arXiv subjects

Dimitre Dimitrov

Publications and source records attributed to Dimitre Dimitrov.

5 recordsLinked to original sources

arXiv2026

Strain-Mediated Lattice Reconstruction Enhances Ferromagnetism in Cr2Ge2Te6/WTe2 van der Waals Heterobilayers

Van der Waals (vdW) heterostructures enable tailored electronic and magnetic phases by stacking atomically thin layers with pristine interfaces. Here, we investigate fully 2D Cr2Ge2Te6/WTe2 heterostructures and identify a strong enhancement of ferromagnetism in Cr2Ge2Te6 (CGT). Magnetotransport measurements across multiple devices with WTe2 thicknesses ranging from monolayer to bulk reveal a robust anomalous Hall effect together with a more than twofold increase of the Curie temperature and substantially enhanced coercive fields. Interface microscopy confirms chemically abrupt vdW interfaces with no detectable interdiffusion, while control experiments rule out processing- or stray-field-induced artifacts. Our experiments and theoretical calculations demonstrate that interfacial charge transfer renders CGT conductive and that proximity-induced lattice distortions in CGT enhance exchange and magnetocrystalline anisotropy. These results establish strain-mediated lattice reconstruction as a strategy for engineering high-temperature magnetic order in 2D heterostructures and clarify that modifications within the magnetic layer itself can govern proximity effects in vdW stacks.

cond-mat.mtrl-sci↗

arXiv2026

Hanle lineshapes and spin-rotation signatures from in-plane anisotropic spin relaxation in heterogeneous spin devices

Spin precession experiments in lateral spin devices are a powerful tool for probing the spin transport properties of materials. These experiments can be quantitatively described using the Bloch diffusion equation, which offers a practical framework for modeling spin-related phenomena. In this work, we present calculations of the spin density across heterogeneous, diffusive spintronic devices. The modeled devices feature spin transport channels that include both isotropic and in-plane anisotropic spin relaxation regions. We analyze how different geometric configurations and spin transport parameters influence the lineshape of spin precession signals under magnetic fields applied in different orientations and compare with experimental observations. Our results introduce a theoretical framework for interpreting spin transport measurements in lateral graphene spin devices. The framework is especially relevant when the graphene is partially proximitized by other two-dimensional materials, where proximity-induced spin-orbit coupling leads to anisotropic spin relaxation.

cond-mat.mes-hall↗

arXiv2025

Room-temperature anisotropic in-plane spin dynamics in graphene induced by PdSe$_2$ proximity

Van der Waals heterostructures offer a versatile platform for tailoring electrical, magnetic, optical, and spin transport properties of materials through proximity effects. Notably, hexagonal transition metal dichalcogenides have been shown to induce valley-Zeeman spin-orbit coupling (SOC) in graphene, resulting in significant spin lifetime anisotropy between in-plane and out-of-plane spin orientations. However, in-plane lifetimes remain isotropic due to the inherent threefold symmetry of the heterostructure. Here, we demonstrate that pentagonal PdSe$_2$, characterised by unique in-plane anisotropy, induces an unprecedented gate-tunable SOC in graphene. Our measurements reveal a remarkable 10-fold modulation of the spin lifetime for spins oriented within the graphene plane at room temperature. Moreover, the directional dependence of the spin lifetimes, along the three spatial directions, suggests the existence of a persistent in-plane spin texture component that dominates the spin dynamics. These findings deepen our understanding of spin dynamics in van der Waals heterostructures and open avenues for designing and engineering novel topological phases in graphene-based heterostructures within the strong SOC regime.

cond-mat.mes-hall↗

arXiv2022

Resolving spin currents and spin densities generated by charge-spin interconversion in systems with reduced crystal symmetry

The ability to control the generation of spins in arbitrary directions is a long-sought goal in spintronics. Charge-to-spin interconversion (CSI) phenomena depend strongly on symmetry. Systems with reduced crystal symmetry allow anisotropic CSI with unconventional components, where charge and spin currents and the spin polarization are not mutually perpendicular to each other. Here, we demonstrate experimentally that the CSI in graphene-WTe2 induces spins with components in all three spatial directions. By performing multi-terminal nonlocal spin precession experiments, with specific magnetic field orientations, we discuss how to disentangle the CSI from the spin Hall and inverse spin galvanic effects.

cond-mat.mes-hall↗

arXiv2021

Monte Carlo Modeling of Spin-polarized Photoemission from p-doped GaAs Activated to Negative Electron Affinity

The anticorrelation between quantum efficiency (QE) and electron spin polarization (ESP) from a p-doped GaAs activated to negative electron affinity (NEA) is studied in detail using an ensemble Monte Carlo approach. The photoabsorption, momentum and spin relaxation during transport, and tunnelling of electrons through the surface potential barrier are modeled to identify fundamental mechanisms, which limit the efficiency of GaAs spin-polarized electron sources. In particular, we study the response of QE and ESP to various parameters such as the photoexcitation energy, doping density, and electron affinity level. Our modeling results for various transport and emission characteristics are in a good agreement with available experimental data. Our findings show that the behaviour of both QE and ESP at room temperature can be fully explained by the bulk relaxation mechanisms and the time which electrons spend in the material before being emitted.

physics.app-ph↗