arXiv subjects

Ding-Ming Huang

Publications and source records attributed to Ding-Ming Huang.

5 recordsLinked to original sources

arXiv2026

Enhancing charge stability of Ge quantum well heterostructures via SiGe layer composition engineering

Composition modulation is a powerful technique for designing materials with tailored properties, fueling the development of advanced semiconductor devices. In this work, we have implemented this technique into Ge quantum well heterostructures, offering a promising avenue to address the critical challenge of charge stability in spin qubit devices. Harnessing the atomic-scale precision of molecular beam epitaxy, we have engineered the band structure of the SiGe top barrier via graded composition modulation, thereby reducing charge accumulation states at the SiGe-dielectric interface and strengthening the effective confinement to the hole gases in the Ge quantum wells. The enhanced charge stability of composition-modulated SiGe/Ge quantum well heterostructures is confirmed in Hall devices, featuring an enlarged stable gate voltage range. We have further fabricated quantum dot devices from the composition-modulated SiGe/Ge quantum well heterostructures and observed remarkably low charge noise with an averaged amplitude of $0.46\,\mathrm{\mu eV}/\mathrm{\sqrt{Hz}}$ at $1\,\mathrm{Hz}$---the lowest reported value for Ge quantum wells grown on silicon. This exceptional charge stability of the quantum dots persists in the few-hole regime, with no observable voltage drift over $\sim$hours. With reduced charge noise and enhanced energy stability, composition-modulated SiGe/Ge heterostructures exhibit significant potential for applications in building high-performance quantum devices, including spin qubits with a long coherence time.

cond-mat.mes-hall↗

arXiv2026

Single-Crystalline Al/Ge Heterostructure with an Atomically Sharp Commensurate Interface

A key challenge in developing Al/Ge heterostructures for quantum applications is Al-Ge interdiffusion. This process is facilitated by grain boundaries in polycrystalline films, which degrades interface quality and impairs device performance and reliability. Here, we present epitaxial growth of single-crystalline Al(111) on Ge(111) by molecular beam epitaxy, achieving an atomically flat and sharp interface. At the interface, a commensurate 7-Al-lattice/5-Ge-lattice epitaxial relationship is observed, which dramatically reduces the intrinsic lattice mismatch from 28.4% to about 0.1%. Interestingly, this well-ordered interface does not form below a critical thickness of 0.3 nm. Instead, Al initially nucleates as random clusters, which then transform into two-dimensional (2D) islands and, as Al deposition further increases, eventually develop into a continuous film. By optimizing the growth parameters, we have achieved an ultra-flat Al film with a surface root-mean-square roughness of about 0.16 nm and an ultra-thin continuous film with thickness of only 2 nm. These epitaxially grown Al-Ge heterostructures, with their atomically flat surfaces and sharp interfaces, provide a promising platform for studying topological quantum states.

cond-mat.mtrl-sci↗

arXiv2025

Atomically resolved electron reflectivity at a metal/semiconductor interface

An atomically flat interface is achieved between face-centered cubic Al and diamond lattice Ge via molecular beam epitaxy (MBE). Based on the measurements of scanning tunneling microscopy (STM), we demonstrate an atomically resolved lateral periodic change of the electron reflectivity at the Al/Ge interface. The variation of electron reflectivity is up to 24% in lateral 2 nm. We speculate that the change of reflectivity results from the local electronic states at the Al/Ge interface. This phenomenon provides an atomically non-destructive method for detecting the buried interfacial states in hetero-structures by STM.

cond-mat.mes-hall↗

arXiv2025

Scalable and Tunable In-Plane Ge/Si(001) Nanowires Grown by Molecular Beam Epitaxy

Germanium nanostructures offer significant potential in developing advanced integrated circuit and disruptive quantum technologies, yet achieving both scalability and high carrier mobility remains a challenge in materials science. Here, we report an original low-temperature epitaxial method for growth of site-controlled in-plane germanium nanowires with high hole mobility by molecular beam epitaxy. By reducing the growth temperature, we effectively suppress Si-Ge interdiffusion, ensuring pure germanium composition within the nanowires while preserving their high crystalline quality. The method employs pre-patterned ridges on strain-relaxed Si$_{0.75}$Ge$_{0.25}$/Si(001) substrates as tailored templates, enabling control over the position, length, spacing and cross-sectional shape of the nanowires. Electrical measurements of field-effect devices made from as-grown germanium nanowires show that the nanowires are of hole conduction with mobility exceeding 7000 cm$^{2}$/Vs at 2-20 K. The method paves a way for fabrication of scalable germanium nanowire networks, providing a reliable platform for the developments of high-performance nanoelectronics and multi-qubit chips.

cond-mat.mes-hall↗

arXiv2023

Strain effects in twisted spiral antimonene

van der Waals (vdW) layered materials exhibit fruitful novel physical properties. The energy band of such materials depends strongly on their structures and a tremendous variation in their physical properties can be deduced from a tiny change in inter-layer spacing, twist angle, or in-plane strain. In this work, a kind of vdW layered material of spiral antimonene is constructed, and the strain effects in the material are studied. The spiral antimonene is grown on a germanium (Ge) substrate and is induced by a helical dislocation penetrating through few-atomic-layers of antimonene (\b{eta}-phase). The as-grown spiral is intrinsically strained and the lattice distortion is found to be pinned around the dislocation. Both spontaneous inter-layer twist and in-plane anisotropic strain are observed in scanning tunneling microscope (STM) measurements. The strain in the spiral antimonene can be significantly modified by STM tip interaction, leading to a variation in the surface electronic density of states (DOS) and a large modification in the work function of up to a few hundreds of milli-electron-volts (meV). Those strain effects are expected to have potential applications in building up novel piezoelectric devices.

cond-mat.mtrl-sci↗