arXiv subjects

Dimitrie Culcer

Publications and source records attributed to Dimitrie Culcer.

At least 127 records · Page 7Linked to original sources

arXiv2011

Linear response theory of interacting topological insulators

Chiral surface states in topological insulators are robust against interactions, non-magnetic disorder and localization, yet topology does not yield protection in transport. This work presents a theory of interacting topological insulators in an external electric field, starting from the quantum Liouville equation for the many-body density matrix. Out of equilibrium, topological insulators acquire a current-induced spin polarization. Electron-electron interactions renormalize the non-equilibrium spin polarization and charge conductivity, and disorder in turn enhances this renormalization by a factor of two. Topological insulator phenomenology remains intact in the presence of interactions out of equilibrium, and an exact correspondence exists between the mathematical frameworks necessary for the understanding of the interacting and non-interacting problems.

cond-mat.mes-hall↗

arXiv2011

Transport in three-dimensional topological insulators: theory and experiment

This article reviews recent theoretical and experimental work on transport due to the surface states of three-dimensional topological insulators. The theoretical focus is on longitudinal transport in the presence of an electric field, including Boltzmann transport, quantum corrections and weak localization, as well as longitudinal and Hall transport in the presence of both electric and magnetic fields and/or magnetizations. Special attention is paid to transport at finite doping, to the $π$-Berry phase, which leads to the absence of backscattering, Klein tunneling and half-quantized Hall response. Signatures of surface states in ordinary transport and magnetotransport are clearly identified. The review also covers transport experiments of the past years, reviewing the initial obscuring of surface transport by bulk transport, and the way transport due to the surface states has increasingly been identified experimentally. Current and likely future experimental challenges are given prominence and the current status of the field is assessed.

cond-mat.mes-hall↗

arXiv2011

Anomalous Hall response of topological insulators

The anomalous Hall effect due to the surface conduction band of 3D topological insulators with an out-of-plane magnetization is \textit{always} dominated by an intrinsic topological term of the order of the conductivity quantum. We determine the contributions due to the band structure, skew scattering, side jump and magnetic impurities on the same footing, demonstrating that the topological term, renormalized due to disorder, overwhelms all other terms, providing an unmistakable signature of $Z_2$ topological order. Uncharacteristically, skew scattering contributes in the Born approximation as well as in the third order in the scattering potential, while in addition to the side-jump scattering term we identify a novel intrinsic side-jump term of a similar magnitude. These, however, never overwhelm the topological contribution.

cond-mat.mes-hall↗

arXiv2010

Interface roughness, valley-orbit coupling and valley manipulation in quantum dots

We present a systematic study of interface roughness and its effect on coherent dynamical processes in quantum dots. The potential due to a sharp, flat interface lifts the degeneracy of the lowest energy valleys and yields a set of valley eigenstates. Interface roughness is characterized by fluctuations in the location of the interface and in the magnitude of the potential step. Variations in the position of the interface, which are expected to occur on the length scale of the lattice constant, reduce the magnitude of the valley-orbit coupling. Variations in the size of the interface potential step alter the magnitude of the valley-orbit coupling and induce transitions between different valley eigenstates in dynamics involving two (or more) dots. Such transitions can be studied experimentally by manipulating the bias between two dots and can be detected by charge sensing. However, if the random variable characterizing the position of the interface is correlated over distances of the order of a quantum dot, which is unlikely but possible, the phase of the valley-orbit coupling may be different in adjacent dots. In this case tunneling between like and opposite valley eigenstates is in effect a random variable and cannot be controlled. We suggest a resonant tunneling experiment that can identify the matrix elements for tunneling between like and opposite valley eigenstates.

cond-mat.mes-hall↗

arXiv2010

Two-dimensional surface charge transport in topological insulators

We construct a theory of charge transport by the surface states of topological insulators in three dimensions. The focus is on the experimentally relevant case when the electron doping is such that the Fermi energy $ε_F$ and transport scattering time $τ$ satisfy $ε_F τ/\hbar \gg 1$, but sufficiently low that $ε_F$ lies below the bottom of the conduction band. Our theory is based on the spin density matrix and takes the quantum Liouville equation as its starting point. The scattering term is determined accurately to linear order in the impurity density. We consider scattering by charged impurities and short-range scatterers such as surface roughness. We calculate also the polarization function in topological insulators, emphasizing the differences from graphene. We find that the main contribution to the conductivity is $\propto n_i^{-1}$, where $n_i$ is the impurity density, and will have different carrier density dependencies for different forms of scattering. Two different contributions to this conductivity are traced to the scalar and spin-dependent terms in the Hamiltonian and their relative weight depends on the doping density. Our results contain all contributions to the conductivity to orders zero and one in the impurity density. We discuss also a way to determine the dominant scattering angles by studying the ratio of the transport relaxation time to the Bloch lifetime as a function of the Wigner-Seitz radius $r_s$. We also discuss the effect on the surface states of adding metallic contacts.

