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Dinesh K. Pandya

Publications and source records attributed to Dinesh K. Pandya.

2 recordsLinked to original sources

Giant spin-orbit torque efficiency in all-epitaxial heterostructures

A large anti-damping spin-obit torque (SOT) efficiency in magnetic heterostructures is a prerequisite to realize energy efficient spin torque based magnetic memories and logic devices. The efficiency can be characterized in terms of the spin-orbit fields generated by anti-damping torques when an electric current is passed through the non-magnetic layer. We report a giant spin-orbit field of 48.96 (27.50) mT at an applied current density of 1 MAcm-2 in beta-W interfaced Co60Fe40 (Ni81Fe19)/TiN epitaxial structures due to an anti-damping like torque, which results in a magnetization auto-oscillation current density as low as 1.68(3.27) MAcm-2. The spin-orbit field value increases with decrease of beta-W layer thickness, which affirms that epitaxial surface states are responsible for the extraordinary large efficiency. SOT induced energy efficient in-plane magnetization switching in large 20x100 um2 structures has been demonstrated by Kerr microscopy and the findings are supported by results from micromagnetic simulations. The observed giant SOT efficiencies in the studied all-epitaxial heterostructures are comparable to values reported for topological insulators. These results confirm that by utilizing epitaxial material combinations an extraordinary large SOT efficiency can be achieved using semiconducting industry compatible 5d heavy metals, which provides immediate solutions for the realization of energy efficient spin-logic devices.

cond-mat.mtrl-sci

Extraordinary efficient spin-orbit torque switching in (W, Ta)/epitaxial-Co60Fe40/TiN heterostructures

The giant spin Hall effect in magnetic heterostructures along with low spin memory loss and high interfacial spin mixing conductance are prerequisites to realize energy efficient spin torque based logic devices. We report giant spin Hall angle (SHA) of 28.67 (5.09) for W (Ta) interfaced epi- Co60Fe40/TiN structures. The spin-orbit torque switching current density (J_Crit) is as low as 1.82 (8.21) MA/cm2 in W (Ta)/Co60Fe40(t_CoFe)/TiN structures whose origin lies in the epitaxial interfaces. These structures also exhibit very low spin memory loss and high spin mixing conductance. These extraordinary values of SHA and therefore ultra-low J_Crit in semiconducting industry compatible epitaxial materials combinations open up a new direction for the realization of energy efficient spin logic devices by utilizing epitaxial interfaces.

cond-mat.mtrl-sci