arXiv subjects

Dimitrie Culcer

Publications and source records attributed to Dimitrie Culcer.

At least 91 records · Page 5Linked to original sources

arXiv2019

Hidden Anisotropy in the Drude Conductivity of Charge Carriers with Dirac-Schrödinger Dynamics

We show that the conductivity of a two-dimensional electron gas can be intrinsically anisotropic despite isotropic Fermi surface, energy dispersion, and disorder configuration. In the model we study, the anisotropy stems from the interplay between Dirac and Schrödinger features combined in a special two-band Hamiltonian describing the quasiparticles similar to the low-energy excitations in phosphorene. As a result, even scalar isotropic disorder scattering alters the nature of the carriers and results in anisotropic transport. Solving the Boltzmann equation exactly for such carriers with point-like random impurities we find a hidden knob to control the anisotropy just by tuning either the Fermi energy or temperature. Our results are expected to be generally applicable beyond the model studied here, and should stimulate further search for the alternative ways to control electron transport in advanced materials.

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arXiv2019

Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures

Van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next generation spintronic devices. When layered with non-magnetic vdW materials, such as graphene and/or topological insulators, vdW heterostructures can be assembled (with no requirement for lattice matching) to provide otherwise unattainable device structures and functionalities. We report a hitherto rarely seen antisymmetric magnetoresistance (MR) effect in van der Waals heterostructured Fe3GeTe2/graphite/Fe3GeTe2 devices. Unlike conventional giant magnetoresistance (GMR) which is characterized by two resistance states, the MR in these vdW heterostructures features distinct high, intermediate and low resistance states. This unique characteristic is suggestive of underlying physical mechanisms that differ from those observed before. After theoretical calculations, the three resistance behavior was attributed to a spin momentum locking induced spin polarized current at the graphite/FGT interface. Our work reveals that ferromagnetic heterostructures assembled from vdW materials can exhibit substantially different properties to those exhibited by similar heterostructures grown in vacuum. Hence, it highlights the potential for new physics and new spintronic applications to be discovered using vdW heterostructures.

cond-mat.mes-hall↗

arXiv2019

Sign change in the anomalous Hall effect and strong transport effects in a 2D massive Dirac metal due to spin-charge correlated disorder

The anomalous Hall effect (AHE) is highly sensitive to disorder in the metallic phase. Here we show that statistical correlations between the charge and spin disorder sectors strongly affect both the longitudinal conductivity and the sign/magnitude of AHE. Correlations between mass and charge disorder can be absorbed into an effective mass. In general, random gauge fields are also present due to e.g. in-plane component of magnetization in topological insulator, causing an anisotropy in conductivity. As the correlation between the charge and gauge-mass components increases, so does the AHE, achieving its universal value, and even exceed it, although the system is an impure metal. The AHE can change sign when the anti-correlations reverse the effective mass, a possible mechanism behind the sign change seen in recent experiments.

cond-mat.dis-nn↗

arXiv2019

Controlling spin-orbit interactions in silicon quantum dots using magnetic field direction

Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction which degrade the performance of the qubits or, when understood and controlled, could be used as a powerful resource. To understand how to control this interaction we build a detailed profile of the spin-orbit interaction of a silicon metal-oxide-semiconductor double quantum dot system. We probe the derivative of the Stark shift, $g$-factor and $g$-factor difference for two single-electron quantum dot qubits as a function of external magnetic field and find that they are dominated by spin-orbit interactions originating from the vector potential, consistent with recent theoretical predictions. Conversely, by populating the double dot with two electrons we probe the mixing of singlet and spin-polarized triplet states during electron tunneling, which we conclude is dominated by momentum-term spin-orbit interactions that varies from 1.85 MHz up to 27.5 MHz depending on the magnetic field orientation. Finally, we exploit the tunability of the derivative of the Stark shift of one of the dots to reduce its sensitivity to electric noise and observe an 80 % increase in $T_2^*$. We conclude that the tuning of the spin-orbit interaction will be crucial for scalable quantum computing in silicon and that the optimal setting will depend on the exact mode of qubit operations used.

