arXiv subjects

Ding-Fu Shao

Publications and source records attributed to Ding-Fu Shao.

At least 19 recordsLinked to original sources

arXiv2026

A Unified Symmetry Framework For In-plane Anomalous Hall effect

The in-plane anomalous Hall effect (IPAHE), driven by an in-plane net magnetization or an applied magnetic field, challenges the conventional anomalous Hall paradigm. Despite growing interest, a unified symmetry principle governing these phenomena has remained elusive. Here, we establish a comprehensive symmetry framework that bridges the spin space group, which dictates the magnetic geometry, with the magnetic space group, which governs the anomalous Hall response. We show that spontaneous IPAHE can emerge in ferromagnets when spin-orbit-coupling-induced spin-group symmetry breaking permits additional net magnetization directions. For field-induced IPAHE, we analyze how an applied magnetic field reduces the symmetries of all 122 magnetic point groups and identify 54 groups that support IPAHE. Our framework naturally predicts IPAHE in a broad class of unconventional magnets, including altermagnets and odd-parity magnets. In particular, symmetry analysis reveals characteristic one-, two-, or three-fold angular harmonics of the Hall conductance under an in-plane rotating field, providing a symmetry-resolved fingerprint for unconventional magnetism. Using this framework, we screen the MAGNDATA database and identify candidate materials supporting spontaneous or field-induced IPAHE, encompassing ferromagnets, antiferromagnets, and unconventional magnets. Finally, we validate the symmetry predictions through first-principles calculations for two representative materials.

cond-mat.mtrl-sci↗

arXiv2026

Interfacial Noncollinear Filtering of Spin Hall Currents

Spin Hall currents generated in nonmagnetic materials are conventionally regarded as bulk responses whose polarization is fixed by crystal symmetry. This view has motivated the search for intrinsically low-symmetry spin sources when unconventional spin polarizations are required. Here we point out that, in realistic heterostructures, the device-relevant quantity is not the fully symmetry-averaged bulk spin Hall current, but the emitted spin current transmitted across the interface. We therefore establish emitted spin currents as bulk-interface hybrid responses and propose interfacial noncollinear filtering as a mechanism to bypass the bulk-symmetry constraint. A low-symmetry interfacial spin-orbit field, generally noncollinear with the momentum-resolved spin polarization of the incident spin Hall current, imposes spin-dependent transmission and converts hidden momentum-resolved spin-polarization components into an observable unconventional emitted spin current. Using both a rotationally symmetric minimal model and a realistic high-symmetry Dirac-semimetal model, we show that conventional spin Hall sources can emit sizable out-of-plane spin currents when their hidden bulk spin Hall textures are selectively transmitted by the interfacial spin-orbit field. Our results reveal that spin-current polarization emerges from the cooperative action of bulk and interfacial responses, providing a strategy for reprogramming spin-current polarization in high-efficiency, CMOS-compatible spin Hall materials without relying on intrinsically low-symmetry bulk crystals or external symmetry-breaking schemes.

cond-mat.mes-hall↗

arXiv2026

Atom-selective spin-polarized transport in a charge-ordered altermagnet

Altermagnets provide a promising platform for spin-polarized transport without net magnetization, but their transport properties are usually discussed in terms of momentum-space spin splitting. Here, using first-principles calculations and quantum transport simulations, we show that the charge-ordered altermagnet $\alpha$-Fe$_2$PO$_5$ exhibits a distinct form of real-space spin selectivity despite weak altermagnetic spin splitting near the Fermi level. The charge order creates inequivalent Fe$^{2+}$ and Fe$^{3+}$ sites within each sublattice, while the puckered C-type antiferromagnetic stacking suppresses inter-sublattice transport. As a result, electron and hole doping activate spin-polarized transport predominantly through Fe$^{3+}$- and Fe$^{2+}$-based channels, respectively. These atom-selective channels carry opposite spin polarizations on the two antiferromagnetic sublattices, giving rise to a globally compensated charge current with hidden N\'eel spin character. We further propose an all-in-one $\alpha$-Fe$_2$PO$_5$ tunnel junction, where matching or mismatching atom-selective conduction channels yields orders-of-magnitude conductance modulation. Our findings establish a real-space design principle for atomically controlled spin functionality and spintronic devices.

