arXiv subjects

Divya Sahani

Publications and source records attributed to Divya Sahani.

7 recordsLinked to original sources

arXiv2026

Diagnosing the origin of quantum oscillation beating in graphene

Magnetic quantum oscillations are usually periodic in inverse magnetic field, and their amplitude can show beating when two nearby frequencies interfere. In graphene-based hexagonal systems, such beating can arise from strain-induced pseudomagnetic fields, unequal valley populations, valley-dependent energy shifts, spin-orbit coupling-induced band splitting, or Kekul\'e distortions. Here, we show that the carrier density and magnetic field dependence of the beating nodes can distinguish these mechanisms. Starting from Onsager's quantization relation, we derive scaling relations for the critical carrier density $N_c$ for the beating nodes as a function of critical magnetic field $B_c$. A pseudomagnetic field gives $N_c\propto B_c^2$, whereas a density-independent valley imbalance gives $N_c\propto B_c$. A constant Dirac-band energy splitting by Zeeman-like spin-orbit coupling also gives quadratic field scaling, but with a different node sequence: $N_{c,j}\propto(2j+1)B_{c,j}^2$ for a pseudomagnetic field and $N_{c,j}\propto(2j+1)^2B_{c,j}^2$ for energy splitting, where $j$ labels the beating node indices. These results provide quantitative constraints on different microscopic origins of valley- and spin-dependent band splittings in graphene-based systems.

cond-mat.mes-hall↗

arXiv2025

Quantum Transport Spectroscopy of Pseudomagnetic Field in Graphene

Nonuniform strain in graphene acts as a valley-dependent gauge field, generating pseudomagnetic fields (PMFs) that mimic real magnetic fields but preserve global time-reversal symmetry. While local probes have visualized such fields, their quantitative detection via macroscopic transport has remained elusive. Here, we demonstrate that high-mobility graphene exhibits distinct beating patterns in Shubnikov-de Haas oscillations, arising from valley-resolved Landau quantization under different effective magnetic fields. Systematic analysis of these beats reveals universal quadratic and linear scaling of the node carrier density and Landau level filling factor with the applied magnetic field, enabling the extraction of PMFs as small as a few millitesla. Our results establish quantum oscillation spectroscopy as a robust and broadly applicable probe of strain-induced gauge fields in Dirac materials, opening avenues for mechanically tunable valleytronic and straintronic devices.

cond-mat.mes-hall↗

arXiv2025

Odd-parity longitudinal magnetoconductivity in time-reversal symmetry broken materials

Magnetotransport measurements are a sensitive probe of symmetry and electronic structure in quantum materials. While conventional metals exhibit longitudinal magnetoconductivity that is even in a magnetic field ($B$) for small $B$, we show that magnetic materials which intrinsically break time-reversal symmetry (TRS) show an {\it odd-parity magnetoconductivity} (OMC), with a leading linear-$B$ response. Using semiclassical transport theory, we derive explicit expressions for the longitudinal and transverse conductivities and identify their origin in Berry curvature and orbital magnetic moment. Crystalline symmetry analysis shows that longitudinal OMC follows the same point-group constraints as the anomalous Hall effect, while transverse OMC obeys distinct rules, providing an independent probe of TRS breaking. In the large $B$ quantum oscillation regime, we uncover both odd- and even-$B$ contributions, demonstrating OMC beyond the semiclassical picture. Explicit calculations in valley-polarized gapped graphene show that OMC peaks near the band edges, vanish in the band gap and follow the temperature dependence of the magnetic order parameter. Our results explain the odd-parity magnetoresistance recently observed in magnetized graphene and establish OMC as a robust transport signature of intrinsic TRS breaking in metals.

cond-mat.mes-hall↗

arXiv2024

Giant gate-controlled room temperature odd-parity magnetoresistance in magnetized bilayer graphene