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arXiv2018

Electrical control of the Zeeman spin splitting in two-dimensional hole systems

Semiconductor holes with strong spin-orbit coupling allow all-electrical spin control, with broad applications ranging from spintronics to quantum computation. Using a two-dimensional hole system in a GaAs quantum well, we demonstrate a new mechanism of electrically controlling the Zeeman splitting, which is achieved through altering the hole wave vector $k$. We find a threefold enhancement of the in-plane $g-$factor $g_{\parallel}(k)$. We introduce a new method for quantifying the Zeeman splitting from magnetoresistance measurements, since the conventional tilted field approach fails for two-dimensional systems with strong spin-orbit coupling. Finally, we show that the Rashba spin-orbit interaction suppresses the in-plane Zeeman interaction at low magnetic fields. The ability to control the Zeeman splitting with electric fields opens up new possibilities for future quantum spin-based devices, manipulating non-Abelian geometric phases, and realising Majorana systems in $p-$type superconductor systems.

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arXiv2017

Entanglement control and magic angles for acceptor qubits in Si

Full electrical control of quantum bits could enable fast, low-power, scalable quantum computation. Although electric dipoles are highly attractive to couple spin qubits electrically over long distances, mechanisms identified to control two-qubit couplings do not permit single-qubit operations while two-qubit couplings are off. Here we identify a mechanism to modulate electrical coupling of spin qubits that overcomes this drawback for hole spin qubits in acceptors,that is based on the electrical tuning of the direction of the spin-dependent electric dipole by a gate. In this way, inter-qubit coupling can be turned off electrically by tuning to a "magic angle" of vanishing electric dipole-dipole interactions, while retaining the ability to manipulate the individual qubits. This effect stems from the interplay of the $\rm T_d$ symmetry of the acceptor state in the Si lattice with the magnetic field orientation, and the spin-3/2 characteristic of hole systems. Magnetic field direction also allows to greatly suppress spin relaxation by phonons that limit single qubit performance, while retaining sweet spots where the qubits are insensitive to charge noise. Our findings can be directly applied to state-of-the-art acceptor based architectures, for which we propose suitable protocols to practically achieve full electrical tunability of entanglement and the realization of a decoherence-free subspace.

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arXiv2017

Quantum Kinetic Theory of the Chiral Anomaly

We present a general quantum kinetic theory of low-field magnetotransport in weakly disordered crystals that accounts fully for the interplay between electric-field induced interband coherence, Bloch-state scattering, and an external magnetic field. The quantum kinetic equation we derive for the Bloch-state density matrix naturally incorporates the momentum-space Berry phase effects whose influence on Bloch-state wavepacket dynamics is normally incorporated into transport theory in an ad hoc manner. The Berry phase correction to the momentum-space density of states in the presence of an external magnetic field implied by semiclassical wavepacket dynamics is captured by our theory as an intrinsic density-matrix response to a magnetic field. We propose a simple and general procedure for expanding the linear response of the Bloch-state density matrix to an electric field in powers of magnetic field. As an illustration, we apply our theory to magnetotransport in Weyl semimetals. We show that the chiral anomaly (positive magnetoconductivity quadratic in magnetic field) that appears when separate Fermi surface pockets surround distinct Weyl points survives only when intervalley scattering is very weak compared to intravalley scattering.

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arXiv2017

Coulomb drag in topological materials

Dirac fermions are at the forefront of modern condensed matter physics research. They are known to occur in materials as diverse as graphene, topological insulators, and transition metal dichalcogenides, while closely related Weyl fermions have been discovered in other materials. They have been predicted to lend themselves to a variety of technological applications, while the recent prediction and discovery of the quantized anomalous Hall effect of massive Dirac fermions is regarded as a potential gateway towards low-energy electronics. Some materials hosting Dirac fermions are natural platforms for interlayer coherence effects such as Coulomb drag and exciton condensation. The top and bottom surfaces of a thin topological insulator film provide such a prototype system. Here we describe recent insights into Coulomb drag between two layers of Dirac fermions relying primarily on topological insulator films as a minimal model. We consider both non-magnetic topological insulators, hosting massless Dirac fermions, and magnetic topological insulators, in which the fermions are massive. We discuss in general terms the dynamics of the thin-film spin density matrix, outlining numerical results and approximate analytical expressions where appropriate for the drag resistivity \r{ho}D at low temperatures and low electron densities. In magnetic topological insulators with out-of-plane magnetizations in both the active and passive layers we analyze the role of the anomalous Hall effect in Coulomb drag.