cond-mat.mtrl-sci↗

arXiv2026

Spontaneous spin splitting and tunable valley polarization in a two-dimensional fully compensated ferrimagnet

Materials with controllable valley polarization and anomalous valley Hall (AVH) effect are highly desired in valleytronic applications. While current AVH studies primarily focus on ferromagnetic materials, two-dimensional (2D) antiferromagnets are more attractive for valleytronics since they possess zero net magnetization, negligible stray fields, and ultrafast spin dynamics. Nevertheless, the joint space-inversion and time-reversal ($PT$) symmetry in conventional collinear antiferromagnets prohibits the occurrence of AVH response. The recently proposed fully compensated ferrimagnets break $PT$ symmetry, and the spin-opposite sublattices are not related by crystal symmetry, providing a natural platform for the coexistence of spontaneous spin splitting, valley polarization, and anomalous-Hall compatible symmetry. Herein, we demonstrate that such compensated ferrimagnetism can be realized in a Janus Mn$_{2}$BrI monolayer, with a N\'{e}el temperature above room temperature. Spontaneous spin splitting is observed due to the built-in layer-dependent electrostatic potential. When SOC is considered, valley polarization emerges for an out-of-plane N\'{e}el vector. Moreover, proper hole doping stabilizes the perpendicular magnetic anisotropy and the two valleys exhibit markedly different Berry curvatures, thereby making AHE responses allowed. Furthermore, the valence band extrema of Mn$_{2}$BrI monolayer can be effectively tuned by external biaxial strain and giant piezomagnetism can be achieved. Our results identify Janus Mn$_{2}$BrI monolayer as a promising fully compensated ferrimagnetic platform for 2D valleytronics and spintronics.

cond-mat.mtrl-sci↗

arXiv2026

Antiferromagnetic pseudospintronics without spin splitting

Antiferromagnets (AFMs) are promising for high-density spintronics due to their zero net magnetization, yet conventional AFM spintronics relies on spin splitting-a requirement that excludes many collinear AFMs with compensated spin sublattices. Here we exploit the sublattice degree of freedom in a honeycomb AFM with zero spin splitting. We uncover a coupling between spin and sublattice: the out-of-plane pseudospin polarization is spin-dependent, a mechanism we term partial pseudospin-spin coupling. This allows switching of the pseudospin polarization by reversing the N\'eel vector. Introducing an impurity into a specific sublattice induces Friedel oscillations with a sublattice-resolved amplitude ratio dictated solely by the pseudospin polarization, which is directly measurable by spin-polarized scanning tunneling microscopy. Furthermore, we demonstrate N\'eel-vector-controlled transmission and a large nonvolatile tunneling magnetoresistance in an all-in-one AFM junction, with pronounced resonant enhancement in gate-tunable two-dimensional devices. Our work establishes a new paradigm-AFM pseudospintronics-that utilizes the sublattice pseudospin in zero-spin-splitting AFMs, extending spintronics beyond the conventional spin-splitting paradigm.

cond-mat.mes-hall↗

arXiv2026

Effects of Band Symmetry on Spin-Dependent Transport in Noncollinear Antiferromagnetic Tunnel Junctions

