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Diego Garcia Ovalle

Publications and source records attributed to Diego Garcia Ovalle.

3 recordsLinked to original sources

Spin and orbital-to-charge conversion in noncentrosymmetric materials: Hall versus Rashba-Edelstein effects

We investigate spin- and orbital-to-charge conversion phenomena in nonmagnetic materials with broken inversion symmetry, treating the contributions from the Hall effect and the Rashba-Edelstein effect on an equal footing. We develop a general formalism for this interconversion based solely on macroscopic observables. The theory is validated through a case study of ferroelectric GeTe, where we find that the effective Rashba parameter obtained is smaller than previously reported values for the same material. Incorporating these parameters into a drift-diffusion model, we show that the generated charge current is primarily governed by the Rashba-Edelstein effect, rather than by the spin or orbital Hall effects.

cond-mat.mes-hall↗

Orbital Kerr effect and terahertz detection via the nonlinear Hall effect

We investigate the optical response induced by a d.c. current flowing in a nonmagnetic material that lacks inversion symmetry. In this class of materials, the flowing current experiences a nonlinear Hall effect and induces a nonequilibrium orbital magnetization, even in the absence of spin-orbit coupling. As a result, an orbital-driven Kerr effect arises that can be used to probe not only the orbital magnetization but also the nonlinear Hall effect. In addition, in the long wavelength limit, the nonlinear Hall effect leads to a rectification current that can be used to detect terahertz radiation. We apply the theory to selected model systems, such as WTe$_2$ bilayer and metallic superlattices. The nonequilibrium orbital Kerr efficiencies obtained in these systems are comparable to the largest values reported experimentally in GaAs and MoS$_2$, exceeding the values reported in metals and suggesting a large terahertz current responsivity.

cond-mat.mtrl-sci↗

Orbital Hall effect in crystals: inter-atomic versus intra-atomic contributions

The orbital Hall effect (OHE) designates the generation of a charge-neutral flow of orbital angular momentum transverse to an initial charge current. Recent theoretical investigations suggest that transition metals display sizable OHE, encouraging experimental search along this direction. Nonetheless, most of these theories assume that the orbital moment originates from the region immediately surrounding the atom core, adopting the so-called {\it atomic center approximation}. In periodic crystals though, the contribution of the interstitial regions is crucial and can lead to a severe misestimation of the OHE. By applying the "modern theory" of orbital magnetization to the OHE, we assess the relative importance of intra-atomic and inter-atomic contributions in selected materials from first principles. We find that whereas the OHE is mostly of intra-atomic origin for wide band-gap semiconductors (e.g., MoS$_2$), the inter-atomic contribution becomes crucial in narrow band-gap semiconductors (SnTe, PbTe) and transition metals (Pt, V etc.). These predictions invalidate the atomic center approximation adopted in some of the previous works and open perspectives for the realization of efficient sources of orbital currents.

cond-mat.mes-hall↗