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Dhurba R. Jaishi

Publications and source records attributed to Dhurba R. Jaishi.

3 recordsLinked to original sources

Defect-induced optical magnons and local magnetic correlations in MnSb2Te4

Magnetic defect engineering offers a route to manipulate and control magnetic and electronic states in quantum materials. In the Mn(Bi,Sb)2Te4 family of topological magnetic insulators, Sb substitution facilitates site mixing between Mn and Sb atoms that affects magnetic order and band topology. Here we directly probe these defect-induced magnetic interactions using inelastic neutron scattering on single crystals of MnSb2Te4. We find that antisite mixing generates inequivalent and disordered magnetic sublattices where strong defect-induced antiferromagnetic coupling produces an optical magnon with a large gap. Semi-classical spin-dynamics simulations accurately capture magnetic excitations in the ordered and paramagnetic states and identify that linear Mn-Te-Mn bonds mediate coupling to antisite magnetic defects.

cond-mat.str-el↗

Chiral Magnon Mixing by Symmetry-Breaking in Collinear Ferrimagnets

Magnons in ferromagnets possess spin angular momentum defined by right-handed precession of the moment around the magnetization direction. In antiferromagnets with no net magnetization, left-and right-handed magnons are degenerate in the absence of an applied field. Ferrimagnets possess uncompensated magnetic sublattices, which should natively possess right-and left-handed magnons where their energy is split by the internal molecular field. Here, we show that RMn6Sn6 (R = Tb, Er) ferrimagnets possess right and left-handed magnon bands that cross at finite momentum (k) within the basal plane, defining modes with opposite dynamical chirality. Depending on the symmetry of the ferrimagnetic order, which may be manipulated by varying the rare-earth magnetic anisotropy or with applied field, the band crossing may remain a nodal line or may be gapped. The gapped modes contain hybridized chiral excitations whose chirality becomes k-dependent.

cond-mat.str-el↗

Electronic Structure and Thermoelectric Properties of Half-Heusler Alloys NiTZ

We have investigated the electronic and thermoelectric properties of half-Heusler alloys NiTZ (T = Sc, and Ti; Z = P, As, Sn, and Sb) having 18 valence electron. Calculations are performed by means of density functional theory and Boltzmann transport equation with constant relaxation time approximation, validated by NiTiSn. The chosen half-Heuslers are found to be an indirect band gap semiconductor, and the lattice thermal conductivity is comparable with the state-of-the-art thermoelectric materials. The estimated power factor for NiScP, NiScAs, and NiScSb reveals that their thermoelectric performance can be enhanced by appropriate doping rate. The value of ZT found for NiScP, NiScAs, and NiScSb are 0.46, 0.35, and 0.29, respectively at 1200 K.

cond-mat.mtrl-sci↗