cond-mat.mes-hall↗

arXiv2010

Quantum dot spin qubits in Silicon: Multivalley physics

Research on Si quantum dot spin qubits is motivated by the long spin coherence times measured in Si, yet the orbital spectrum of Si dots is increased as a result of the valley degree of freedom. The valley degeneracy may be lifted by the interface potential, which gives rise to a valley-orbit coupling, but the latter depends on the detailed structure of the interface and is generally unknown a priori. These facts motivate us to provide an extensive study of spin qubits in Si double quantum dots, accounting fully for the valley degree of freedom and assuming no prior knowledge of the valley-orbit coupling. For single-spin qubits we analyze the spectrum of a multivalley double quantum dot, discuss the initialization of one qubit, identify the conditions for the lowest energy two-electron states to be a singlet and a triplet well separated from other states, and determine analytical expressions for the exchange splitting. For singlet-triplet qubits we analyze the single-dot spectrum and initialization process, the double-dot spectrum, singlet-triplet mixing in an inhomogeneous magnetic field and the peculiarities of spin blockade in multivalley qubits. We review briefly the hyperfine interaction in Si and discuss its role in spin blockade in natural Si, including intravalley and intervalley effects. We study the evolution of the double-dot spectrum as a function of magnetic field. We address briefly the situation in which the valley-orbit coupling is different in each dot due to interface roughness. We propose a new experiment for measuring the valley splitting in a single quantum dot. We discuss the possibility of devising other types of qubits in Si QDs, and the size of the intervaley coupling due to the Coulomb interaction.

cond-mat.mes-hall↗

arXiv2010

Exchange coupling in silicon quantum dots: Theoretical considerations for quantum computation

We study exchange coupling in Si double quantum dots, which have been proposed as suitable candidates for spin qubits due to their long spin coherence times. We discuss in detail two alternative schemes which have been proposed for implementing spin qubits in quantum dots. One scheme uses spin states in a single dot and the interdot exchange coupling controls interactions between unbiased dots. The other scheme employs the singlet and triplet states of a biased double dot as the two-level system making up the qubit and exchange controls the energy splitting of the levels. Exchange in these two configurations depends differently on system parameters. Our work relies on the Heitler-London approximation and the Hund-Mulliken molecular orbital method. The results we obtain enable us to investigate the sensitivity of the system to background charge fluctuations and determine the conditions under which optimal spots, at which the influence of the charge noise is minimized, may exist in Si double quantum dot structures.

cond-mat.mes-hall↗

arXiv2009

Realizing singlet-triplet qubits in multivalley Si quantum dots

There has been significant progress in the implementation and manipulation of singlet-triplet qubits in GaAs quantum dots. Given the considerably longer spin coherence times measured in Si, considerable interest has been generated recently in Si quantum dots. The physics of these systems is considerably more complex than the physics of GaAs quantum dots owing to the presence of the valley degree of freedom, which constitutes the focus of this work. In this paper we investigate the physics of Si quantum dots and focus on the feasibility of quantum coherent singlet-triplet qubit experiments analogous to those performed in GaAs. This additional degree of freedom greatly increases the complexity of the ground state and gives rise to highly nontrivial and interesting physics in the processes of qubit initialization, coherent manipulation and readout. We discuss the operational definition of a qubit in Si-based quantum dots. We find that in the presence of valley degeneracy a singlet-triplet qubit cannot be constructed, whereas for large valley splitting (>>k_B*T) the experiment is similar to GaAs. We show that experiments on singlet-triplet qubits analogous to those in GaAs would provide a method for estimating the valley coupling in Si. A Zeeman field distinguishes between different initialized states for any valley splitting and provides a tool to determine the size of this splitting.

