arXiv subjects

Di Wu

Publications and source records attributed to Di Wu.

At least 685 records · Page 38Linked to original sources

arXiv2016

New forms and thermodynamics of the neutral rotating squashed black hole in five-dimensional vacuum Einstein gravity theory

We initiated the program to look for new and simple forms for the five-dimensional rotating squashed black holes by solving directly the equation of motion. In a recent paper, the metric ansatz of dimensional reduction along the fifth spatial dimension was used to obtain a new but rather simple form for the five-dimensional rotating uncharged black hole solution with squashed horizons via solving the vacuum Einstein field equations. In this work, we continue to seek for another new but relatively simple form for the neutral rotating squashed black hole solution by using a different metric ansatz of time-like dimensional reduction. We then find its relation to our previous solution and investigate its thermodynamics by means of the counterterm method. Compared with the previous results given by the other author, both of our new metric forms and their associated thermodynamic expressions are very concise and elegant. Both of two new forms for the neutral rotating squashed black hole solution presented in this paper can be used as the seed to generate its charged generalization in D=5 minimal supergravity.

hep-th↗

arXiv2016

Impact of Grain Boundaries on Efficiency and Stability of Organic-Inorganic Trihalide Perovskites

Organic-inorganic perovskite solar cells have attracted tremendous attention because of their remarkably high power conversion efficiencies (PCEs). To further improve the device performance, however, it is imperative to obtain fundamental understandings on the photo-response and long-term stability down to the microscopic level. Here, we report the first quantitative nanoscale photoconductivity imaging on two methylammonium lead triiodide (MAPbI3) thin films with different PCEs by light-stimulated microwave impedance microscopy. The intrinsic photo-response is largely uniform across grains and grain boundaries, which is direct evidence on the inherently benign nature of microstructures in the perovskite thin films. In contrast, the carrier mobility and lifetime are strongly affected by bulk properties such as the sample crystallinity. As visualized by the spatial evolution of local photoconductivity, the degradation due to water diffusion through the capping layer begins with the disintegration of large grains rather than the nucleation and propagation from grain boundaries. Our findings provide new insights to improve the electro-optical properties of MAPbI3 thin films towards large-scale commercialization.

cond-mat.mtrl-sci↗

arXiv2016

Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors

The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental importance for their applications in electronics and photonics. Because of the imperfections, electrons moving on these two-dimensional (2D) crystals experience a spatially non-uniform Coulomb environment, whose effect on the charge transport has not been microscopically studied. Here, we report the mesoscopic conductance mapping in monolayer and few-layer MoS2 field-effect transistors (FETs) by microwave impedance microscopy (MIM). The spatial evolution of the insulator-to-metal transition is clearly resolved. Interestingly, as the transistors are gradually turned on, electrical conduction emerges initially at the edges before appearing in the bulk of MoS2 flakes, which can be explained by our first-principles calculations. The results unambiguously confirm that the contribution of edge states to the channel conductance is significant under the threshold voltage but negligible once the bulk of the TMD device becomes conductive. Strong conductance inhomogeneity, which is associated with the fluctuations of disorder potential in the 2D sheets, is also observed in the MIM images, providing a guideline for future improvement of the device performance.

cond-mat.mes-hall↗

arXiv2016

Large-area and high-quality 2D transition metal telluride

Atomically thin transitional metal ditellurides like WTe2 and MoTe2 have triggered tremendous research interests because of their intrinsic nontrivial band structure. They are also predicted to be 2D topological insulators and type-II Weyl semimetals. However, most of the studies on ditelluride atomic layers so far rely on the low-yield and time-consuming mechanical exfoliation method. Direct synthesis of large-scale monolayer ditellurides has not yet been achieved. Here, using the chemical vapor deposition (CVD) method, we demonstrate controlled synthesis of high-quality and atom-thin tellurides with lateral size over 300 μm. We found that the as-grown WTe2 maintains two different stacking sequences in the bilayer, where the atomic structure of the stacking boundary is revealed by scanning transmission electron microscope (STEM). The low-temperature transport measurements revealed a novel semimetal-to-insulator transition in WTe2 layers and an enhanced superconductivity in few-layer MoTe2. This work paves the way to the synthesis of atom-thin tellurides and also quantum spin Hall devices.