Antiferromagnetic tunnel junctions (AFMTJs) can exhibit large tunneling magnetoresistance (TMR), making them promising candidates for ultrafast and field-robust spintronic devices. Here, we elucidate the role of band symmetry in governing spin-dependent transport in AFMTJs. Using first-principles density-functional theory combined with quantum-transport calculations, we investigate Mn3NiN/LaAlO3/Mn3NiN (001) junctions based on the noncollinear $\Gamma_{4g}$ antiferromagnetic phase of Mn3NiN. Although Mn3NiN exhibits a large momentum-dependent spin polarization due to broken $PT$ symmetry, we show that the tunneling conductance is critically controlled by band symmetry of the electrode Bloch states and their symmetry-selective coupling to evanescent states in the LaAlO3 barrier. Orbital-symmetry selection rules suppress interband transmission in the parallel configuration, whereas the antiparallel configuration enables symmetry-compatible interband tunneling along the diagonal directions of the two-dimensional Brillouin zone. These additional transmission channels enhance the antiparallel conductance and reduce the TMR relative to predictions based solely on spin polarization. Nevertheless, the TMR remains exceptionally large, exceeding 2000%, while band symmetry controls the attainable magnitude of TMR in AFMTJs. Our results establish band-symmetry filtering as an essential ingredient of spin-dependent tunneling in AFMTJs.

cond-mat.mtrl-sci↗

arXiv2026

Unconventional Magnetism: Symmetry Classification, Hybrid-parity and Unconstrained-parity Classes

Unconventional magnetism has emerged as a transformative frontier in condensed matter physics. Such phases are characterized by substantial non-relativistic spin splitting (NSS) in symmetry-compensated magnets. They have been classified by the parity of their spin textures under momentum inversion, leading to the paradigms of altermagnets (even-parity) and odd-parity magnets. However, the full symmetry landscape remains largely unexplored. In this Letter, we present a systematic classification framework for unconventional magnetism based on the representation theory of the spin textures and the associated parity properties. Within this framework, we predict two previously unidentified classes beyond the established pure-parity categories: hybrid-parity magnets (HPMs) and unconstrained-parity magnets (UPMs), where the spin textures exhibit contrasting parities among their Cartesian components and the parity of the spin textures is ill-defined, respectively. We derive universal symmetry criteria that categorize HPMs into three distinct types. Importantly, by combining the spin splitting characteristics of altermagnets and odd-parity magnets, HPMs can enable the coexistence of the spin current and Edelstein effects. Taking FePO4 as an example, we perform first-principles calculations to demonstrate this coexistence. Finally, we discuss the potential applications of HPMs in spintronic devices. Our work provides a comprehensive symmetry classification of unconventional magnetism and establishes HPMs as a promising platform for multi-functional spintronics.

cond-mat.mtrl-sci↗

arXiv2026

Harnessing hidden quantum metric response in a 2D magnet via nonlocal photovoltaic effect

The quantum geometry of Bloch wavefunctions underpins a wealth of emergent phenomena in quantum materials. Its imaginary part, the Berry curvature, has long been recognized as a key source for hallmark effects such as quantum Hall and topological phenomena, etc. The real part of quantum geometry, the quantum metric, has recently garnered considerable attention due to predictions of a range of unconventional nonlinear and nonequilibrium responses. Such responses usually vanish in centrosymmetric systems, largely restricting relevant studies to non-centrosymmetric materials. Here we challenge this convention by revealing that the vanished quantum metric response can survive in a hidden form. Using a non-local photovoltaic scheme in a layered magnetic semiconductor, we spatially separate mutually compensating photocurrents and thereby detect such hidden quantum metric response. We demonstrate this effect across distinct magnetic states and down to the ultrathin limit. Moreover, we realize reconfigurable, nonvolatile and probabilistic photodetection enabled by the quantum metric response. These results not only fundamentally expand the material landscape for quantum geometric physics, but also open new gateway to harvest the quantum geometric contributions for state-of-the-art nonvolatile reprogrammable sensing and computing applications.

cond-mat.mes-hall↗

arXiv2026

Magnetoelastic Transport-Path Reconstruction and Giant Magnetotransport Responses in a Two-Dimensional Antiferromagnet

