanoscale Non-Destructive Ferroelectric Characterization with Non-Contact Heterodyne Electrostrain Force Microscopy

Perceiving nanoscale ferroelectric phenomena from real space is of great importance for elucidating underlying ferroelectric physics. During the past decades, nanoscale ferroelectric characterization has mainly relied on the Piezoresponse Force Microscopy (PFM), however, the fundamental limitations of PFM have made the nanoscale ferroelectric studies encounter significant bottlenecks. In this study, a high-resolution non-contact ferroelectric measurement, named Non-Contact Heterodyne Electrostrain Force Microscopy (NC-HEsFM), has been introduced firstly. It has been unambiguously demonstrated that NC-HEsFM can operate on multiple eigenmodes to perform ideal high-resolution ferroelectric domain mapping, standard ferroelectric hysteresis loop measurement and controllable domain manipulation. With using quartz tuning fork (QTF) sensor and heterodyne detection, NC-HEsFM shows an unprecedented capability in achieving real non-contact yet non-destructive ferroelectric characterization with negligible electrostatic force effect. It is believed that NC-HEsFM can be extensively used in various ferroelectric or piezoelectric studies with providing substantially improved characterization performance. Meanwhile, the QTF-based force detection makes NC-HEsFM highly compatible for high-vacuum and low-temperature environments, providing ideal conditions for achieving an ultra-high spatial resolution to investigate the most intrinsic ferroelectric phenomena.

cond-mat.mtrl-sci↗

arXiv2020

Enhanced Stability of Antiferromagnetic Skyrmion during Its Motion by Anisotropic Dzyaloshinskii Moriya Interaction

Searching for new methods to enhance the stability of antiferromagnetic (AFM) skyrmion during its motion is an important issue for AFM spintronic devices. Herein, the spin polarized current-induced dynamics of a distorted AFM skyrmion is numerically studied, based on the Landau Lifshitz Gilbert simulations of the model with an anisotropic Dzyaloshinskii Moriya (DM) interaction. It is demonstrated that the DM interaction anisotropy induces the skyrmion deformation, which suppresses the distortion during the motion and enhances the stability of the skyrmion. Moreover, the effect of the DM interaction anisotropy on the skyrmion velocity is investigated in detail, and the simulated results are further explained by Thiele theory. This work unveils a promising strategy to enhance the stability and the maximum velocity of AFM skyrmion, benefiting future spintronic applications.

physics.app-ph↗

arXiv2020

Quasi-one-dimensional metallic conduction channels in exotic ferroelectric topological defects

Ferroelectric topological objects (e.g. vortices, skyrmions) provide a fertile ground for exploring emerging physical properties that could potentially be utilized in future configurable nanoelectronic devices. Here, we demonstrate quasi-one-dimensional metallic high conduction channels along two types of exotic topological defects, i.e. the topological cores of (i) a quadrant vortex domain structure and (ii) a center domain (monopole-like) structure confined in high quality BiFeO3 nanoisland array, abbreviated as the vortex core and the center core. We unveil via phase-field simulations that the superfine (< 3 nm) metallic conduction channels along center cores arise from the screening charge carriers confined at the core whereas the high conductance of vortex cores results from a field-induced twisted state. These conducting channels can be repeatedly and reversibly created and deleted by manipulating the two topological states via an electric field, leading to an apparent electroresistance effect with an on/off ratio higher than 103. These results open up the possibility of utilizing these functional one-dimensional topological objects in high-density nanoelectronic devices such as ultrahigh density nonvolatile memory.

cond-mat.mtrl-sci↗

arXiv2020

Topological Hall effect in single thick SrRuO3 layers induced by defect engineering

The topological Hall effect (THE) has been discovered in ultrathin SrRuO3 (SRO) films, where the interface between the SRO layer and another oxide layer breaks the inversion symmetry resulting in the appearance of THE. Thus, THE only occurs in ultra-thin SRO films of several unit cells. In addition to employing a heterostructure, the inversion symmetry can be broken intrinsically in bulk SRO by introducing defects. In this study THE is observed in 60 nm thick SRO films, in which defects and lattice distortions are introduced by helium ion irradiation. The irradiated SRO films exhibit a pronounced THE in a wide temperature range from 5 K to 80 K. These observations can be attributed to the emergence of Dzyaloshinskii-Moriya interaction as a result of artificial inversion symmetry breaking associated to the lattice defect engineering. The creation and control of the THE in oxide single layers can be realized by ex situ film processing. Therefore, this work provides new insights into the THE and illustrates a promising strategy to design novel spintronics devices.