cond-mat.mtrl-sci↗

arXiv2016

Design of the readout electronics for the DAMPE Silicon Tracker detector

The Silicon Tracker (STK) is a detector of the DAMPE satellite to measure the incidence direction of high energy cosmic ray. It consists of 6 X-Y double layers of silicon micro-strip detectors with 73,728 readout channels. It's a great challenge to readout the channels and process the huge volume of data in the critical space environment. 1152 Application Specific Integrated Circuits (ASIC) and 384 ADCs are adopted to readout the detector channels. The 192 Tracker Front-end Hybrid (TFH) modules and 8 identical Tracker Readout Board (TRB) modules are designed to control and digitalize the front signals. In this paper, the design of the readout electronics for STK and its performance will be presented in detail.

physics.ins-det↗

arXiv2016

Ferroelectric domain inversion and its stability in lithium niobate thin film on insulator with different thicknesses

Ferroelectric domain inversion and its effect on the stability of lithium niobate thin films on insulator (LNOI) are experimentally characterized. Two sets of specimens with different thicknesses varying from submicron to microns are selected. For micron thick samples (~28 um), domain structures are achieved by pulsed electric field poling with electrodes patterned via photolithography. No domain structure deterioration has been observed for a month as inspected using polarizing optical microscopy and etching. As for submicron (540 nm) films, large-area domain inversion is realized by scanning a biased conductive tip in a piezoelectric force microscope. A graphic processing method is taken to evaluate the domain retention. A domain life time of 25.0 h is obtained and possible mechanisms are discussed. Our study gives a direct reference for domain structure-related applications of LNOI, including guiding wave nonlinear frequency conversion, nonlinear wavefront tailoring, electro-optic modulation, and piezoelectric devices.

cond-mat.mtrl-sci↗

arXiv2016

The (vertex-)monochromatic index of a graph

A tree $T$ in an edge-colored graph $H$ is called a \emph{monochromatic tree} if all the edges of $T$ have the same color. For $S\subseteq V(H)$, a \emph{monochromatic $S$-tree} in $H$ is a monochromatic tree of $H$ containing the vertices of $S$. For a connected graph $G$ and a given integer $k$ with $2\leq k\leq |V(G)|$, the \emph{$k$-monochromatic index $mx_k(G)$} of $G$ is the maximum number of colors needed such that for each subset $S\subseteq V(G)$ of $k$ vertices, there exists a monochromatic $S$-tree. In this paper, we prove that for any connected graph $G$, $mx_k(G)=|E(G)|-|V(G)|+2$ for each $k$ such that $3\leq k\leq |V(G)|$. A tree $T$ in a vertex-colored graph $H$ is called a \emph{vertex-monochromatic tree} if all the internal vertices of $T$ have the same color. For $S\subseteq V(H)$, a \emph{vertex-monochromatic $S$-tree} in $H$ is a vertex-monochromatic tree of $H$ containing the vertices of $S$. For a connected graph $G$ and a given integer $k$ with $2\leq k\leq |V(G)|$, the \emph{$k$-monochromatic vertex-index $mvx_k(G)$} of $G$ is the maximum number of colors needed such that for each subset $S\subseteq V(G)$ of $k$ vertices, there exists a vertex-monochromatic $S$-tree. We show that for a given a connected graph $G$, and a positive integer $L$ with $L\leq |V(G)|$, to decide whether $mvx_k(G)\geq L$ is NP-complete for each integer $k$ such that $2\leq k\leq |V(G)|$. We also obtain some Nordhaus-Gaddum-type results for the $k$-monochromatic vertex-index.

math.CO↗

arXiv2016

Laser-assisted Oxidation of Multi-layer Tungsten Diselenide Nanosheets

We report the structural and electrical characterization of tungsten oxides formed by illuminating multi-layer tungsten diselenide (WSe2) nanosheets with an intense laser beam in the ambient environment. A noninvasive microwave impedance microscope (MIM) was used to perform electrical imaging of the samples. The local conductivity ~100 S/m of the oxidized product, measured by the MIM and conventional transport experiments, is much higher than that of the pristine WSe2, suggesting the formation of sub-stoichiometric WO3-x polycrystals with n-type carriers. With further efforts to improve the conductivity of the oxides, the laser-assisted oxidation process may be useful for patterning conductive features on WSe2 or forming electrical contacts to various transition metal dichalcogenides.

