arXiv subjects

Dingkun Bi

Publications and source records attributed to Dingkun Bi.

2 recordsLinked to original sources

arXiv2026

Strong phonon-coupled trion emission in Janus homobilayer

Janus transition metal dichalcogenides with broken mirror symmetry provide a novel platform for exploring many-body effects mediated by spin-valley-phonon interactions. Strong electron-phonon coupling demands a precise match between a strong effective dipole moment and nanometer-scale charge confinement. Here, we report thermally robust and enhanced trion emission in a symmetric bilayer WSeS with an S/S stacking configuration. The inward-pointing antiparallel built-in electric fields induce a strong electron confinement effect at the interface, driving dominant trion emission at cryogenic temperatures. Furthermore, a massive electron-phonon coupling strength (3.9) resonant with the optical phonon A_1^2 energy (51 meV) contributes to the thermal stability of this trion emission at elevated temperatures. By tailoring the interfacial architecture in Janus WSeS homobilayers, this study overcomes the thermal decoherence limits inherent to traditional semiconductor systems, offering novel insights into room-temperature many-body interactions.

cond-mat.mes-hall↗

arXiv2025

Direct observation of band structure modifications from monolayer WSe2 to Janus WSSe

Janus monolayer transition metal dichalcogenides (TMDs), created by post-growth substitution of the top chalcogen layer, represent a new direction for engineering 2D crystal properties. However, their rapid ambient degradation and the difficulty of obtaining large-area monolayer samples have limited the available experimental probes, leaving their detailed electronic structure near the Fermi level largely unexplored. In this work, by performing micro-focused angle-resolved photoemission spectroscopy (μ-ARPES) on an identical sample transformed from monolayer WSe2 to Janus WSSe via a H2 plasma-assisted chalcogen-exchange method, we reveal the evolution of its electronic band structure. We observe ARPES signature consistent with the Rashba-type spin splitting due to broken horizontal mirror symmetry, and a significant upward shift of the highest valence band at the Γ-point by approximately 160 meV. These direct observations clarify the key electronic modifications that govern the material's properties and provide a pathway for band engineering in Janus TMDs.

cond-mat.mtrl-sci↗