cond-mat.mtrl-sci↗

arXiv2009

Side-jumps in the spin-Hall effect: construction of the Boltzmann collision integral

We present a systematic derivation of the side-jump contribution to the spin-Hall current in systems without band structure spin-orbit interactions, focusing on the construction of the collision integral for the Boltzmann equation. Starting from the quantum Liouville equation for the density operator we derive an equation describing the dynamics of the density matrix in the first Born approximation and to first order in the driving electric field. Elastic scattering requires conservation of the total energy, including the spin-orbit interaction energy with the electric field: this results in a first correction to the customary collision integral found in the Born approximation. A second correction is due to the change in the carrier position during collisions. It stems from the part of the density matrix off-diagonal in wave vector. The two corrections to the collision integral add up and are responsible for the total side-jump contribution to the spin-Hall current. The spin-orbit-induced correction to the velocity operator also contains terms diagonal and off-diagonal in momentum space, which together involve the total force acting on the system. This force is explicitly shown to vanish (on the average) in the steady state: thus the total contribution to the spin-Hall current due to the additional terms in the velocity operator is zero.

cond-mat.mes-hall↗

arXiv2009

Steady-state spin densities and currents

This article reviews steady-state spin densities and spin currents in materials with strong spin-orbit interactions. These phenomena are intimately related to spin precession due to spin-orbit coupling which has no equivalent in the steady state of charge distributions. The focus will be initially on effects originating from the band structure. In this case spin densities arise in an electric field because a component of each spin is conserved during precession. Spin currents arise because a component of each spin is continually precessing. These two phenomena are due to independent contributions to the steady-state density matrix, and scattering between the conserved and precessing spin distributions has important consequences for spin dynamics and spin-related effects in general. In the latter part of the article extrinsic effects such as skew scattering and side jump will be discussed, and it will be shown that these effects are also modified considerably by spin precession. Theoretical and experimental progress in all areas will be reviewed.

cond-mat.mes-hall↗

arXiv2009

Dephasing of Si spin qubits due to charge noise

Spin qubits in Silicon quantum dots can have long coherence times, yet their manipulation relies on the exchange interaction, through which charge noise can induce decoherence. Charge traps near the interface of a Si heterostructure lead to fluctuations in the quantum-dot confinement and barrier potentials, which cause gating errors and two-spin dephasing. We quantify these effects in Si double quantum dots using a realistic model of noise. Specifically, we consider both random telegraph noise from a few traps (good for dots grown on submicron wafers) and 1/f noise from many traps (good for larger wafers appropriate for quantum dot arrays). We give estimates of gate errors for single-spin qubit architectures and dephasing in singlet-triplet qubits.

cond-mat.mes-hall↗

arXiv2009

Semiclassical spin transport in spin-orbit-coupled systems

This article discusses spin transport in systems with spin-orbit interactions and how it can be understood in a semiclassical picture. I will first present a semiclassical wave-packet description of spin transport, which explains how the microscopic motion of carriers gives rise to a spin current. Due to spin non-conservation the definition of the spin current has some arbitrariness. In the second part I will briefly review the physics from a density matrix point of view, which makes clear the relationship between spin transport and spin precession and the important role of scattering.

cond-mat.mes-hall↗

arXiv2009

Current-induced spin torques in III-V ferromagnetic semiconductors

We formulate a theory of current-induced spin torques in inhomogeneous III-V ferromagnetic semiconductors. The carrier spin-3/2 and large spin-orbit interaction, leading to spin non-conservation, introduce significant conceptual differences from spin torques in ferromagnetic metals. We determine the spin density in an electric field in the weak momentum scattering regime, demonstrating that the torque on the magnetization is intimately related to spin precession under the action of both the spin-orbit interaction and the exchange field characteristic of ferromagnetism. The spin polarization excited by the electric field is smaller than in ferromagnetic metals and, due to lack of angular momentum conservation, cannot be expressed in a simple closed vectorial form. Remarkably, scalar and spin-dependent scattering do not affect the result. We use our results to estimate the velocity of current-driven domain walls.