cond-mat.mtrl-sci↗

arXiv2015

Thickness-dependent Dielectric Constant of Few-layer In2Se3 Nano-flakes

The dielectric constant or relative permittivity of a dielectric material, which describes how the net electric field in the medium is reduced with respect to the external field, is a parameter of critical importance for charging and screening in electronic devices. Such a fundamental material property is intimately related to not only the polarizability of individual atoms, but also the specific atomic arrangement in the crystal lattice. In this letter, we present both experimental and theoretical investigations on the dielectric constant of few-layer In2Se3 nano-flakes grown on mica substrates by van der Waals epitaxy. A nondestructive microwave impedance microscope is employed to simultaneously quantify the number of layers and local electrical properties. The measured dielectric constant increases monotonically as a function of the thickness and saturates to the bulk value at around 6 ~ 8 quintuple layers. The same trend of layer-dependent dielectric constant is also revealed by first-principle calculations. Our results of the dielectric response, being ubiquitously applicable to layered 2D semiconductors, are expected to be significant for this vibrant research field.

cond-mat.mes-hall↗

arXiv2015

Hardness result for the total rainbow $k$-connection of graphs

A path in a total-colored graph is called \emph{total rainbow} if its edges and internal vertices have distinct colors. For an $\ell$-connected graph $G$ and an integer $k$ with $1\leq k \leq\ell$, the \emph{total rainbow $k$-connection number} of $G$, denoted by $trc_k(G)$, is the minimum number of colors used in a total coloring of $G$ to make $G$ \emph{total rainbow $k$-connected}, that is, any two vertices of $G$ are connected by $k$ internally vertex-disjoint total rainbow paths. In this paper, we study the computational complexity of total rainbow $k$-connection number of graphs. We show that it is NP-complete to decide whether $trc_k(G)=3$.

math.CO↗

arXiv2015

Thermal Oxidation of WSe2 Nano-sheets Adhered on SiO2/Si Substrates

Due to the drastically different intralayer versus interlayer bonding strengths, the mechanical, thermal, and electrical properties of two-dimensional (2D) materials are highly anisotropic between the in-plane and out-of-plane directions. The structural anisotropy may also play a role in chemical reactions, such as oxidation, reduction, and etching. Here, the composition, structure, and electrical properties of mechanically exfoliated WSe2 nano- sheets on SiO2/Si substrates were studied as a function of the extent of thermal oxidation. A major component of the oxidation, as indicated from optical and Raman data, starts from the nano-sheet edges and propagates laterally towards the center. Partial oxidation also occurs in certain areas at the surface of the flakes, which are shown to be highly conductive by microwave impedance microscopy. Using secondary ion mass spectroscopy, we also observed extensive oxidation at the WSe2/SiO2 interface. The combination of multiple microcopy methods can thus provide vital information on the spatial evolution of chemical reactions on 2D materials and the nanoscale electrical properties of the reaction products.

cond-mat.mtrl-sci↗

arXiv2015

Controlled Synthesis of Organic/Inorganic van der Waals Solid for Tunable Light-matter Interactions

Van der Waals (vdW) solids, as a new type of artificial materials that consist of alternating layers bonded by weak interactions, have shed light on fascinating optoelectronic device concepts. As a result, a large variety of vdW devices have been engineered via layer-by-layer stacking of two-dimensional materials, although shadowed by the difficulties of fabrication. Alternatively, direct growth of vdW solids has proven as a scalable and swift way, highlighted by the successful synthesis of graphene/h-BN and transition metal dichalcogenides (TMDs) vertical heterostructures from controlled vapor deposition. Here, we realize high-quality organic and inorganic vdW solids, using methylammonium lead halide (CH3NH3PbI3) as the organic part (organic perovskite) and 2D inorganic monolayers as counterparts. By stacking on various 2D monolayers, the vdW solids behave dramatically different in light emission. Our studies demonstrate that h-BN monolayer is a great complement to organic perovskite for preserving its original optical properties. As a result, organic/h-BN vdW solid arrays are patterned for red light emitting. This work paves the way for designing unprecedented vdW solids with great potential for a wide spectrum of applications in optoelectronics.

physics.chem-ph↗

arXiv2015

Gevrey class smoothing effect for the Prandtl equation

It is well known that the Prandtl boundary layer equation is instable, and the well-posedness in Sobolev space for the Cauchy problem is an open problem. Recently, under the Oleinik's monotonicity assumption for the initial datum, [1] have proved the local well-posedness of Cauchy problem in Sobolev space (see also [21]). In this work, we study the Gevrey smoothing effects of the local solution obtained in [1]. We prove that the Sobolev's class solution belongs to some Gevrey class with respect to tangential variables at any positive time.