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arXiv2017

Strong influence of spin-orbit coupling on magnetotransport in two-dimensional hole systems

With a view to electrical spin manipulation and quantum computing applications, recent significant attention has been devoted to semiconductor hole systems, which have very strong spin-orbit interactions. However, experimentally measuring, identifying, and quantifying spin-orbit coupling effects in transport, such as electrically-induced spin polarizations and spin-Hall currents, are challenging. Here we show that the magnetotransport properties of two dimensional (2D) hole systems display strong signatures of the spin-orbit interaction. Specifically, the low-magnetic field Hall coefficient and longitudinal conductivity contain a contribution that is second order in the spin-orbit interaction coefficient and is non-linear in the carrier number density. We propose an appropriate experimental setup to probe these spin-orbit dependent magnetotransport properties, which will permit one to extract the spin-orbit coefficient directly from the magnetotransport.

cond-mat.mes-hall↗

arXiv2017

Weak Localization and Antilocalization in Topological Materials with Impurity Spin-Orbit Interactions

Topological materials have attracted considerable experimental and theoretical attention. They exhibit strong spin-orbit coupling both in the band structure (intrinsic) and in the impurity potentials (extrinsic), although the latter is often neglected. Here we discuss weak localization and antilocalization of massless Dirac fermions in topological insulators and massive Dirac fermions in Weyl semimetal thin films taking into account both intrinsic and extrinsic spin-orbit interactions. The physics is governed by the complex interplay of the chiral spin texture, quasiparticle mass, and scalar and spin-orbit scattering. We demonstrate that terms linear in the extrinsic spin-orbit scattering are generally present in the Bloch and momentum relaxation times in all topological materials, and the correction to the diffusion constant is linear in the strength of the extrinsic spin-orbit. In TIs, which have zero quasiparticle mass, the terms linear in the impurity spin-orbit coupling lead to an observable density dependence in the weak antilocalization correction. They produce substantial qualitative modifications to the magnetoconductivity, differing greatly from the conventional HLN formula traditionally used in experimental fits, which predicts a crossover from weak localization to antilocalization as a function of the extrinsic spin-orbit strength. In contrast, our analysis reveals that topological insulators always exhibit weak antilocalization. In WSM thin films having intermediate to large values of the quasiparticle mass extrinsic spin-orbit scattering strongly affects the boundary of the weak localization to antilocalization transition. We produce a complete phase diagram for this transition as a function of the mass and spin-orbit scattering strength. We discuss implications for experiments and provide a brief comparison with transition metal dichalcogenides.

cond-mat.mes-hall↗

arXiv2017

A generalized Stoner criterion and versatile spin ordering in two-dimensional spin-orbit coupled electron systems

Spin-orbit coupling is a single-particle phenomenon known to generate topological order, and electron-electron interactions cause ordered many-body phases to exist. The rich interplay of these two mechanisms is present in a broad range of materials, and has been the subject of considerable ongoing research and controversy. Here we demonstrate that interacting two-dimensional electron systems with strong spin-orbit coupling exhibit a variety of time reversal symmetry breaking phases with unconventional spin alignment. We first prove that a Stoner-type criterion can be formulated for the spin polarization response to an electric field, which predicts that the spin polarization susceptibility diverges at a certain value of the electron-electron interaction strength. The divergence indicates the possibility of unconventional ferromagnetic phases even in the absence of any applied electric or magnetic field. This leads us, in the second part of this work, to study interacting Rashba spin-orbit coupled semiconductors in equilibrium in the Hartree-Fock approximation as a generic minimal model. Using classical Monte-Carlo simulations we construct the complete phase diagram of the system as a function of density and spin-orbit coupling strength. It includes both an out-of-plane spin polarized phase and in-plane spin-polarized phases with shifted Fermi surfaces and rich spin textures, reminiscent of the Pomeranchuk instability, as well as two different Fermi-liquid phases having one and two Fermi surfaces, respectively, which are separated by a Lifshitz transition. We discuss possibilities for experimental observation and useful application of these novel phases, especially in the context of electric-field-controlled macroscopic spin polarizations.

