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Dimitris Tsikritzis

Publications and source records attributed to Dimitris Tsikritzis.

4 recordsLinked to original sources

Bandgap Engineering for Efficient Perovskite Solar Cells Under Multiple Color Temperature Indoor Lighting

Perovskite indoor photovoltaics (PIPVs) are emerging as a transformative technology for low-light intensity energy harvesting, owing to their high power conversion efficiencies (PCEs), low-cost fabrication, solution-processability, and compositionally tunable band gaps. In this work, methylammonium-free perovskite absorbers were compositionally engineered to achieve band gaps of 1.55, 1.72, and 1.88 eV, enabling matching the spectral photoresponse with the indoor lighting. Devices based on a scalable mesoscopic n-i-p architecture were systematically evaluated under white LED illumination across correlated color temperatures (3000-5500 K) and light intensities from 250 to 1000 lux with active area of 1 cm2. The 1.72 eV composition exhibited the most promising performance across different light intensities and colors, achieving PCEs of 35.04 % at 1000 lux and 36.6 % at 250 lux, with a stable device operation of over 2000 hours. On the other hand, the 1.88 eV band-gap variant reached a peak PCE of 37.4 % under 250 lux (5500 K), however performance trade-offs were observed across the different color lights LEDs. Our combined experimental and theoretical optical-electrical simulations suggest that decreasing trap-assisted recombination in wide-bandgap compositions may further improve PIPV performance across the different illumination conditions. In contrast, devices with 1.55 eV band gap underperformed in such conditions due to suboptimal spectral overlap and utilization. These findings establish bandgap optimization and device architecture as key design principles for high-efficiency, stable PIPVs, advancing their integration into self-powered electronic systems and innovative indoor environments.

cond-mat.mtrl-sci

Enhanced Photovoltaic Performance of Perovskite Solar Cells by Co-Doped Spinel Nickel Cobaltite Hole Transporting Layer

Solution combustion synthesized hole transport layer of co-doped spinel nickel cobaltite were fabricated using doctor-blading technique for planar inverted perovskite solar cells. Perovskite solar cells incorporating Co-doped spinel nickel cobaltite shown an increase in device performance parameters compared to un-doped spinel nickel cobaltite, leading to PCE of 16.5%. X-ray photoelectron spectroscopy measurements revealed the tendency of Cu cations to replace preferably the surface Ni atoms changing the surface stoichiometry of spinel nickel cobaltite inducing a cathodic polarization. Ultraviolet photoelectron spectroscopy measurements unveiled the increase of the ionization potential by 0.1 eV for co-doped spinel nickel cobaltite film compare to undoped spinel nickel cobaltite-based hole transporting layer. We attribute the enhanced PCE of inverted perovskite solar cells presented due to improved hole extraction properties of co-doped spinel nickel cobaltite hole transporting layer.

physics.app-ph

Inverted Perovskite Photovoltaics using Flame Spray Pyrolysis Solution based CuAlO2/Cu-O Hole Selective Contact

We present the functionalization process of a conductive and transparent copper aluminum oxide, copper oxide alloy. The copper aluminum oxide, copper oxide powders were developed by flame spray pyrolysis and their stabilized dispersions were treated by sonication and centrifugation methods. We show that when the supernatant part of the treated copper aluminum oxide, copper oxide dispersions is used for the development of hole transporting layers the corresponding inverted perovskite solar cells show improved functionality and power conversion efficiency with negligible hysteresis effect.

physics.app-ph

Room Temperature Nanoparticulate Interfacial Layers for Perovskite Solar Cells via solvothermal synthesis

We present a solvothermal synthetic route to produce monodispersed CuO nanoparticles (NPs) in the range of 5-10 nm that can be used as hole selective interfacial layer between indium tin oxide (ITO) and perovskite active layer for p-i-n perovskite solar cells by a spin casting the dispersions at room temperature. The bottom electrode interface modification provided by spherical CuO-NPs at room temperature promotes the formation of high quality perovskite photoactive layers with large crystal size and strong optical absorption. Furthermore, it is shown that the nanoparticulate nature of the CuO hole transporting interfacial layer can be used to improve light manipulation within perovskite solar cell device structure. The corresponding p-i-n CH3NH3PbI3-based solar cells show high Voc values of 1.09 V, which is significantly higher compared to the Voc values obtained with conventional PEDOT:PSS hole selective contact based perovskite solar cells.

physics.app-ph