cond-mat.mtrl-sci↗

arXiv2019

Melting of Spatially Modulated Phases in La-doped BiFeO3 at Surfaces and Surface-Domain Wall Junctions

The interplay between the surface and domain wall phenomena in multiferroic LaxBi1-xFeO3 in the vicinity of morphotropic phase transition is explored on the atomic level. Scanning Transmission Electron Microscopy (STEM) has enabled mapping of atomic structures of the material with picometer-level precision, providing direct insight into the spatial distribution of the order parameters in this material and their behavior at surfaces and interfaces. Here, we use the thermodynamic Landau-Ginzburg-Devonshire (LGD) approach to explain the emergence of spatially modulated phases (SMP) in La0.22Bi0.78FeO3 films, and establish that the change of polarization gradient coefficients caused by La-doping is the primary driving mechanisms. The suppression, or "melting", of the SMP in the vicinity of the domain wall surface junction is observed experimentally and simulated in the framework of LGD theory. The melting originated from the system tendency to minimize electrostatic energy caused by long-range stray electric fields outside the film and related depolarization effects inside it. The observed behavior provides insight to the origin of surface and interface behaviors in multiferroics.

cond-mat.mtrl-sci↗

arXiv2019

Building Free Energy Functional from Atomically-Resolved Imaging: Atomic Scale Phenomena in La-doped BiFeO3

Scanning Transmission Electron Microscopy (STEM) has enabled mapping of atomic structures of solids with sub-pm precision, providing insight to the physics of ferroic phenomena and chemical expansion. However, only a subset of information is available, due to projective nature of imaging in the beam direction. Correspondingly, the analysis often relies on the postulated known form of macroscopic Landau-Ginzburg energy, and some predefined relationship between experimentally determined atomic coordinates and the order parameter field. Here, we propose an approach for exploring the structure of ferroics using reduced order parameter models constructed based on experimental data only. We develop a four sublattices model (FSM) for the analytical description of A-cation displacement in (anti)ferroelectric-antiferrodistortive perovskites of ABO3-type. The model describes the displacements of cation A in four neighboring unit cells and determines the conditions of different structural phases appearance and stability in ABO3. We show that FSM explains the coexistence of rhombohedral (R), orthorhombic (O) and spatially modulated (SM) phases, observed by atomic-resolution STEM in La-doped BiFeO3. Using this approach, we atomically resolve and theoretically model the sublattice asymmetry inherent to the case of the A-site La/Bi cation sublattice in LaxBi1-xFeO3 polymorphs. This approach allows exploring the ferroics behaviors from experimental data only, without additional assumptions on the nature of the order parameter.

cond-mat.mtrl-sci↗

arXiv2019

Strain engineering of epitaxial oxide heterostructures beyond substrate limitations

The limitation of commercially available single-crystal substrates and the lack of continuous strain tunability preclude the ability to take full advantage of strain engineering for further exploring novel properties and exhaustively studying fundamental physics in complex oxides. Here we report an approach for imposing continuously tunable, large epitaxial strain in oxide heterostructures beyond substrate limitations by inserting an interface layer through tailoring its gradual strain relaxation. Taking BiFeO3 as a model system, we demonstrate that the introduction of an ultrathin interface layer allows the creation of a desired strain that can induce phase transition and stabilize a new metastable super-tetragonal phase as well as morphotropic phase boundaries overcoming substrate limitations. Furthermore, continuously tunable strain from tension to compression can be generated by precisely adjusting the thickness of the interface layer, leading to the first achievement of continuous O-R-T phase transition in BiFeO3 on a single substrate. This proposed route could be extended to other oxide heterostructures, providing a platform for creating exotic phases and emergent phenomena.

