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Di Xiao

Publications and source records attributed to Di Xiao.

At least 253 records · Page 14Linked to original sources

Valley polarization in MoS2 monolayers by optical pumping

We report experimental evidences on selective occupation of the degenerate valleys in MoS2 monolayers by circularly polarized optical pumping. Over 30% valley polarization has been observed at K and K' valley via the polarization resolved luminescence spectra on pristine MoS2 monolayers. It demonstrates one viable way to generate and detect valley polarization towards the conceptual valleytronics applications with information carried by the valley index.

cond-mat.mes-hall↗

Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures

Topological insulators are characterized by a nontrivial band topology driven by the spin-orbit coupling. To fully explore the fundamental science and application of topological insulators, material realization is indispensable. Here we predict, based on tight-binding modeling and first-principles calculations, that bilayers of perovskite-type transition-metal oxides grown along the [111] crystallographic axis are potential candidates for two-dimensional topological insulators. The topological band structure of these materials can be fine-tuned by changing dopant ions, substrates, and external gate voltages. We predict that LaAuO$_3$ bilayers have a topologically-nontrivial energy gap of about 0.15 eV, which is sufficiently large to realize the quantum spin-Hall effect at room temperature. Intriguing phenomena, such as fractional quantum Hall effect, associated with the nearly-flat topologically-nontrivial bands found in $e_g$ systems are also discussed.

cond-mat.mtrl-sci↗

Possible interaction driven topological phases in (111) bilayers of LaNiO3

We use the variational mean-field approach to systematically study the phase diagram of a bilayer heterostructure of the correlated transition metal oxide LaNiO3, grown along the (111) direction. The Ni 3+ ions with d7 (or eg1) configuration form a buckled honeycomb lattice. We show that as a function of the strength of the on-site interactions, various topological phases emerge. In the presence of a reasonable size of the Hund's coupling, as the correlation is tuned from intermediate to strong, the following sequence of phases is found: (1) a Dirac half-semimetal phase, (2) a quantum anomalous hall insulator (QAHI) phase with Chern number one, and (3) a ferromagnetic nematic phase breaking the lattice point group symmetry. The spin-orbit couplings and magnetism are both dynamically generated in the QAHI phase.

cond-mat.str-el↗

First-principles calculation of topological invariants Z2 within the FP-LAPW formalism

In this paper, we report the implementation of first-principles calculations of topological invariants Z2 within the full-potential linearized augmented plane-wave (FP-LAPW) formalism. In systems with both time-reversal and spatial inversion symmetry (centrosymmetric), one can use the parity analysis of Bloch functions at time-reversal invariant momenta to determine the Z2 invariants. In systems without spatial inversion symmetry (noncentrosymmetric), however, a more complex and systematic method in terms of the Berry gauge potential and the Berry curvature is required to identify the band topology. We show in detail how both methods are implemented in FP-LAPW formalism and applied to several classes of materials including centrosymmetric compounds Bi2Se3 and Sb2Se3 and noncentrosymmetric compounds LuPtBi, AuTlS2 and CdSnAs2. Our work provides an accurate and effective implementation of first-principles calculations to speed up the search of new topological insulators.

cond-mat.str-el↗

Temperature Dependence of the Intrinsic Anomalous Hall Effect in Nickel

We investigate the unusual temperature dependence of the anomalous Hall effect in Ni. By varying the thickness of the MBE-grown Ni films, the longitudinal resistivity is uniquely tuned without resorting to doping impurities; consequently, the intrinsic and extrinsic contributions are cleanly separated out. In stark contrast to other ferromagnets such as Fe, the intrinsic contribution in Ni is found to be strongly temperature dependent with a value of 1100 (ohm*cm)^(-1) at low temperatures and 500 (ohm*cm)^(-1) at high temperatures. This pronounced temperature dependence, a cause of long-standing confusion concerning the physical origin of the AHE, is likely due to the small energy level splitting caused by the spin orbit coupling close to the Fermi surface. Our result helps pave the way for the general claim of the Berry-phase interpretation for the AHE.

cond-mat.mtrl-sci↗

CO Oxidation Facilitated by Robust Surface States on Au-Covered Topological Insulators

Surface states refer to electronic states emerging as a solid material terminates at a surface, and can be present in many systems. Despite their spatial proximity to material surfaces, surface states have been largely overlooked in fundamental understanding of surface catalysis and potential real-world applications, because of their vulnerability to local impurities or defects. In contrast, the recently discovered three-dimensional topological insulators (3DTI) have exceptionally robust metallic surface states that are topologically protected against surface contamination and imperfection. The robust topological surface state(s) (TSS) provides a perfect platform for exploiting novel physical phenomena and potential applications of surface states in less stringent environments. Here we employ first-principles density functional theory to demonstrate that the TSS can play a vital and elegant role in facilitating surface reactions by serving as an effective electron bath. We use CO oxidation on gold-covered Bi2Se3 as a prototype example, and first show that the TSS is preserved when a stable ultrathin Au film is deposited onto a Bi-terminated Bi2Se3 substrate. Furthermore, the TSS can significantly enhance the adsorption energy of both CO and O2 molecules, by promoting different directions of electron transfer. For CO, the TSS accepts electrons from the CO-Au system, thereby decreasing the undesirable occupation of the CO antibonding states. For O2, the TSS donates the needed electrons to promote the molecule towards dissociative adsorption. The present study adds a new arena to the technological potentials of 3DTI, and the central concept of TSS as an electron bath as revealed here may lead to new design principles beyond the conventional d-band theory of heterogeneous catalysis.

