arXiv subjects

Dibya Phuyal

Publications and source records attributed to Dibya Phuyal.

9 recordsLinked to original sources

arXiv2025

Hidden Moiré Topology of Low-Symmetry Weyl Surfaces

Topological materials are defined by the correspondence between bulk topology and boundary states, yet this correspondence becomes enigmatic on low-symmetry surfaces where bulk and surface periodicities are inherently mismatched. Here we reveal a hidden moiré topology emerging on the (103) surface of the Weyl semimetal NdAlSi. Angle-resolved photoemission spectroscopy uncovers closed Fermi-arc loops and momentum-space moiré modulations, phenomena unanticipated in conventional topological theory. We show that these emerge from incomplete bulk projection and multi-cell interference governed by a least-common-multiple framework. Least-common-multiple guided DFT and Green's-function calculations quantitatively reproduce the observed spectra, establishing the universality of this commensuration rule. These findings transform a long-standing paradox of bulk-boundary correspondence into a new paradigm of momentum-space moiré reconstruction, bridging crystalline and quasicrystalline topologies and opening routes to flat-band engineering on complex surfaces.

cond-mat.mtrl-sci↗

arXiv2025

Extreme Strain Controlled Correlated Metal-Insulator Transition in the Altermagnet CrSb

Correlated flat bands and altermagnetism are two important directions in quantum materials, centred respectively on interaction-dominated phases and symmetry-enforced spin-textured states, yet both derive from lattice symmetry and orbital hybridization. This common origin implies that extreme crystal distortion, by narrowing bandwidths, enhancing correlations and reshaping the symmetries of altermagnetic spin splittings, could unify flat-band and altermagnetic physics in a single material; in practice, however, achieving such large distortions in a crystalline altermagnet is a formidable challenge. Here we combine a dedicated strain device with a tailored single-crystal mounting scheme to impose a highly tensile strain gradient in bulk CrSb, a prototypical altermagnet, creating a near-surface layer in which the in-plane lattice is strongly distorted relative to the weakly strained bulk, while the average bulk distortion remains small. Angle-resolved photoemission reveals a reversible regime at moderate strain, where a deeper flat-band feature, attributed to a strain-gradient-driven suppression of Cr-Sb hybridization, coexists with a correlation-enhanced Cr 3d flat band, and an irreversible regime at larger strain where partial bond decoupling drives a predominantly insulating spectral response. Density-functional calculations show that an orbital-selective altermagnetic spin texture persists across this correlated regime despite strong bandwidth renormalisation. These results define a strain-symmetry-correlation map for CrSb and establish extreme tensile strain as a route to co-engineer flat-band tendencies and spin-textured, zero-net-moment correlated states in altermagnets, pointing toward strain-adaptive, spin-selective Mott filtering and related device concepts.

cond-mat.str-el↗

arXiv2025

Ultra-clean interface between high k dielectric and 2D MoS2

Atomically thin transition metal dichalcogenides (TMDs) are promising candidates for next-generation transistor channels due to their superior scaling properties. However, the integration of ultra-thin gate dielectrics remains a challenge, as conventional oxides such as SiO2, Al2O3, and HfO2 tend to unintentionally dope 2D TMDs and introduce interfacial defect states, leading to undesirable field-effect transistor (FET) performance and unstable threshold voltages. Here, we demonstrate that zirconium oxide (ZrO2), a high-k dielectric compatible with semiconductor processing, forms an ultra-clean interface with monolayer MoS2. Using soft and hard X-ray photoelectron spectroscopy and density functional theory, we find that ZrO2 does not measurably interact with MoS2, in contrast to significant doping observed for SiO2 and HfO2 substrates. As a result, back-gated monolayer MoS2 FETs fabricated with ZrO2 dielectrics exhibit stable and positive threshold voltages (0.36 plus/minus 0.3 V), low subthreshold swing (75 mV per decade), and high ON currents exceeding 400 microamperes. We further demonstrate p-type WSe2 FETs with ON currents greater than 200 microamperes per micrometer by suppressing electron doping with ZrO2 dielectrics. Atomic-resolution imaging confirms a defect-free ZrO2/MoS2 interface, which enables top-gate FETs with an equivalent oxide thickness of 0.86 nanometers and subthreshold swing of 80 mV per decade. Moreover, the ultraclean ZrO2/MoS2 interface allows for effective threshold voltage modulation in top-gate FETs via gate metal work function engineering. These findings establish ZrO2 as a highly promising, industry-compatible high-k dielectric for scalable 2D TMD-based electronics.

cond-mat.mtrl-sci↗

arXiv2023

Experimentally observed defect tolerance in the electronic structure of lead bromide perovskites

Point defect tolerance in materials, which extends operational lifetime, is essential for societal sustainability, and the creation of a framework to design such properties is a grand challenge in the material sciences. Using three prototypical lead bromide perovskites in single crystal form and high-resolution synchrotron-based X-ray spectroscopy, we reveal the unexpectedly pivotal role of the A-cation in mediating the influence of photoinduced defects. Organic A-cation hydrogen bonding facilitates chemical flexing of the lead-bromide bond that mitigates the self-doping effect of bromide vacancies. The contribution of partially ionic lead-bromide bonding to the electronic band edges, where the bonding becomes more ionic upon the formation of defects, mitigates re-hybridization of the electronic structure upon degradation. These findings reveal two new general design principles for defect tolerance in materials. Our findings uncover the foundations of defect tolerance in halide perovskites and have implications for defect calculations, all beam-based measurements of photophysical properties and perovskite solar cell technology.