cond-mat.mtrl-sci↗

arXiv2019

Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain

Understanding of the metal-insulator transition (MIT) in correlated transition-metal oxides is a fascinating topic in condensed matter physics and a precise control of such transitions plays a key role in developing novel electronic devices. Here we report an effective tuning of the MIT in epitaxial SrVO3 (SVO) films by expanding the out-of-plane lattice constant without changing in-plane lattice parameters, through helium ion irradiation. Upon increase of the ion fluence, we observe a MIT with a crossover from metallic to insulating state in SVO films. A combination of transport and magnetoresistance measurements in SVO at low temperatures reveals that the observed MIT is mainly ascribed to electron-electron interactions rather than disorder-induced localization. Moreover, these results are well supported by the combination of density functional theory and dynamical mean field theory (DFT+DMFT) calculations, further confirming the decrease of the bandwidth and the enhanced electron-electron interactions resulting from the expansion of out-of-plane lattice constant. These findings provide new insights into the understanding of MIT in correlated oxides and perspectives for the design of unexpected functional devices based on strongly correlated electrons.

cond-mat.mtrl-sci↗

arXiv2019

Solution Processed Large-scale Multiferroic Complex Oxide Epitaxy with Magnetically Switched Polarization

Complex oxides with tunable structures have many fascinating properties, though high-quality complex oxide epitaxy with precisely controlled composition is still out of reach. Here we have successfully developed solution-based single crystalline epitaxy for multiferroic (1-x)BiTi(1-y)/2FeyMg(1-y)/2O3-(x)CaTiO3 (BTFM-CTO) solid solution in large area, confirming its ferroelectricity at atomic-scale with a spontaneous polarization of 79~89uC/cm2. Careful compositional tuning leads to a bulk magnetization of ~0.07uB/Fe at room temperature, enabling magnetically induced polarization switching exhibiting a large magnetoelectric coefficient of 2.7-3.0X10-7s/m. This work demonstrates the great potential of solution processing in large-scale complex oxide epitaxy and establishes novel room-temperature magnetoelectric coupling in epitaxial BTFM-CTO film, making it possible to explore a much wider space of composition, phase, and structure that can be easily scaled up for industrial applications.

cond-mat.mtrl-sci↗

arXiv2019

Controllable Defect Driven Symmetry Change and Domain Structure Evolution in BiFeO3 with Enhanced Tetragonality

Defect engineering has been a powerful tool to enable the creation of exotic phases and the discovery of intriguing phenomena in ferroelectric oxides. However, accurate control the concentration of defects remains a big challenge. In this work, ion implantation, that can provide controllable point defects, allows us the ability to produce a controlled defect-driven true super-tetragonal (T) phase with enhanced tetragonality in ferroelectric BiFeO3 thin films. This point defect engineering is found to drive the phase transition from the as-grown mixed rhombohedral-like (R) and tetragonal-like (MC) phase to true tetragonal (T) symmetry. By further increasing the injected dose of He ion, we demonstrate an enhanced tetragonality super-tetragonal (super-T) phase with the largest c/a ratio (~ 1.3) that has ever been experimentally achieved in BiFeO3. A combination of morphology change and domain evolution further confirm that the mixed R/MC phase structure transforms to the single-domain-state true tetragonal phase. Moreover, the re-emergence of R phase and in-plane stripe nanodomains after heat treatment reveal the memory effect and reversible phase transition. Our findings demonstrate the control of R-Mc-T-super T symmetry changes and the creation of true T phase BiFeO3 with enhanced tetragonality through controllable defect engineering. This work also provides a pathway to generate large tetragonality (or c/a ratio) that could be extended to other ferroelectric material systems (such as PbTiO3, BaTiO3 and HfO2) which may lead to strong polarization enhancement.

