arXiv subjects

Dingqu Lin

Publications and source records attributed to Dingqu Lin.

3 recordsLinked to original sources

arXiv2026

High Performance 4H-SiC Optically Controlled MOS Transistor

This paper introduces an optically controlled 4H-SiC MOSFET designed to avoid the gate-oxide interface unreliability and electromagnetic interference (EMI) susceptibility inherent in conventional voltage-driven devices. By replacing the conventional gate electrode with a semi-transparent optical window, the device enables direct modulation of channel conductivity through ultraviolet illumination. Electrical and optical characterization demonstrates that under an optical power density above 0.1 W/cm^2, the device achieves an on/off current ratio exceeding 10^6 between illuminated and dark states. Notably, at an optical power density of 0.031 W/cm^2, the photogenerated current density exceeds that obtained under a gate bias of 15 V in magnitude. Energy band analysis confirms that the optical switching mechanism operates through direct photogenerated carrier generation and transport, fundamentally differing from conventional gate voltage control and thus circumventing interface-trap and EMI-related limitations. Dynamic measurements further reveal fast switching capability, with a rise time of 1.44 ns. These results validate the feasibility of optically driven switching in SiC-based devices and highlight their potential for high-speed logic applications.

physics.app-ph↗

arXiv2024

Local Avalanche Photodetectors Driven by Lightning-rod Effect and Surface Plasmon Excitations

Sensitive avalanche photodetectors (APDs) that operate within the ultraviolet spectrum are critically required for applications in detecting fire and deep-space exploration. However, the development of such devices faces significant challenges, including high avalanche breakdown voltage, the necessity for complex quenching circuits, and thermal runaway associated with Geiger-mode avalanche operation. To mitigate these issues, we report on a 4H-SiC APD design utilizing micro-holes (MHs) structures and Al nano-triangles (NTs) to enhance surface electric field driven by strong localized surface plasmon excitations and lightning-rod effect. The device demonstrates a record low avalanche breakdown voltage of approximately 14.5 V, a high detectivity of 7E13 Jones, a nanosecond-level response time, and repeated stable detections without the requirement of a quenching circuit. Collectively, when compared with the conventional wide-bandgap-based APDs, this device achieves a reduction in avalanche breakdown voltage by an order of magnitude and exhibits a substantial increase in detectivity. Consequently, the proposed APD configuration presents a promising candidate for ultraviolet detection and integrated optoelectronic circuits.

physics.optics↗

arXiv2024

Prolonging Carrier Lifetime in P-type 4H-SiC Epilayer by Thermal Oxidation and Hydrogen Annealing

A minority carrier lifetime of 25.46 $\mu$s in a P-type 4H-SiC epilayer has been attained through sequential thermal oxidation and hydrogen annealing. Thermal oxidation can enhance the minority carrier lifetime in the 4H-SiC epilayer by reducing carbon vacancies. However, this process also generates carbon clusters with limited diffusivity and contributes to the enlargement of surface pits on the 4H-SiC. High-temperature hydrogen annealing effectively reduces stacking fault and dislocation density. Moreover, electron spin resonance analysis indicates a significant reduction in carbon vacancy defects after hydrogen annealing. The mechanisms of the elimination of carbon vacancies by hydrogen annealing include the decomposition of carbon clusters formed during thermal oxidation and the low-pressure selective etching by hydrogen, which increases the carbon content on the 4H-SiC surface and facilitates carbon diffusion. Consequently, the combination of thermal oxidation and hydrogen annealing eliminates carbon vacancies more effectively, substantially enhancing the minority carrier lifetime in P-type 4H-SiC. This improvement is advantageous for the application of high-voltage SiC bipolar devices.

cond-mat.mtrl-sci↗