Design and numerical performance analysis of efficient Ag3TaX4 (X = S, Se, Te) thin film solar cells
Silver-based ternary chalcogenides have recently emerged as promising absorber materials for thin film photovoltaics. Nevertheless, their photovoltaic performance in complete device architectures has not yet been systematically explored. In this work, three-dimensional (3D) n-CdS/p-Ag3TaX4 (X = S, Se, Te)/p+-GeS thin-film solar cells have been designed and numerically investigated using the Semiconductor Module of COMSOL Multiphysics. Herein, the various performance matrices of the proposed devices have been analysed in accordance with the changing of depth, carrier, and defect concentration in each layer of the structures. The optimized Ag3TaS4-based device delivers a power conversion efficiency, PCE of 24.66%, open circuit voltage, VOC of 1.4V, short circuit current density, JSC of 20.68 mA/cm2, and fill factor, FF of 85.16%. The Ag3TaSe4-based solar cell exhibits the PCE of 28.1% with VOC = 1.19V, JSC = 27.0 mA/cm2, and FF = 87.44%. The Ag3TaTe4 solar device shows a PCE of 27.56% with a VOC of 0.88 V, JSC of 36.14 mA/cm2, fill factor of 86.65%. These results provide a deeper insight into device operation and offer practical design guidelines for fabricating efficient Ag3TaX4 (X = S, Se, T e)-based novel next-generation solar cells.