arXiv subjects

Dingding Ren

Publications and source records attributed to Dingding Ren.

4 recordsLinked to original sources

arXiv2026

Correlating Quasi-Optical Coupling Efficiency with Measured Receiver Noise Temperature in Metalens Coupled THz HEB Mixer

Quasi-optical coupling serves as the critical interface in terahertz (THz) heterodyne receiver systems, enabling efficient transfer of incident radiation to photomixers through a focusing element and a planar microwave antenna. With recent advances in nanofabrication, planar dielectric metalenses have emerged as promising alternatives to conventional refractive optics due to their compactness and scalability. However, unlike conventional elliptical silicon lenses that are often treated as nearly ideal optical components, the focusing characteristics of metalenses, including both phase and amplitude, strongly depend on the local deflection angle across the aperture, creating an urgent need to quantitatively understand the coupling between a dielectric metalens and a planar antenna. In this work, we present a quasi-optical coupling analysis between a planar Si metalens and a logarithmic spiral antenna integrated with a THz superconducting NbN hot-electron bolometer (HEB) mixer operating at 1.63 THz using spherical-coordinate vectorial integration. By combining the angular radiation profile of the spiral antenna with the propagated complex electric-field profile from metalens numerical simulations, the calculated coupling efficiency accounts for angular power distribution, phase-front matching, and polarization-dependent vectorial overlap. The calculated coupling efficiency is then directly correlated with experimentally measured double-sideband receiver noise temperatures through comparison with a conventional elliptical Si lens measured under the same receiver configuration. The analysis establishes a quantitative relationship between metalens focusing efficiency, vectorial antenna coupling, and receiver noise temperature, providing guidance for optimizing metalens design and improving the overall performance of metalens-integrated THz heterodyne receivers.

physics.optics↗

arXiv2024

Quasi van der Waals Epitaxial Growth of GaAsSb Nanowires on Graphitic Substrate for Photonic Applications

III-V semiconductor nanowires are considered promising building blocks for advanced photonic devices. One of the key advantages is that the lattice mismatch can easily be accommodated in 1D structures, resulting in superior heteroepitaxial quality compared to thin films. However, few reports break the limitation of using bulk crystalline materials as substrates for epitaxial growth of high-quality photonic 1D components, making monolithic integration of III-V components on arbitrary substrates challenging. In this work, we show that the growth of self-catalyzed GaAsSb nanowires on graphitic substrates can be promoted by creating step edges of monolayer thickness on kish graphite before the growth. By further alternating the deposition sequence of the group-III element Al and the group-V elements As and Sb, it was found that triangular crystallites form when Al is deposited first. This indicates that the surface binding energy between the graphitic surface and the III-V nucleus profoundly influences the epitaxial growth of III-V materials on graphitic surfaces. Using the optimized growth recipe with an AlAsSb buffer nuclei, vertical [111]-oriented GaAsSb/GaAs nanowires with GaAsSb-based multiple axial superlattices were grown on exfoliated graphite, which was attached to a (001) AlAs/GaAs distributed Bragg reflector (DBR) using the simple Scotch tape method. Fabry-P\'{e}rot resonance modes were observed under optical excitation at room temperature, indicating a successful monolithic integration with optical feedback from the DBR system. These results demonstrate the great potential for flexible integration of high-efficiency III-V nanowire photonic devices on arbitrary photonic platforms using a 2D material buffer layer, e.g., graphene, without breaking the orientation registry.

cond-mat.mes-hall↗

arXiv2021

High-Q longwave infrared microresonators based on a non-epitaxial germanium platform

The longwave infrared (LWIR) region of the spectrum spans 8 to 14 {\mu}m and enables high-performance sensing and imaging for detection, ranging, and monitoring. Chip-scale integrated LWIR photonics has enormous potential for real-time environmental monitoring, explosive detection, and biomedicine. However, realizing advanced technologies such as precision sensors and broadband frequency combs requires ultra low-loss components, which have so far remained elusive in this regime. We demonstrate that non-epitaxial germanium is an enabling technology for longwave infrared integrated photonics, using it to demonstrate the first high quality (Q) factor whispering gallery mode microresonators in the LWIR, which we couple to integrated low-loss waveguides. At 8 {\mu}m, we measure losses of 0.5 dB/cm and intrinsic Q factors of 2.5x10^5, nearly two orders of magnitude higher than prior LWIR resonators. Our work portends the development of integrated sensing and nonlinear photonics in the LWIR regime.

physics.optics↗

arXiv2017

Single-mode Near-infrared Lasing in a GaAsSb/GaAs Nanowire Superlattice at Room Temperature

Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibility for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip optical communications. Here, we report on the realization of single-mode room-temperature lasing from 890 nm to 990 nm utilizing a novel design of single nanowires with GaAsSb-based multiple superlattices as gain medium under optical pumping. The wavelength tunability with comprehensively enhanced lasing performance is shown to result from the unique nanowire structure with efficient gain materials, which delivers a lasing quality factor as high as 1250, a reduced lasing threshold ~ 6 kW cm-2 and a high characteristic temperature ~ 129 K. These results present a major advancement for the design and synthesis of nanowire laser structures, which can pave the way towards future nanoscale integrated optoelectronic systems with stunning performance.

cond-mat.mes-hall↗