arXiv subjects

Dinesh Baral

Publications and source records attributed to Dinesh Baral.

3 recordsLinked to original sources

arXiv2025

Neutralizing Optical Defects in GeSn

Reports of photoluminescence from GeSn grown on Ge substrates by molecular beam epitaxy have been limited. We find that one limiting factor to observing photoluminescence is due to localized defect states marked by photoluminescence at 2400 nm and originating from the Ge substrate and buffer layer. In this study, we report on an optical study utilizing doped Ge(001) substrates to effectively suppress defect-related photoluminescence in GeSn layers by filling localized defect trap states. For this experiment, a GeSn layer with Sn content up to 10.5% was grown on a doped Ge(001) substrate. Analysis of the physics of the photoluminescence spectrum collected from the GeSn thin film shows an emission at the expected wavelength of 2300 nm for 10.5% Sn content and the absence of the typically observed defect related signal at 2400 nm. This understanding is further confirmed using short pulse optical excitation of the GeSn grown on undoped Ge substrates.

cond-mat.mtrl-sci↗

arXiv2025

Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth

Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology, tunable band structure, and potential for a direct bandgap at high Sn concentrations. However, synthesizing Sn-rich GeSn structures remains challenging due to the low solid solubility of Sn in Ge (less than 1%) and the substantial lattice mismatch ( about 14%) between Sn and Ge. In this work, we demonstrate the successful growth of high-quality, relaxed GeSn layers with Sn contents of 9.2% and 11.4% on Si(100) substrates via molecular beam epitaxy (MBE). As far as we know, this is the first report of direct bandgap photoluminescence observed from MBE-grown GeSn films without post-growth annealing. Structural characterizations including X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), and transmission electron microscopy (TEM) confirm uniform Sn incorporation with minimal defect formation. Atomic force microscopy (AFM) reveals smooth surfaces with low roughness. Temperature-dependent photoluminescence (PL) measurements further confirm direct bandgap emission, representing a new stage in the development of MBE-grown GeSn.

physics.app-ph↗

arXiv2020

Small Energy Gap Revealed in CrBr3 by Scanning Tunneling Spectroscopy

CrBr$_{3}$ is a layered van der Waals material with magnetic ordering down to the 2D limit. For decades, based on optical measurements, it is believed that the energy gap of CrBr$_{3}$ is in the range of 1.68-2.1 eV. However, controversial results have indicated that the band gap of CrBr$_{3}$ is possibly smaller than that. An unambiguous determination of the energy gap is critical to the correct interpretations of the experimental results of CrBr$_{3}$. Here, we present the scanning tunneling microscopy and spectroscopy (STM/S) results of CrBr$_{3}$ thin and thick flakes exfoliated onto pyropytic graphite (HOPG) surfaces and density functional theory (DFT) calculations to reveal the small energy gap (peak-to-peak energy gap to be 0.57 eV $\pm$ 0.04 eV; or the onset signal energy gap to be 0.29 $\pm$ 0.05 eV from dI/dV spectra). Atomic resolution topography images show the defect-free crystal structure and the dI/dV spectra exhibit multiple peak features measured at 77 K. The conduction band - valence band peak pairs in the multi-peak dI/dV spectrum agree very well with all reported optical transitions. STM topography images of mono- and bi-layer CrBr$_{3}$ flakes exhibit edge degradation due to short air exposure (~15 min) during sample transfer. The unambiguously determined small energy gap settles the controversy and is the key in better understanding CrBr$_{3}$ and similar materials.

cond-mat.mtrl-sci↗