Nonvolatile magnetotransport responses in a single magnetic material have generally not been expected to exhibit a large ON/OFF ratio, because they are usually tied to spin-orbit coupling and therefore remain relatively weak. Here we show, contrary to this expectation, that giant nonvolatile magnetotransport can arise in a single magnetic material through magnetoelastic reconstruction of nonrelativistic real-space transport paths. Using the two-dimensional antiferromagnet FePS$_{3}$ as a representative system, first-principles quantum transport calculations reveal that charge transport is strongly tied to its quasi-one-dimensional zigzag sublattice chains and, under suitable doping, can even become confined to them. Moreover, strain lifts the degeneracy among symmetry-related zigzag variants and thus reorients these transport paths through magnetoelastic coupling. As a result, both the longitudinal and transverse conductivities change dramatically, yielding a giant magnetoelastic magnetoresistance of up to $10^{4}$% and an energy-independent Hall ratio that far exceeds the spontaneous Hall ratios found in conventional magnets. These results establish a route to exploiting symmetry-related magnetic variants and their associated transport paths for reconfigurable, high-performance spintronic devices with large nonvolatile readout contrast.

cond-mat.mtrl-sci↗

arXiv2025

Control of out-of-plane anti-damping spin torque with a canted ferromagnetic spin source

To achieve efficient anti-damping switching of nanoscale magnetic memories with perpendicular magnetic anisotropy using spin-orbit torque requires that the anti-damping spin-orbit torque have a strong out-of-plane component. The spin anomalous Hall effect and the planar Hall effect spin current produced by a ferromagnetic layer are candidate mechanisms for producing such an out-of-plane anti-damping torque, but both require that the magnetic moment of the spin source layer be canted partly out of the sample plane at zero applied magnetic field. Here we demonstrate such a canted configuration for a ferromagnetic SrRuO3 layer and we characterize all vector components of the torque that it produces, including non-zero out-of-plane anti-damping torques. We verify that the out-of-plane spin component can be tuned by the orientation of magnetic moment, with significant contributions from both the spin anomalous Hall effect and the planar Hall effect spin current.

cond-mat.mes-hall↗

arXiv2025

Sub-spin-flop switching of a fully compensated antiferromagnet by magnetic field

The control of antiferromagnets by magnetic fields represents a fundamental challenge in condensed matter physics, owing to their fully compensated magnetic order and vanishing net magnetization. Conventional methods rely on either uncompensated moments or high-field spin-flop transitions. Here, we demonstrate low-field switching in the fully compensated antiferromagnet CeNiAsO -- a material recently proposed as a candidate for $p$-wave magnetism. Using an in-plane magnetic field well below the spin-flop threshold, we selectively stabilize one of two degenerate antiferromagnetic domains with mutually orthogonal sublattice orientations. This field-induced domain selection allows reversible and nonvolatile switching of a giant in-plane resistivity anisotropy up to $\sim35\,\%$ -- a magnitude that far exceeds conventional anisotropy signals driven by spin-orbit coupling. The switching behavior persists across both the low-temperature noncollinear N\'{e}el phase and the higher-temperature collinear spin-density-wave phase, highlighting the universality of the domain-selection mechanism. Our work establishes a practical approach for manipulating compensated antiferromagnets with modest magnetic fields and underscores their potential for high-performance spintronic devices based on giant and switchable resistivity anisotropy.

cond-mat.mes-hall↗

arXiv2025

Floquet Spin Splitting and Spin Generation in Antiferromagnets

In antiferromagnetic spintronics, accessing the spin degree of freedom is essential for generating spin currents and manipulating magnetic order, which generally requires lifting spin degeneracy. This is typically achieved through relativistic spin-orbit coupling or non-relativistic spin splitting in altermagnets. Here, we propose an alternative approach: a dynamical spin splitting induced by an optical field in antiferromagnets. By coupling the driven system to a thermal bath, we demonstrate the emergence of steady-state pure spin currents, as well as linear-response longitudinal and transverse spin currents. Crucially, thermal bath engineering enables a nonrelativistic Edelstein effect--the generation of a net spin accumulation--without relying on spin-orbit coupling. Our results provide a broadly applicable and experimentally tunable route to control spins in antiferromagnets, offering new opportunities for spin generation and manipulation in antiferromagnetic spintronics.