cond-mat.mtrl-sci↗

arXiv2018

Manipulation of Conductive Domain Walls in Confined Ferroelectric Nano-islands

Conductive ferroelectric domain walls--ultra-narrow and configurable conduction paths, have been considered as essential building blocks for future programmable domain wall electronics. For applications in high density devices, it is imperative to explore the conductive domain walls in small confined systems while earlier investigations have hitherto focused on thin films or bulk single crystals, noting that the size-confined effects will certainly modulate seriously the domain structure and wall transport. Here, we demonstrate an observation and manipulation of conductive domain walls confined within small BiFeO3 nano-islands aligned in high density arrays. Using conductive atomic force microscopy (CAFM), we are able to distinctly visualize various types of conductive domain walls, including the head-to-head charged walls (CDWs), zigzag walls (zigzag-DWs), and typical 71° head-to-tail neutral walls (NDWs). The CDWs exhibit remarkably enhanced metallic conductivity with current of ~ nA order in magnitude and 104 times larger than that inside domains (0.01 ~ 0.1 pA), while the semiconducting NDWs allow also much smaller current ~ 10 pA than the CDWs. The substantially difference in conductivity for dissimilar walls enables additional manipulations of various wall conduction states for individual addressable nano-islands via electrically tuning of their domain structures. A controllable writing of four distinctive states by applying various scanning bias voltages is achieved, offering opportunities for developing multilevel high density memories.

cond-mat.mes-hall↗

arXiv2018

Defect-induced exchange bias in a single SrRuO3 layer

Exchange bias stems from the interaction between different magnetic phases and therefore it generally occurs in magnetic multilayers. Here we present a large exchange bias in a single SrRuO3 layer induced by helium ion irradiation. When the fluence increases, the induced defects not only suppress the magnetization and the Curie temperature, but also drive a metal-insulator transition at a low temperature. In particular, a large exchange bias field up to around 0.36 T can be created by the irradiation. This large exchange bias is related to the coexistence of different magnetic and structural phases that are introduced by embedded defects. Our work demonstrates that spintronic properties in complex oxides can be created and enhanced by applying ion irradiation.

cond-mat.mtrl-sci↗

arXiv2017

High density array of epitaxial BiFeO3 nanodots with robust and reversibly switchable topological domain states

The exotic topological domains in ferroelectrics and multiferroics have attracted extensive interest in recent years due to their novel functionalities and potential applications in nanoelectronic devices. One of the key challenges for such applications is a realization of robust yet reversibly switchable nanoscale topological domain states with high density, wherein spontaneous topological structures can be individually addressed and controlled. This has been accomplished in our work using high density arrays of epitaxial BiFeO3 (BFO) nanodots with lateral size as small as ~60 nm. We demonstrate various types of spontaneous topological domain structures, including center-convergent domains, center-divergent domains, and double-center domains, which are stable over sufficiently long time yet can be manipulated and reversibly switched by electric field. The formation mechanisms of these topological domain states, assisted by the accumulation of compensating charges on the surface, have also been revealed. These result demonstrated that these reversibly switchable topological domain arrays are promising for applications in high density nanoferroelectric devices such as nonvolatile memories

cond-mat.mtrl-sci↗

arXiv2015

180 degree Ferroelectric Stripe Nanodomains in BiFeO3 Thin Films

There is growing evidence that domain walls in ferroics can possess emergent properties that are absent in bulk materials. For example, 180 domain walls in the ferroelectric-antiferromagnetic BiFeO3 are particularly interesting because they have been predicted to possess a range of intriguing behaviors; including electronic conduction and enhanced magnetization. To date, however, ordered arrays of such domain structures have not been reported. Here, we report the observation of 180 stripe nanodomains in (110)-oriented BiFeO3 thin films grown on orthorhombic GdScO3 (010)O substrates, and their impact on exchange coupling to metallic ferromagnets. Nanoscale ferroelectric 180 stripe domains with {112 } domain walls were observed in films < 32 nm thick to compensate for large depolarization fields. With increasing film thickness, we observe a domain structure crossover from the depolarization field-driven 180 stripe nanodomains to 71 domains determined by the elastic energy. Interestingly, these 180 domain walls (which are typically cylindrical or meandering in nature due to a lack of strong anisotropy associated with the energy of such walls) are found to be highly-ordered. Additional studies of Co0.9Fe0.1/BiFeO3 heterostructures reveal exchange bias and exchange enhancement in heterostructures based-on BiFeO3 with 180 domain walls and an absence of exchange bias in heterostructures based-on BiFeO3 with 71 domain walls; suggesting that the 180 domain walls could be the possible source for pinned uncompensated spins that give rise to exchange bias. This is further confirmed by X-ray circular magnetic dichroism studies, which demonstrate that films with predominantly 180 domain walls have larger magnetization than those with primarily 71 domain walls. Our results could be useful to extract the structure of domain walls and to explore domain wall functionalities in BiFeO3.

cond-mat.mtrl-sci↗