Magnetotransport measurements are crucial for understanding the Fermi surface properties, magnetism, and topology in quantum materials. Here, we report the discovery of giant room temperature odd-parity magnetoresistance (OMR) in a bilayer graphene (BLG) heterostructure interfaced with Cr$_2$Te$_2$Ge$_6$ (CGT). Using magnetotransport measurements, we demonstrate that the BLG/CGT heterostructure exhibits a significant antisymmetric longitudinal magnetoresistance, indicative of intrinsic time-reversal symmetry (TRS) breaking in the system. We show that the OMR is tunable via electrostatic gating. Additionally, the OMR is pronounced near the band edges and diminishes with increasing charge carrier density in graphene. Our theoretical analysis reveals that this phenomenon arises from the coupling of the out-of-plane components of Berry curvature and orbital magnetic moment to the applied magnetic field in a TRS-broken system. Our findings establish OMR as a significant probe for TRS breaking in quantum materials in which the crystal symmetries preclude the appearance of anomalous Hall effect.

cond-mat.mes-hall↗

arXiv2023

Universality of Quantum Phase Transitions in the Integer and Fractional Quantum Hall Regimes

Fractional quantum Hall (FQH) phases emerge due to strong electronic interactions and are characterized by anyonic quasiparticles, each distinguished by unique topological parameters, fractional charge, and statistics. In contrast, the integer quantum Hall (IQH) effects can be understood from the band topology of non-interacting electrons. We report a surprising super-universality of the critical behavior across all FQH and IQH transitions. Contrary to the anticipated state-dependent critical exponents, our findings reveal the same critical scaling exponent $\kappa = 0.41 \pm 0.02$ and localization length exponent $\gamma = 2.4 \pm 0.2$ for fractional and integer quantum Hall transitions. From these, we extract the value of the dynamical exponent $z\approx 1$. We have achieved this in ultra-high mobility trilayer graphene devices with a metallic screening layer close to the conduction channels. The observation of these global critical exponents across various quantum Hall phase transitions was masked in previous studies by significant sample-to-sample variation in the measured values of $\kappa$ in conventional semiconductor heterostructures, where long-range correlated disorder dominates. We show that the robust scaling exponents are valid in the limit of short-range disorder correlations.

cond-mat.mes-hall↗

arXiv2023

Observation of time-reversal symmetric Hall effect in graphene-WSe2 heterostructures at room temperature

In this letter, we provide experimental evidence of the time-reversal symmetric Hall effect in a mesoscopic system, namely high-mobility graphene/WSe$_2$ heterostructures. This linear, dissipative Hall effect, whose sign depends on the sign of the charge carriers, persists up to room temperature. The magnitude and the sign of the Hall signal can be tuned using an external perpendicular electric field. Our joint experimental and theoretical study establishes that the strain induced by lattice mismatch, or angle inhomogeneity, produces anisotropic bands in graphene while simultaneously breaking the inversion symmetry. The band anisotropy and reduced spatial symmetry lead to the appearance of a time-reversal symmetric Hall effect. Our study establishes graphene-transition metal dichalcogenide-based heterostructures as an excellent platform for studying the effects of broken symmetry on the physical properties of band-engineered two-dimensional systems.

cond-mat.mes-hall↗

arXiv2021

Transition from three- to two-dimensional Ising superconductivity in few-layer NbSe2 by proximity effect from van der Waals heterostacking

We report the experimental observation of Ising superconductivity in 3-dimensional NbSe2 stacked with single-layer MoS2. The angular dependence of the upper critical magnetic field and the temperature dependence of the upper parallel critical field confirm the appearance of two-dimensional Ising superconductivity in the 3-dimensional NbSe2 with single-layer MoS2 overlay. We show that the superconducting phase has strong Ising spin-orbit correlations which make the holes spin non-degenerate. Our observation of Ising superconductivity in heterostructures of few-layer NbSe2 of thickness ~ 15 nm with single-layer MoS2 raises the interesting prospect of observing topological chiral superconductors with nontrivial Chern numbers in a momentum-space spin-split fermionic system.

cond-mat.supr-con↗