arXiv subjects

Dmitri Golubev

Publications and source records attributed to Dmitri Golubev.

3 recordsLinked to original sources

arXiv2017

Thermal relaxation in titanium nanowires: signatures of inelastic electron-boundary scattering in heat transfer

We have employed noise thermometry for investigations of thermal relaxation between the electrons and the substrate in nanowires patterned from 40-nm-thick titanium film on top of silicon wafers covered by a native oxide. By controlling the electronic temperature $T_e$ by Joule heating at the base temperature of a dilution refrigerator, we probe the electron-phonon coupling and the thermal boundary resistance at temperatures $T_e= 0.5 - 3$ Kelvin. Using a regular $T^5$-dependent electron-phonon coupling of clean metals and a $T^4$-dependent interfacial heat flow, we deduce a small contribution for the direct energy transfer from the titanium electrons to the substrate phonons due to inelastic electron-boundary scattering.

cond-mat.mes-hall↗

arXiv2017

Transport properties of ultrathin YBa$_2$Cu$_3$O$_{7-δ}$ nanowires: a route to single photon detection

We report on the growth and characterization of ultrathin YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO) films on MgO (110) substrates, which exhibit superconducting properties at thicknesses down to 3 nm. YBCO nanowires, with thicknesses down to 10 nm and widths down to 65 nm, have been also successfully fabricated. The nanowires protected by a Au capping layer show superconducting properties close to the as-grown films, and critical current densities, which are only limited by vortex dynamics. The 10 nm thick YBCO nanowires without the Au capping present hysteretic current voltage characteristics, characterized by a voltage switch which drives the nanowires directly from the superconducting to the normal state. Such bistability is associated in NbN nanowires to the presence of localized normal domains within the superconductor. The presence of the voltage switch, in ultrathin nanostructures characterized by high sheet resistance values, though preserving high quality superconducting properties, make our nanowires very attractive devices to engineer single photon detectors.

cond-mat.supr-con↗

arXiv2009

Disorder-induced pseudodiffusive transport in graphene nanoribbons

We study the transition from ballistic to diffusive and localized transport in graphene nanoribbons in the presence of binary disorder, which can be generated by chemical adsorbates or substitutional doping. We show that the interplay between the induced average doping (arising from the non-zero average of the disorder) and impurity scattering modifies the traditional picture of phase-coherent transport. Close to the Dirac point, intrinsic evanescent modes produced by the impurities dominate transport at short lengths, giving rise to a new regime analogous to pseudodiffusive transport in clean graphene, but without the requirement of heavily doped contacts. This intrinsic pseudodiffusive regime precedes the traditional ballistic, diffusive and localized regimes. The last two regimes exhibit a strongly modified effective number of propagating modes, and a mean free path which becomes anomalously large close to the Dirac point.

cond-mat.mes-hall↗