cond-mat.other↗

arXiv2009

External gates and transport in biased bilayer graphene

We formulate a theory of transport in graphene bilayers in the weak momentum scattering regime in such a way as to take into account contributions to the electrical conductivity to leading and next-to-leading order in the scattering potential. The response of bilayers to an electric field cannot be regarded as a sum of terms due to individual layers. Rather, interlayer tunneling and coherence between positive- and negative-energy states give the main contributions to the conductivity. At low energies, the dominant effect of scattering on transport comes from scattering within each energy band, yet a simple picture encapsulating the role of collisions in a set of scattering times is not applicable. Coherence between positive- and negative-energy states gives, as in monolayers, a term in the conductivity which depends on the order of limits. The application of an external gate, which introduces a gap between positive- and negative-energy states, does not affect transport. Nevertheless the solution to the kinetic equation in the presence of such a gate is very revealing for transport in both bilayers and monolayers.

cond-mat.mes-hall↗

arXiv2008

Spin Orientation of Holes in Quantum Wells

This paper reviews the spin orientation of spin-3/2 holes in quantum wells. We discuss the Zeeman and Rashba spin splitting in hole systems that are qualitatively different from their counterparts in electron systems. We show how a systematic understanding of the unusual spin-dependent phenomena in hole systems can be gained using a multipole expansion of the spin density matrix. As an example we discuss spin precession in hole systems that can give rise to an alternating spin polarization. Finally, we discuss the qualitatively different regimes of hole spin polarization decay in clean and dirty samples.

cond-mat.mes-hall↗

arXiv2008

Weak momentum scattering and the conductivity of graphene

Electrical transport in graphene offers a fascinating parallel to spin transport in semiconductors including the spin-Hall effect. In the weak momentum scattering regime the steady-state density matrix contains two contributions, one linear in the carrier number density $n$ and characteristic scattering time $τ$, the other independent of either. In this paper we take the Liouville equation as our starting point and demonstrate that these two contributions can be identified with pseudospin conservation and non-conservation respectively, and are connected in a non-trivial manner by scattering processes. The scattering term has a distinct form, which is peculiar to graphene and has important consequences in transport. The contribution linear in $τ$ is analogous to the part of the spin density matrix which yields a steady state spin density, while the contribution independent of $τ$, is analogous to the part of the spin density matrix which yields a steady state spin current. Unlike in systems with spin-orbit interactions, the $n$ and $τ$-independent part of the conductivity is reinforced in the weak momentum scattering regime by scattering between the conserved and non-conserved pseudospin distributions.

cond-mat.mes-hall↗

arXiv2007

On the nature of steady states of spin distributions in the presence of spin-orbit interactions

In the presence of spin-orbit interactions, the steady state established for spin distributions in an electric field is qualitatively different from the steady state for charge distributions. This is primarily because the steady state established for spin distributions involves spin precession due to spin-orbit coupling. We demonstrate in this work that the spin density matrix in an external electric field acquires two corrections with different dependencies on the characteristic momentum scattering time. One part is associated with conserved spins, diverges in the clean limit and is responsible for the establishment of a steady-state spin density in electric fields. Another part is associated with precessing spins, is finite in the clean limit and is responsible for the establishment of spin currents in electric fields. Scattering between these distributions has important consequences for spin dynamics and spin-related effects in general, and explains some recent puzzling observations, which are captured by our unified theory.

cond-mat.mes-hall↗

arXiv2007

Spin polarization decay in spin-1/2 and spin-3/2 systems

We present a general unifying theory for spin polarization decay due to the interplay of spin precession and momentum scattering that is applicable to both spin-1/2 electrons and spin-3/2 holes. Our theory allows us to identify and characterize a wide range of qualitatively different regimes. For strong momentum scattering or slow spin precession we recover the D'yakonov-Perel result, according to which the spin relaxation time is inversely proportional to the momentum relaxation time. On the other hand, we find that, in the ballistic regime the carrier spin polarization shows a very different qualitative behavior. In systems with isotropic spin splitting the spin polarization can oscillate indefinitely, while in systems with anisotropic spin splitting the spin polarization is reduced by spin dephasing, which is non-exponential and may result in an incomplete decay of the spin polarization. For weak momentum scattering or fast spin precession, the oscillations or non-exponential spin dephasing are modulated by an exponential envelope proportional to the momentum relaxation time. Nevertheless, even in this case in certain systems a fraction of the spin polarization may survive at long times. Finally it is shown that, despite the qualitatively different nature of spin precession in the valence band, spin polarization decay in spin-3/2 hole systems has many similarities to its counterpart in spin-1/2 electron systems.

cond-mat.mes-hall↗