math.AP↗

arXiv2015

Some extremal results on the colorful monochromatic vertex-connectivity of a graph

A path in a vertex-colored graph is called a \emph{vertex-monochromatic path} if its internal vertices have the same color. A vertex-coloring of a graph is a \emph{monochromatic vertex-connection coloring} (\emph{MVC-coloring} for short), if there is a vertex-monochromatic path joining any two vertices in the graph. For a connected graph $G$, the \emph{monochromatic vertex-connection number}, denoted by $mvc(G)$, is defined to be the maximum number of colors used in an \emph{MVC-coloring} of $G$. These concepts of vertex-version are natural generalizations of the colorful monochromatic connectivity of edge-version, introduced by Caro and Yuster. In this paper, we mainly investigate the Erdős-Gallai-type problems for the monochromatic vertex-connection number $mvc(G)$ and completely determine the exact value. Moreover, the Nordhaus-Gaddum-type inequality for $mvc(G)$ is also given.

math.CO↗

arXiv2015

DAMPE silicon tracker on-board data compression algorithm

The Dark Matter Particle Explorer (DAMPE) is an upcoming scientific satellite mission for high energy gamma-ray, electron and cosmic rays detection. The silicon tracker (STK) is a sub detector of the DAMPE payload with an excellent position resolution (readout pitch of 242um), which measures the incident direction of particles, as well as charge. The STK consists 12 layers of Silicon Micro-strip Detector (SMD), equivalent to a total silicon area of 6.5m$^2$. The total readout channels of the STK are 73728, which leads to a huge amount of raw data to be dealt. In this paper, we focus on the on-board data compression algorithm and procedure in the STK, which was initially verified by cosmic-ray measurements.

astro-ph.IM↗

arXiv2014

Erdős-Gallai-type results for colorful monochromatic connectivity of a graph

A path in an edge-colored graph is called a \emph{monochromatic path} if all the edges on the path are colored the same. An edge-coloring of $G$ is a \emph{monochromatic connection coloring} (MC-coloring, for short) if there is a monochromatic path joining any two vertices in $G$. The \emph{monochromatic connection number}, denoted by $mc(G)$, is defined to be the maximum number of colors used in an MC-coloring of a graph $G$. These concepts were introduced by Caro and Yuster, and they got some nice results. In this paper, we will study two kinds of Erdős-Gallai-type problems for $mc(G)$, and completely solve them.

math.CO↗

arXiv2014

Toward Air-Stable Multilayer Phosphorene Thin-Films and Transistors

Few-layer black phosphorus (BP), also known as phosphorene, is poised to be the most attractive graphene analogue owing to its high mobility approaching that of graphene, and its thickness- tunable band gap that can be as large as that of molybdenum disulfide. In essence, phosphorene represents the much sought after high-mobility, large direct band gap two-dimensional layered crystal that is ideal for optoelectronics and flexible devices. However, its instability in air is of paramount concern for practical applications. Here, we demonstrate air-stable BP devices with dielectric and hydrophobic encapsulation. Microscopy, spectroscopy, and transport techniques were employed to elucidate the aging mechanism, which can initiate from the BP surface for bare samples, or edges for samples with thin dielectric coating highlighting the ineffectiveness of conventional scaled dielectrics. Our pioneering months-long studies indicate that a double layer of Al2O3 and hydrophobic fluoropolymer affords BP devices and transistors with indefinite air-stability for the first time, overcoming a critical material challenge for applied research and development.

cond-mat.mtrl-sci↗

arXiv2014

Hawking radiation from rotating AdS black holes in conformal gravity

We extend to study Hawking radiation via tunneling in conformal gravity. We adopt Parikh-Wilczek's semi-classical tunneling method and the method of complex-path integral to investigate Hawking radiation from new rotating AdS black holes in conformal gravity. In this paper, the research on Hawking radiation from the rotating black holes is done in a general system, not limited in dragging coordinate systems any longer. Moreover, there existed some shortcomings in the previous derivation of geodesic equations. Different from the massless case, they used a different approach to derive the geodesic equation of the massive particles. Even the treatment was inconsistent with the variation principle of action. To remedy the shortcoming, we improve treatment to deduce the geodesic equations of massive and massless particles in a unified and self-consistent way. In addition, we also recover the Hawking temperature resorting to the complex-path integral method.

gr-qc↗