cond-mat.mtrl-sci↗

arXiv2022

In-situ exfoliation method of large-area 2D materials

The success in studying 2D materials inherently relies on producing samples of large area, and high quality enough for the experimental conditions. Because their 2D nature surface sensitive techniques such as photoemission spectroscopy , tunneling microscopy and electron diffraction, that work in ultra high vacuum (UHV) environment are prime techniques that have been employed with great success in unveiling new properties of 2D materials but it requires samples to be free of adsorbates. The technique that most easily and readily yields 2dmaterials of highest quality is indubitably mechanical exfoliation from bulk grown samples, however as this technique is traditionally done in dedicated environment, the transfer of these samples into UHV setups requires some form of surface cleaning that tempers with the sample quality. In this article, we report on a simple and general method of \textit{in-situ} mechanical exfoliation directly in UHV that yields large-area single-layered films. By employing standard UHV cleaning techniques and by purpusedly exploiting the chemical affinity between the substrate and the sample we could yield large area exfoliation of transition metal dichalcogenides. Multiple transition metal dichalcogenides, both metallic and semiconducting, are exfoliated \textit{in-situ} onto Au and Ag, and Ge. Exfoliated flakes are found to be sub-milimeter size with excellent crystallinity and purity, as evidenced by angle-resolved photoemission spectroscopy, atomic force microscopy and low-energy electron diffraction. In addition, we demonstrate exfoliation of air-sensitive 2D materials and possibility of controlling the substrate-2D material twist angle.

cond-mat.mtrl-sci↗

arXiv2021

A-site Cation Influence on the Conduction Band of Lead Bromide Perovskites

Hot carrier solar cells hold promise for exceeding the Shockley-Queisser limit. Slow hot carrier cooling is one of the most intriguing properties of lead halide perovskites and distinguishes this class of materials from competing materials used in solar cells. Here we use the element selectivity of high-resolution X-ray spectroscopy to uncover a previously hidden feature in the conduction band states, the σ-π energy separation, and find that it is strongly influenced by the strength of electronic coupling between the A-cation and bromide-lead sublattice. Our finding provides an alternative mechanism to the commonly discussed polaronic screening and hot phonon bottleneck carrier cooling mechanisms. Our work emphasizes the optoelectronic role of the A-cation, provides a comprehensive view of A-cation effects in the electronic and crystal structures, and outlines a broadly applicable spectroscopic approach for assessing the impact of chemical alterations of the A-cation on halide and potentially non-halide perovskite electronic structure.

cond-mat.mtrl-sci↗

arXiv2020

Growth of Transition Metal Dichalcogenides by Solvent Evaporation Technique

Due to their physical properties and potential applications in energy conversion and storage, transition metal dichalcogenides (TMDs) have garnered substantial interest in recent years. Amongst this class of materials, TMDs based on molybdenum, tungsten, sulfur and selenium are particularly attractive due to their semiconducting properties and the availability of bottom-up synthesis techniques. Here we report a method which yields high quality crystals of transition metal diselenide and ditelluride compounds (PtTe2, PdTe2, NiTe2, TaTe2, TiTe2, RuTe2, PtSe2, PdSe2, NbSe2, TiSe2, VSe2, ReSe2) from their solid solutions, via vapor deposition from a metal-saturated chalcogen melt. Additionally, we show the synthesis of rare-earth metal poly-chalcogenides and NbS2 crystals using the aforementioned process. Most of the obtained crystals have a layered CdI2 structure. We have investigated the physical properties of selected crystals and compared them to state-of-the-art findings reported in the literature. Remarkably, the charge density wave transition in 1T-TiSe2 and 2H-NbSe2 crystals is well-defined at TCDW ~ 200 K and ~ 33 K, respectively. Angle-resolved photoelectron spectroscopy and electron diffraction are used to directly access the electronic and crystal structures of PtTe2 single crystals, and yield state-of-the-art measurements.

cond-mat.mtrl-sci↗

arXiv2018

Exchange dependent ultrafast magnetization dynamics in Fe$_{1-x}$Ni$_{x}$ alloys

Element specific ultrafast demagnetization was studied in Fe$_{1-x}$Ni$_{x}$ alloys, covering the concentration range between $0.1<x<0.9$. For all compositions, we observe a delay in the onset of Ni demagnetization relative to the Fe demagnetization. We find that the delay is correlated to the Curie temperature and hence also the exchange interaction. The temporal evolution of demagnetization is fitted to a magnon diffusion model based on the presupposition of enhanced ultrafast magnon generation in the Fe sublattice. The spin wave stiffness extracted from this model correspond well to known experimental values.

cond-mat.mtrl-sci↗

arXiv2018

Two-dimensional flexible high diffusive spin circuits

Owing to their unprecedented electronic properties, graphene and two-dimensional (2D) crystals have brought fresh opportunities for advances in planar spintronic devices. Graphene is an ideal medium for spin transport while also being an exceptionally resilient material for flexible electronics. However, these extraordinary traits have never been combined to create flexible graphene spin circuits. Realizing such circuits could lead to bendable strain-based spin sensors, a unique platform to explore pure spin current based operations and low power flexible nanoelectronics. Here, we demonstrate graphene spin circuits on flexible substrates for the first time. These circuits, realized using chemical vapour deposited (CVD) graphene, exhibit large spin diffusion coefficients ~0.19-0.24 m2s-1 at room temperature. Compared to conventional devices of graphene on Si/SiO2 substrates, such values are 10-20 times larger and result in a maximum spin diffusion length ~10 um in graphene achieved on such industry standard substrates, showing one order enhanced room temperature non-local spin signals. These devices exhibit state of the art spin diffusion, arising out of a distinct substrate topography that facilitates efficient spin transport, leading to a scalable, high-performance platform towards flexible 2D spintronics. Our innovation unlocks a new domain for the exploration of strain-dependent spin phenomena and paves the way for flexible graphene spin memory-logic units and surface mountable sensors.

cond-mat.mes-hall↗