cond-mat.mes-hall↗

arXiv2025

Interface-Controlled Antiferromagnetic Tunnel Junctions based on a metallic van der Waals A-type Antiferromagnet

Magnetic tunnel junctions (MTJs) are crucial components in high-performance spintronic devices. Traditional MTJs rely on ferromagnetic (FM) materials but significant improvements in speed and packing density could be enabled by exploiting antiferromagnetic (AFM) compounds instead. Here, we report all-collinear AFM tunnel junctions (AFMTJs) fabricated with van der Waals A-type AFM metal (Fe0.6Co0.4)5GeTe2 (FCGT) electrodes and nonmagnetic semiconducting WSe2 tunnel barriers. The AFMTJ heterostructure device achieves a tunneling magnetoresistance (TMR) ratio of up to 75% in response to magnetic field switching. Our results demonstrate that the TMR exclusively emerges in the AFM state of FCGT, rather than during the AFM-to-FM transition. By engineering FCGT electrodes with either even- or odd-layer configurations, volatile or non-volatile TMR could be selected, consistent with an entirely interfacial effect. TMR in the even-layer devices arose by N\'eel vector switching. In the odd-layer devices, TMR stemmed from interfacial spin-flipping. Experimental and theoretical analyses reveal a new TMR mechanism associated with interface-driven spin-polarized transport, despite the spin-independent nature of bulk FCGT. Our work demonstrates that collinear AFMTJs can provide comparable performance to conventional MTJs and introduces a new paradigm for AFM spintronics, in which the spin-dependent properties of AFM interfaces are harnessed.

cond-mat.mes-hall↗

arXiv2025

Interface-controlled antiferromagnetic tunnel junctions

Magnetic tunnel junctions (MTJs) are the key building blocks of high-performance spintronic devices. While conventional MTJs rely on ferromagnetic (FM) materials, employing antiferromagnetic (AFM) compounds can significantly increase operation speed and packing density. Current prototypes of AFM tunnel junctions (AFMTJs) exploit antiferromagnets either as spin-filter insulating barriers or as metal electrodes supporting bulk spin-dependent currents. Here, we highlight a largely overlooked AFMTJ prototype, where bulk-spin-degenerate electrodes with an A-type AFM stacking form magnetically uncompensated interfaces, enabling spin-polarized tunneling currents and a sizable tunneling magnetoresistance (TMR) effect. Using first-principles quantum-transport calculations and the van der Waals (vdW) metal Fe$_{4}$GeTe$_{2}$ as a representative A-type AFM electrode, we demonstrate a large negative TMR arising solely from the alignment of interfacial magnetic moments. This prototype of AFMTJs can also be realized with various non-vdW A-type AFM metals that support roughness-insensitive surface magnetization. Beyond TMR, AFMTJs based on A-type antiferromagnets allow convenient switching of the N\'eel vector, opening a new paradigm for AFM spintronics that leverages spin-dependent properties at AFM interfaces.

cond-mat.mtrl-sci↗

arXiv2025

Deterministic Switching of the N\'{e}el Vector by Asymmetric Spin Torque

N\'eel vector, the order parameter of collinear antiferromagnets, serves as a state variable in associated antiferromagnetic (AFM) spintronic devices to encode information. A deterministic switching of N\'eel vector is crucial for the write-in operation, which, however, remains a challenging problem in AFM spintronics. Here we demonstrate, based on analytical derivation and macro-spin simulations, that N\'eel vector switching can be generally achieved via a current-induced spin torque, provided the spin accumulations responsible for this torque are non-identical between opposite sublattices. This condition occurs widely in AFM films, as symmetry equivalence between sublattice-dependent spin accumulations is usually absent, allowing unequal spin accumulations induced by Edelstein effect or a spin current. Unlike previously studied spin torques induced by uniform or staggered spin accumulations -- where either the field-like or damping-like component dominates exclusively -- the asymmetric spin torque features cooperative contributions from both components, leading to N\'eel vector dynamics that are fundamentally distinct from previous expectations. Crucially, the static states stabilized by the asymmetric spin torque enable versatile N\'eel vector switching strategies -- field-free spin-transfer torque switching during current application, as well as field-free or field-assisted spin-orbit torque switching after the current pulse -- demonstrating that established spin torque techniques from ferromagnetic spintronics can be directly adapted to AFM systems, a capability absent in previous theoretical frameworks. Our work establishes a general mechanism for current-induced N\'eel vector switching, which is in principle feasible for all collinear antiferromagnets, and thus paves the route to realize efficient writing in AFM spintronics.