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arXiv2017

Inter-band Coherence Response to Electric Fields in Crystals

In solid state conductors, linear response to a steady electric field is normally dominated by Bloch state occupation number changes that are correlated with group velocity and lead to a steady state current. However, for a number of important physical observables, the most important response even in conductors can be electric-field induced coherence between Bloch states in different bands, such as that responsible for screening in dielectrics. Examples include the anomalous and spin-Hall effects, spin torques, minimum conductivities and the chiral anomaly. In this paper we present a general quantum kinetic theory of linear response to an electric field which can be applied to solids with arbitrarily complicated band structures and includes the inter-band coherence response and the Bloch-state repopulation responses on an equal footing. We aim to enable extensive transport theory applications using computational packages based on maximally localized Wannier functions. The formalism is based on density-matrix equations of motion, on a Born approximation treatment of disorder, and on an expansion in scattering rate to leading non-trivial order. The quasiparticle bands are treated in a completely general manner that allows for arbitrary forms of the spin-orbit interaction and for the broken time reversal symmetry of magnetic conductors. We demonstrate that the inter-band response in conductors consists primarily of two terms: an intrinsic contribution due to the entire Fermi sea that captures the Berry curvature contribution to wave-packet dynamics, and an anomalous contribution caused by scattering that is sensitive to the presence of the Fermi surface. We solve for some electric-field response properties of simple model systems that are known to be dominated by interband coherence contributions and discuss an extensive list of complicated problems that cannot be solved analytically.

cond-mat.mes-hall↗

arXiv2017

Quantum Transport in Weyl Semimetal Thin Films in the Presence of Spin-Orbit Coupled Impurities

Topological semimetals have been at the forefront of experimental and theoretical attention in condensed matter physics. Among these, recently discovered Weyl semimetals have a dispersion described by a three-dimensional Dirac cone, which is at the root of exotic physics such as the chiral anomaly in magnetotransport. In a time reversal symmetric (TRS) Weyl semimetal film, the confinement gap gives the quasiparticles a mass, while TRS is preserved by having an even number of valleys with opposite masses. The film can be tuned through a topological phase transition by a gate electric field. In this work, we present a theoretical study of the quantum corrections to the conductivity of a topological semimetal thin film, which is governed by the complex interplay of the chiral band structure, mass term, and scalar and spin-orbit scattering. We study scalar and spin-orbit scattering mechanisms on the same footing, demonstrating that they have a strong qualitative and quantitative impact on the conductivity correction. We show that, due to the spin structure of the matrix Green's functions, terms linear in the extrinsic spin-orbit scattering are present in the Bloch and momentum relaxation times, whereas previous works had identified corrections starting from the second order. In the limit of small quasiparticle mass, the terms linear in the impurity spin-orbit coupling lead to a potentially observable density dependence in the weak antilocalization correction. Moreover, when the mass term is around 30 percent of the linear Dirac terms, the system is in the unitary symmetry class with zero quantum correction and switching the extrinsic spin-orbit scattering drives the system to the weak antilocalization. We discuss the crossover between the weak localization and weak antilocalization regimes in terms of the singlet and triplet Cooperon channels, tuning the spin-orbit scattering strength.