cond-mat.mtrl-sci↗

Half-Heusler Topological Insulators: A First-Principle Study with the Tran-Blaha Modified Becke-Johnson Density Functional

We systematically investigate the topological band structures of half-Heusler compounds using first-principles calculations. The modified Becke-Johnson exchange potential together with local density approximation for the correlation potential (MBJLDA) has been used here to obtain accurate band inversion strength and band order. Our results show that a large number of half-Heusler compounds are candidates for three-dimensional topological insulators. The difference between band structures obtained using the local density approximation (LDA) and MBJLDA potential is also discussed.

cond-mat.mtrl-sci↗

Half-Heusler Compounds as a New Class of Three-Dimensional Topological Insulators

Using first-principles calculations within density functional theory, we explore the feasibility of converting ternary half-Heusler compounds into a new class of three-dimensional topological insulators (3DTI). We demonstrate that the electronic structure of unstrained LaPtBi as a prototype system exhibits distinct band-inversion feature. The 3DTI phase is realized by applying a uniaxial strain along the [001] direction, which opens a bandgap while preserving the inverted band order. A definitive proof of the strained LaPtBi as a 3DTI is provided by directly calculating the topological Z2 invariants in systems without inversion symmetry. We discuss the implications of the present study to other half-Heusler compounds as 3DTI, which, together with the magnetic and superconducting properties of these materials, may provide a rich platform for novel quantum phenomena.

cond-mat.mtrl-sci↗

Three-Dimensional Topological Insulators in I-III-VI$_2$ and II-IV-V$_2$ Chalcopyrite Semiconductors

The recent discovery of topological insulators with exotic metallic surface states has garnered great interest in the fields of condensed matter physics and materials science. A number of spectacular quantum phenomena have been predicted when the surface states are under the influence of magnetism and superconductivity, which could open up new opportunities for technological applications in spintronics and quantum computing. To achieve this goal, material realization of topological insulators with desired physical properties is of crucial importance. Based on first-principles calculations, here we show that a large number of ternary chalcopyrite compounds of composition I-III-VI$_2$ and II-IV-V$_2$ can realize the topological insulating phase in their native states. The crystal structure of chalcopyrites is derived from the frequently used zinc-blende structure, and many of them possess a close lattice match to important mainstream semiconductors, which is essential for a smooth integration into current semiconductor technology. The diverse optical, electrical and structural properties of chalcopyrite semiconductors, and particularly their ability to host room-temperature ferromagnetism, make them appealing candidates for novel spintronic devices.

cond-mat.mtrl-sci↗

Berry Phase Effects on Electronic Properties

Ever since its discovery, the Berry phase has permeated through all branches of physics. Over the last three decades, it was gradually realized that the Berry phase of the electronic wave function can have a profound effect on material properties and is responsible for a spectrum of phenomena, such as ferroelectricity, orbital magnetism, various (quantum/anomalous/spin) Hall effects, and quantum charge pumping. This progress is summarized in a pedagogical manner in this review. We start with a brief summary of necessary background, followed by a detailed discussion of the Berry phase effect in a variety of solid state applications. A common thread of the review is the semiclassical formulation of electron dynamics, which is a versatile tool in the study of electron dynamics in the presence of electromagnetic fields and more general perturbations. Finally, we demonstrate a re-quantization method that converts a semiclassical theory to an effective quantum theory. It is clear that the Berry phase should be added as a basic ingredient to our understanding of basic material properties.

cond-mat.mes-hall↗

Valley Dependent Optoelectronics from Inversion Symmetry Breaking

Inversion symmetry breaking allows contrasted circular dichroism in different k-space regions, which takes the extreme form of optical selection rules for interband transitions at high symmetry points. In materials where band-edges occur at noncentral valleys, this enables valley dependent interplay of electrons with light of different circular polarizations, in analogy to spin dependent optical activities in semiconductors. This discovery is in perfect harmony with the previous finding of valley contrasted Bloch band features of orbital magnetic moment and Berry curvatures from inversion symmetry breaking [Phys. Rev. Lett. 99, 236809 (2007)]. A universal connection is revealed between the k-resolved optical oscillator strength of interband transitions, the orbital magnetic moment and the Berry curvatures, which also provides a principle for optical measurement of orbital magnetization and intrinsic anomalous Hall conductivity in ferromagnetic systems. The general physics is demonstrated in graphene where inversion symmetry breaking leads to valley contrasted optical selection rule for interband transitions. We discuss graphene based valley optoelectronics applications where light polarization information can be interconverted with electronic information.

