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Dibakar Yadav

Publications and source records attributed to Dibakar Yadav.

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Coherent Exchange and Decoherence in Dirac-Spin-Liquid Quantum Interconnects

We develop a susceptibility-based open-system theory for two localized qubits coupled through a candidate two-dimensional $\mathrm{U}(1)$ Dirac-spin-liquid-like bath. The central input is the gauge-invariant retarded physical spin susceptibility $\Chi^R(q,ω)$ of the bath. We show that this single response kernel controls both coherent and dissipative qubit dynamics: its real part generates the nonlocal mediated exchange, while its absorptive part determines relaxation and dephasing through the equilibrium noise spectrum. This gives a unified reduced two-qubit description in which the usefulness of the bath as an entanglement bus is governed by the competition between susceptibility-mediated exchange and bath-induced decoherence. As an analytically transparent benchmark, we evaluate the spinon mean-field Dirac susceptibility and recover the static algebraic exchange $J_{\mathrm{eff}}(R)\propto J_{\rm local}^2/(v_F R^3)$, together with pseudogap-suppressed relaxation $Γ_1\propto J_{\rm local}^2ω_0^3/v_F^4$. We then formulate a beyond-mean-field extension in which gauge-field dressing and other interaction effects are absorbed into a dressed physical susceptibility, without changing the reduced qubit-sector mapping. The resulting framework provides a direct route from the many-body spin response of a correlated two-dimensional bath to reduced-dynamics simulations of entanglement generation, coherence loss, and the operational phase space of a candidate Dirac spin-liquid quantum interconnect.

quant-ph

Impact of Source to Drain Tunneling on the Ballistic Performance of Ge, GaSb, and GeSn Nanowire p-MOSFETs

We investigated the effect of material choice and orientation in limiting source to drain tunneling (SDT) in nanowire (NW) p-MOSFETs. Si, Ge, GaSb, and Ge0.96Sn0.04 nanowire MOSFETs (NWFETs) were simulated using rigorous ballistic quantum transport simulations. To properly account for the non-parabolicity and anisotropy of the valence band the k.p method was used. For each material, a set of six different transport/confinement directions were simulated to identify the direction with the highest ON-current (ION ). For Ge, GaSb, and GeSn [001]/110/-110 oriented NWFETs showed the best ON-state performance, compared to other orientations. Our simulation results show that, despite having a higher percentage of SDT in OFF-state than silicon, GaSb [001]/110/-110 NWFET can outperform Si NWFETs. We further examined the role of doping in limiting SDT and demonstrated that the ON-state performance of Ge and GeSn NWFETs could be improved by reducing the doping in the source/drain (S/D) extension regions. Finally, we analyzed the impact of increased injection velocity in [ [001]/110/-110 oriented GaSb and GeSn NWFETs, as a result of the application of uniaxial compressive stress, and showed that when compared at a fixed OFF-current (IOFF) with unstrained NWFETs, uniaxial compressive stress deteriorates the ON-state performancedue to an increase in OFF-state SDT current component.

physics.app-ph