cond-mat.mtrl-sci↗

arXiv2025

TensorSymmetry: a package to get symmetry-adapted tensors disentangling spin-orbit coupling effect and establishing analytical relationship with magnetic order

The symmetry-constrained response tensors on transport, optical, and electromagnetic effects are of central importance in condensed matter physics because they can guide experimental detections and verify theoretical calculations. These tensors encompass various forms, including polar, axial, i-type (time-reversal even), and c-type (time-reversal odd) matrixes. The commonly used magnetic groups, however, fail to describe the phenomena without the spin-orbit coupling (SOC) effect and cannot build the analytical relationship between magnetic orders with response tensors in magnetic materials. Developing approaches on these two aspects is quite demanding for theory and experiment. In this paper, we use the magnetic group, spin group, and extrinsic parameter method comprehensively to investigate the symmetry-constrained response tensors, then implement the above method in a platform called "TensorSymmetry". With the package, we can get the response tensors disentangling the effect free of SOC and establish the analytical relationship with magnetic order, which provides useful guidance for theoretical and experimental investigation for magnetic materials.

cond-mat.mtrl-sci↗

arXiv2025

Giant Self Spin-Valve Effect in the Kagome Helimagnet

Kagome magnets can combine non-trivial band topology and electron correlations, offering a versatile playground for various quantum phenomena. In this work we propose that kagome magnets with frustrated interlayer interactions can intrinsically support a self spin-valve effect, and experimentally confirm this in the kagome helimagnet TmMn$_6$Sn$_6$. Under a magnetic field perpendicular to the helical axis, using magnetic force microscopy we observed stripe domains that stack strictly along the helical axis, which we attribute to the stability loss of the kagome helimagnetic state. Such a domain pattern spontaneously mimics the artificial multilayered structure in traditional spin valves, which, combined with the high spin polarization, leads to a giant magnetoresistance (GMR) ratio over 160%. This discovery opens an avenue to realize inherent spin valves in a variety of quantum magnets, and can hold promise in future spintronics.

cond-mat.str-el↗

arXiv2025

Giant Uncompensated Magnon Spin Currents in X-type Magnets

Magnon spin currents in insulating magnets are useful for low-power spintronics. However, in magnets stacked by antiferromagnetic (AFM) exchange coupling, which have recently aroused significant interest for potential applications in spintronics, these currents are largely counteracted by opposite magnetic sublattices, thus suppressing their net effect. Contrary to this common observation, here, we show that magnets with X-type AFM stacking, where opposite magnetic sublattices form orthogonal intersecting chains, support giant magnon spin currents with minimal compensation. Our model Hamiltonian calculations predict magnetic chain locking of magnon spin currents in these X-type magnets, significantly reducing their compensation ratio. In addition, the one-dimensional nature of the chain-like magnetic sublattices enhances magnon spin conductivities surpassing those of two-dimensional ferromagnets and canonical altermagnets. Notably, uncompensated X-type magnets, such as odd-layer antiferromagnets and ferrimagnets, can exhibit magnon spin currents polarized opposite to those expected by their net magnetization. These unprecedented properties of X-type magnets, combined with their inherent advantages resulting from AFM coupling, offer a promising new path for low-power high-performance spintronics.

cond-mat.mtrl-sci↗