Diego Exposito | Searcharxiv

arXiv2026

A low-temperature ultra-high-vacuum scanning probe microscope with in situ electronic transport capabilities: from macro to nano in 10 minutes

We have developed a low temperature (LT), ultra-high-vacuum (UHV) system that combines two complementary techniques, scanning probe microscopy (SPM) and electrical transport measurements, within a single platform. By providing simultaneous access to the atomic-scale surface landscape and the macroscopic device response of the same sample, the setup enables direct correlations between local structural/spectroscopic signatures and global electronic transport behavior in two-dimensional (2D) devices. The system allows experiments where atomic-scale modifications or controlled manipulations are performed while continuously monitoring their impact on device-scale performance. The setup consists of two interconnected UHV chambers: a dedicated preparation chamber and a separate measurement chamber that houses a liquid-helium cryostat and the SPM/transport stage. Base pressure is 1x10^-11 Torr. A key feature is direct optical access to the sample, enabling rapid and reliable tip positioning with an accuracy of 5 microns x 5 microns within 10 minutes. The SPM, operated using custom-built electronics, can track the exact same sample region across a temperature range from 2.9 K to 400 K, with mechanical stability below 1 pm. System performance is demonstrated on graphene devices, and bulk Pb is used to determine energy resolution. Using superconducting tips, scanning tunneling spectroscopy measures the superconducting gap with an energy resolution of 30 microV. Transport measurements track the temperature dependence of both resistivity and critical current across the superconducting transition of an in-situ prepared Pb nanowire.

cond-mat.mes-hall↗

arXiv2025

Beyond Seamless: Unexpected Defective Merging in Single-Orientation Graphene

Single-orientation stitching of graphene has emerged as the predominant method for growth of large-area, high-quality graphene films. Particularly noteworthy is graphene grown on single-crystalline Cu(111)/sapphire substrates, which exhibits exceptionally planar oriented stitching due to the atomically smooth substrate, facilitating the formation of continuous, high-quality graphene monolayer. These single-orientation stitches have conventionally been regarded as seamless with negligible defect concentrations. In this report, we present experimental observations regarding graphene grown on single-crystalline Cu(111)/sapphire substrates. Among the graphene flakes with single-orientation, our findings reveal two major merging behaviors: one producing the expected seamless stitching, and another unexpectedly generating structural defects that create nanoscale pathways permitting water permeation. Notably, we identify a unique merging structure--overlapped junction, in which the edge of one graphene flake overlaps and lies atop the edge of another flake, rather than forming a continuous atomic stitch. This discovery challenges the conventional anticipation of single-orientation stitched graphene films as seamless single crystalline film, while offers unique perspective for graphene applications in molecular sieving, selective filtration membranes, and protective coatings.

cond-mat.mtrl-sci↗