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Dipak Maity

Publications and source records attributed to Dipak Maity.

3 recordsLinked to original sources

Charge transfer mediated anomalous photoluminescence enhancement in monolayer MoS2 graphene heterostructure via polystyrene assisted wet transfer

Van der Waals MoS2 graphene heterostructures are compelling candidates for high performance electronic and optoelectronic device applications. However, the interlayer charge transfer typically quenches the photoluminescence of monolayer MoS2, limiting the use of these heterostructures in light emitting applications. In this work, we report an anomalous photoluminescence enhancement in n-type monolayer MoS2 by integrating it with monolayer graphene via polystyrene assisted wet transfer process. Photoluminescence spectroscopy reveals a dominant trion to exciton conversion in the heterostructure. Kelvin probe force microscopy shows a 600 meV increase in the work function of MoS2 upon heterostructure formation. This work function shift, together with the higher work function of graphene, signifies electron transfer from MoS2 to graphene. Shifts in the graphene G and 2D Raman modes further corroborate the interlayer charge transfer. Hydroxyl and epoxy functionalization of graphene following heterostructure formation is evidenced by X ray photoelectron spectroscopy. DFT based Bader charge analysis quantifies the role of these functional groups in facilitating interlayer charge transfer. Collectively, our findings establish polystyrene assisted wet transfer as a practical interface engineering strategy for enhancing excitonic emission in MoS2 graphene heterostructures, thereby advancing their potential for scalable optoelectronic devices.

cond-mat.mes-hall

Vanadium Doped Magnetic MoS2 Monolayers of Improved Electrical Conductivity as Spin-Orbit Torque Layer

Two-dimensional (2D) transition metal di-chalcogenide layers with high electrical conductivity and spin-orbit coupling (SOC) can find huge potential in spintronic devices. With limited success of 2D spin Hall material development, we demonstrate vanadium (V) substitutionally doped monolayer MoS2 (VMS) as a potential spin Hall material having tunable electrical conductivity, SOC strength, and room temperature magnetism. Systematic enhancement in the electrical conductivity is observed with the extent of V doping, where it is enhanced from ~0.3 S/m of MoS2 to ~100000 S/m upon doping to the level of 9 atomic%. Ferromagnetic resonance (FMR) based spin-pumping experiments indicate the spin transport across the junction of permalloy (Py) and VMS. Spin-torque FMR measurements demonstrate the suggesting latter's potential as a spin-orbit torque layer in 2D spintronic devices.

physics.app-ph

On the Existence of Photoluminescence and Room-Temperature Spin Polarization in Ambipolar V doped MoS$_2$ Monolayers

Opto-spintronics is an emerging field where ultra-thin magnetic-semiconductors having high spin-valley coupling play an important role. Here, we demonstrate substitutional vanadium (V) doping in MoS$_2$ lattice in different extent, leading to the coexistence of photoluminescence (PL), valleypolarization (~32%), and valley splitting (~28 meV shift in PL with helicity $σ^+$ and $σ^-$ of light excitation). A large V doping causes semiconductor to metal transition in MoS$_2$ but with medium level causing the existence of photoluminescence with high spin polarization. The ambipolar nature of medium level V doped MoS$_2$ is shown here indicating its potential as an opto-electronic material. The presence of V-dopants and their different level of content are proven by both spectroscopic and microscopic methods.A detailed temperature and power dependent photoluminescence studies along with density functional theory-based calculations in support unravels the emergence of the co-existence of spin-valley coupling and photoluminescence. This study shows the potential of doping MoS$_2$ for deriving new materials for next generation room temperature opto-spintronics.

physics.app-ph