cond-mat.mes-hall↗

Theory of Electromotive Force Induced by Domain Wall Motion

We formulate a theory on the dynamics of conduction electrons in the presence of moving magnetic textures in ferromagnetic materials. We show that the variation of local magnetization in both space and time gives rise to topological fields, which induce electromotive forces on the electrons. Universal results are obtained for the emf induced by both transverse and vortex domain walls traveling in a magnetic film strip, and their measurement may provide clear characterization on the motion of such walls.

cond-mat.mtrl-sci↗

Theory of electric polarization induced by inhomogeneity in crystals

We develop a general theory of electric polarization induced by inhomogeneity in crystals. We show that contributions to polarization can be classified in powers of the gradient of the order parameter. The zeroth order contribution reduces to the well-known result obtained by King-Smith and Vanderbilt for uniform systems. The first order contribution, when expressed in a two-point formula, takes the Chern-Simons 3-form of the vector potentials derived from the Bloch wave functions. Using the relation between polarization and charge density, we demonstrate our formula by studying charge fractionalization in a two-dimensional dimer model recently proposed.

cond-mat.mes-hall↗

Quantum Theory of Orbital Magnetization and its Generalization to Interacting Systems

Based on standard perturbation theory, we present a full quantum derivation of the formula for the orbital magnetization in periodic systems. The derivation is generally valid for insulators with or without a Chern number, for metals at zero or finite temperatures, and at weak as well as strong magnetic fields. The formula is shown to be valid in the presence of electron-electron interaction, provided the one-electron energies and wave functions are calculated self-consistently within the framework of the exact current and spin density functional theory.

cond-mat.mes-hall↗

Valley contrasting physics in graphene: magnetic moment and topological transport

We investigate physical properties that can be used to distinguish the valley degree of freedom in systems where inversion symmetry is broken, using graphene systems as examples. We show that the pseudospin associated with the valley index of carriers has an intrinsic magnetic moment, in close analogy with the Bohr magneton for the electron spin. There is also a valley dependent Berry phase effect that can result in a valley contrasting Hall transport, with carriers in different valleys turning into opposite directions transverse to an in-plane electric field. These effects can be used to generate and detect valley polarization by magnetic and electric means, forming the basis for the so-called valley-tronics applications.

cond-mat.mtrl-sci↗

Theory of conserved spin current and its application to two dimensional hole gas

We present a detailed microscopic theory of the conserved spin current which is introduced by us [Phys. Rev. Lett. \textbf{96}, 196602 (2006)] and satisfies the spin continuity equation even for spin-orbit coupled systems. The spin transport coefficients $σ_{μν}^{s}$ as a response to the electric field are shown to consist of two parts, i.e., the conventional part $σ_{μν}^{s0}$ and the spin torque dipole correction $σ_{μν}^{sτ}$. As one key result, an Onsager relation between $σ_{μν}^{s}$ and other kinds of transport coefficients are shown. The expression for $σ_{μν}^{s}$ in terms of single-particle Bloch states are derived, by use of which we study the conserved spin Hall conductivity in the two dimensional hole gas modeled by a combined Luttinger and SIA Rashba spin-orbit coupling. It is shown that the two components in spin Hall conductivity usually have the opposite contributions. While in the absence of Rashba spin splitting, the spin Hall transport is dominated by the conventional contribution, the presence of Rashba spin splitting stirs up a large enhancement of the spin torque dipole correction, leading to an overall sign change for the total spin Hall conductivity. Furthermore, an approximate two-band calculation and the subsequent comparison with the exact four-band results are given, which reveals that the coupling between the heavy hole and light hole bands should be taken into account for strong Rashba spin splitting.

cond-mat.mes-hall↗

Theoretical Evidence for the Berry-Phase Mechanism of Anomalous Hall Transport: First-principles Studies on CuCr$_2$Se$_{4-x}$Br$_x$

To justify the origin of anomalous Hall effect (AHE), it is highly desirable to have the system parameters tuned continuously. By quantitative calculations, we show that the doping dependent sign reversal in CuCr$_{2}$Se$_{4-x}$Br$_{x}$, observed but not understood, is nothing but direct evidence for the Berry-Phase mechanism of AHE. The systematic calculations well explain the experiment data for the whole doping range where the impurity scattering rates is changed by several orders with Br substitution. Further sign change is also predicted, which may be tested by future experiments.

cond-mat.mes-hall↗

Berry phase effect in anomalous thermoelectric transport

We develop a theory of Berry phase effect in anomalous transport in ferromagnets driven by statistical forces such as the gradient of temperature or chemical potential. Here a charge Hall current arises from the Berry phase correction to the orbital magnetization rather than from the anomalous velocity which does not exist in the absence of a mechanical force. A finite-temperature formula for the orbital magnetization is derived, which enables us to provide an explicit expression for the off-diagonal thermoelectric conductivity, to establish the Mott relation between the anomalous Nernst and Hall effects, and to reaffirm the Onsager relations between reciprocal thermoelectric conductivities. A first-principles evaluation of our expression is carried out for the material CuCr$_2$Se$_{4-x}$Br$_x$, obtaining quantitative agreement with a recent experiment.

cond-mat.mes-hall↗