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Dipankar Kalita

Publications and source records attributed to Dipankar Kalita.

6 recordsLinked to original sources

Fermi resonance in the Raman spectrum of graphene

We report the observation of an intense anomalous peak at 1608 cm$^{-1}$ in the Raman spectrum of graphene associated to the presence of chromium nanoparticles in contact with graphene. Bombardment with an electron beam demonstrates that this peak is distinct from the well studied D$'$ peak appearing as defects are created in graphene; the new peak is found non dispersive. We argue that the bonding of chromium atoms with carbon atoms softens the out-of-plane optical (ZO) phonon mode, in such a way that the frequency of its overtone decreases to $2ω_{\rm ZO}\simω_{\rm G}$, where $ω_{\rm G}$=1585~cm$^{-1}$ is the frequency of the Raman-active E$_{\rm 2g}$ mode. Thus, the observed new peak is attributed to the 2ZO mode which becomes Raman-active following a mechanism known as Fermi resonance. First-principles calculations on vibrational and anharmonic properties of the graphene/Cr interface support this scenario.

cond-mat.mes-hall

Sensing ion channels in neuronal networks with graphene transistors

Graphene, the atomically-thin honeycomb carbon lattice, is a highly conducting 2D material whose exposed electronic structure offers an ideal platform for sensing. Its biocompatible, flexible, and chemically inert nature associated to the lack of dangling bonds, offers novel perspectives for direct interfacing with bioelements. When combined with its exceptional electronic and optical properties, graphene becomes a very promising material for bioelectronics. Among the successful bio-integrations of graphene, the detection of ionic currents through artificial membrane channels and extracellular action potentials in electrogenic cells have paved the road for the high spatial resolution and wide-field imaging of neuronal activity. However, various issues including the low signals amplitude, confinement and stochasticity of neuronal signals associated to the complex architecture and interconnectivity of neural networks should be still overcome. Recently, grain boundaries found in CVD graphene were shown to drastically increase the sensitivity of graphene transistors providing nanoscale sensing sites. Here we demonstrate the ability of liquid-gated graphene field effect transistors (G-FET) on which hippocampal neurons are grown for real-time detection of single ion channels activity. Dependence upon drugs and reference potential gating is presented and is found compatible with the nanoscale coupling of a few ion channels to graphene grain boundaries.

cond-mat.mes-hall

Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors

Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumination. Their structure consists of a GaN nanowire incorporating an AlN/GaN/AlN heterostructure, which generates an internal electric field. The activity of the heterostructure is confirmed by the rectifying behavior of the current-voltage characteristics in the dark, as well as by the asymmetry of the photoresponse in magnitude and linearity. Under reverse bias (negative bias on the GaN cap segment), the detectors behave linearly with the impinging optical power when the nanowire diameter is below a certain threshold ($\approx$ 80 nm), which corresponds to the total depletion of the nanowire stem due to the Fermi level pinning at the sidewalls. In the case of nanowires that are only partially depleted, their nonlinearity is explained by a nonlinear variation of the diameter of their central conducting channel under illumination.

cond-mat.mes-hall

High-Yield Proximity-Induced Chemical Vapor Deposition of Graphene Over Millimeter-Sized Hexagonal Boron Nitride

We present a transfer-free preparation method for graphene on hexagonal boron nitride (h-BN) crystals by chemical vapor deposition of graphene via a catalytic proximity effect, i.e. activated by a Cu catalyst close-by . We demonstrate the full coverage by monolayer graphene of half-millimeter-sized hexagonal boron nitride crystals exfoliated on a copper foil prior to growth. We demonstrate that the proximity of the copper catalyst ensures high yield with the growth rate estimated between of 2μm/min to 5μm/min . Optical and electron microscopies together with confocal micro-Raman mapping confirm that graphene covers the top surface of h-BN crystals that we attribute to be a lateral growth from the supporting catalytic copper substrate. Structural and electron transport characterization of the in-situ grown graphene present an electronic mobility of about 20, 000cm2/(V.s). Comparison with graphene/h-BN stacks obtained by manual transferring of similar CVD graphene onto h-BN, confirms the better neutrality reached by the self-assembled structures.

cond-mat.mtrl-sci

Deviation from the normal mode expansion in a coupled graphene-nanomechanical system

We optomechanically measure the vibrations of a nanomechanical system made of a graphene membrane suspended on a silicon nitride nanoresonator. When probing the thermal noise of the coupled nanomechanical device, we observe a significant deviation from the normal mode expansion. It originates from the heterogeneous character of mechanical dissipation over the spatial extension of coupled eigenmodes, which violates one of the fundamental prerequisite for employing this commonly used description of the nanoresonators' thermal noise. We subsequently measure the local mechanical susceptibility and demonstrate that the fluctuation-dissipation theorem still holds and permits a proper evaluation of the thermal noise of the nanomechanical system. Since it naturally becomes delicate to ensure a good spatial homogeneity at the nanoscale, this approach is fundamental to correctly describe the thermal noise of nanomechanical systems which ultimately impact their sensing capacity.

cond-mat.mes-hall

Strain superlattices and macroscale suspension of Graphene induced by corrugated substrates

We investigate the organized formation of strain, ripples and suspended features in macroscopic CVD-prepared graphene sheets transferred onto a corrugated substrate made of an ordered arrays of silica pillars of variable geometries. Depending on the aspect ratio and sharpness of the corrugated array, graphene can conformally coat the surface, partially collapse, or lay, fakir-like, fully suspended between pillars over tens of micrometers. Upon increase of pillar density, ripples in collapsed films display a transition from random oriented pleats emerging from pillars to ripples linking nearest neighboring pillars organized in domains of given orientation. Spatially-resolved Raman spectroscopy, atomic force microscopy and electronic microscopy reveal uniaxial strain domains in the transferred graphene, which are induced and controlled by the geometry. We propose a simple theoretical model to explain the transition between suspended and collapsed graphene. For the arrays with high aspect ratio pillars, graphene membranes stays suspended over macroscopic distances with minimal interaction with pillars tip apex. It offers a platform to tailor stress in graphene layers and open perspectives for electron transport and nanomechanical applications.

cond-mat.mes-hall