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arXiv2017

Valley Phase and Voltage Control of Coherent Manipulation in Si Quantum Dots

With any roughness at the interface of an indirect-bandgap semiconducting dot, the phase of the valley-orbit coupling can take on a random value. This random value, in double quantum dots, causes a large change in the exchange splitting. We demonstrate a simple analytical method to calculate the phase, and thus the exchange splitting and singlet-triplet qubit frequency, for an arbitrary interface. We then show that, with lateral control of the position of a quantum dot using a gate voltage, the valley-orbit phase can be controlled over a wide range, so that variations in the exchange splitting can be controlled for individual devices. Finally, we suggest experiments to measure the valley phase and the concomitant gate voltage control.

cond-mat.mes-hall↗

arXiv2017

Spin-orbit interactions in inversion-asymmetric 2D hole systems: a variational analysis

We present an in-depth study of the spin-orbit (SO) interactions occurring in inversion-asymmetric two-dimensional hole gases at semiconductor heterointerfaces. We focus on common semiconductors such as GaAs, InAs, InSb, Ge, and Si. We develop a semi-analytical variational method to quantify SO interactions, accounting for both structure inversion asymmetry (SIA) and bulk inversion asymmetry (BIA). Under certain circumstances, using the Schrieffer-Wolff (SW) transformation, the dispersion of the ground state heavy hole subbands can be written as $E(k) = A k^2 - B k^4 \pm C k^3$ where $A$, $B$, and $C$ are material- and structure-dependent coefficients. We provide a simple method of calculating the parameters $A$, $B$, and $C$, yet demonstrate that the simple SW approximation leading to a SIA (Rashba) spin splitting $\propto k^3$ frequently breaks down. We determine the parameter regimes at which this happens for the materials above and discuss a convenient semi-analytical method to obtain the correct spin splitting, effective masses, Fermi level, and subband occupancy, together with their dependence on the charge density, dopant type, and dopant concentration for both inversion and accumulation layers. Our results are in good agreement with fully numerical calculations as well as with experimental findings. They suggest that a naive application of the simple cubic Rashba model is of limited use in common heterostructures, as well as quantum dots. Finally, we find that for the single heterojunctions studied here the magnitudes of BIA terms are always much smaller than those of SIA terms.

cond-mat.mes-hall↗

arXiv2017

Charge-insensitive single-atom spin-orbit qubit in silicon

High fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglement via electric dipole-dipole interactions, microwave photons, or phonons. However, SOC exposes conventional spin qubits to decoherence from electrical noise. Here we propose an acceptor-based spin-orbit qubit in silicon offering long-range entanglement at a sweet spot where the qubit is protected from electrical noise. The qubit relies on quadrupolar SOC with the interface and gate potentials. As required for surface codes, $10^5$ electrically mediated single-qubit and $10^4$ dipole-dipole mediated two-qubit gates are possible in the predicted spin lifetime. Moreover, circuit quantum electrodynamics with single spins is feasible, including dispersive readout, cavity-mediated entanglement, and spin-photon entanglement. An industrially relevant silicon-based platform is employed.

cond-mat.mes-hall↗

arXiv2016

Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot

Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the weak hyperfine interaction and strong spin-orbit interaction. However, it has only recently become possible to make stable quantum dots in these systems, mainly due to difficulties in device fabrication and stability. Here we present electrical transport measurements on holes in a gate-defined double quantum dot in a $\mathrm{GaAs/Al_xGa_{1-x}As}$ heterostructure. We observe clear Pauli spin blockade and demonstrate that the lifting of this spin blockade by an external magnetic field is highly anisotropic. Numerical calculations of heavy-hole transport through a double quantum dot in the presence of strong spin-orbit coupling show quantitative agreement with experimental results and suggest that the observed anisotropy can be explained by both the anisotropic effective hole g-factor and the surface Dresselhaus spin-orbit interaction.

cond-mat.mes-hall↗

arXiv2016

An electrically driven spin qubit based on valley mixing

The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric fields provide an alternative mechanism for qubit control compared with magnetic fields and can also be easier to produce. Here we outline the mechanism for a drastic enhancement in the electrically-driven spin rotation frequency for silicon quantum dot qubits in the presence of a step at a hetero-interface. The enhancement is due to the strong coupling between the ground and excited states which occurs when the electron wave-function overcomes the potential barrier induced by the interface step. We theoretically calculate single qubit gate times of 170ns for a quantum dot confined at a silicon/silicon-dioxide interface. The engineering of such steps could be used to achieve fast electrical rotation and entanglement of spin qubits despite the weak spin-orbit coupling in silicon.

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