arXiv subjects

Dmitri N. Basov

Publications and source records attributed to Dmitri N. Basov.

26 records · Page 2Linked to original sources

arXiv2023

Terahertz third harmonic generation in c-axis La$_{1.85}$Sr$_{0.15}$CuO$_4$

Terahertz nonlinear optics is a viable method to interrogate collective phenomena in quantum materials spanning ferroelectrics, charge-density waves, and superconductivity. In superconductors this includes the Higgs amplitude and Josephson phase modes. We have investigated the nonlinear c-axis response of optimally doped La$_{1.85}$Sr$_{0.15}$CuO$_4$ using high-field THz time domain spectroscopy (THz-TDS) at field strengths up to $\sim$80 kV/cm. With increasing field, we observe a distinct red-shift of the Josephson plasma edge and enhanced reflectivity (above the plasma edge) arising from third harmonic generation. The non-monotonic temperature dependent response is consistent with nonlinear drive of the Josephson Plasma Mode (JPM) as verified with comparison to theoretical expectations. Our results add to the understanding that, using THz light, the JPM (in addition to the Higgs mode) provides a route to interrogate and control superconducting properties.

cond-mat.supr-con↗

arXiv2022

Programming moiré patterns in 2D materials by bending

Moiré superlattices in twisted two-dimensional materials have generated tremendous excitement as a platform for achieving quantum properties on demand. However, the moiré pattern is highly sensitive to the interlayer atomic registry, and current assembly techniques suffer from imprecise control of the average twist angle, spatial inhomogeneity in the local twist angle, and distortions due to random strain. Here, we demonstrate a new way to manipulate the moiré patterns in hetero- and homo-bilayers through in-plane bending of monolayer ribbons, using the tip of an atomic force microscope. This technique achieves continuous variation of twist angles with improved twist-angle homogeneity and reduced random strain, resulting in moiré patterns with highly tunable wavelength and ultra-low disorder. Our results pave the way for detailed studies of ultra-low disorder moiré systems and the realization of precise strain-engineered devices.

cond-mat.mes-hall↗

arXiv2022

Moiré Modulated Lattice Strain and Thickness-Dependent Lattice Expansion in Epitaxial Ultrathin Films of PdTe$_2$

We report the epitaxial growth of PdTe$_2$ ultrathin films on topological insulator Bi$_2$Se$_3$. A prominent Moiré pattern was observed in STM measurements. The Moiré periodicity increases as film thickness decreases, indicating a lattice expansion of epitaxial PdTe$_2$ thin films with lower thicknesses. In addition, our simulations based on Moiré Metrology reveal uniaxial lattice strains at the edge of PdTe$_2$ domains, and anisotropic strain distributions throughout the Moiré supercell with a net change in lattice strain up to ~2.9%. Our DFT calculations show that this strain effect leads to a narrowing of the band gap at $Γ$ point near the Fermi level. Under a strain of ~2.8%, the band gap at $Γ$ closes completely. Further increasing the lattice strain makes the band gap reopen and the order of conduction band and valence bands inverted in energy. The results offer a proof of concept for constructing quantum grids of topological materials under the modulation of Moiré potentials.

cond-mat.mes-hall↗

arXiv2022

Towards compact phase-matched and waveguided nonlinear optics in atomically layered semiconductors

Nonlinear frequency conversion provides essential tools for light generation, photon entanglement, and manipulation. Transition metal dichalcogenides (TMDs) possess huge nonlinear susceptibilities and 3R-stacked TMD crystals further combine broken inversion symmetry and aligned layering, representing ideal candidates to boost the nonlinear optical gain with minimal footprint. Here, we report on the efficient frequency conversion of 3R-MoS2, revealing the evolution of its exceptional second-order nonlinear processes along the ordinary (in-plane) and extraordinary (out-of-plane) directions. By measuring second harmonic generation (SHG) of 3R-MoS2 with various thickness - from monolayer (~0.65 nm) to bulk (~1 μm) - we present the first measurement of the in-plane SHG coherence length (~530 nm) at 1520 nm and achieve record nonlinear optical enhancement from a van der Waals material, >10^4 stronger than a monolayer. It is found that 3R-MoS2 slabs exhibit similar conversion efficiencies of lithium niobate, but within propagation lengths >100-fold shorter at telecom wavelengths. Furthermore, along the extraordinary axis, we achieve broadly tunable SHG from 3R-MoS2 in a waveguide geometry, revealing the coherence length in such structure for the first time. We characterize the full refractive index spectrum and quantify both birefringence components in anisotropic 3R-MoS2 crystals with near-field nano-imaging. Empowered with these data we assess the intrinsic limits of the conversion efficiency and nonlinear optical processes in 3R-MoS2 attainable in waveguide geometries. Our analysis highlights the potential of 3R-stacked TMDs for integrated photonics, providing critical parameters for designing highly efficient on-chip nonlinear optical devices including periodically poled structures, resonators, compact optical parametric oscillators and amplifiers, and optical quantum circuits.

physics.optics↗

arXiv2021

Dual-gated graphene devices for near-field nano-imaging

Graphene-based heterostructures display a variety of phenomena that are strongly tunable by electrostatic local gates. Monolayer graphene (MLG) exhibits tunable surface plasmon polaritons, as revealed by scanning nano-infrared experiments. In bilayer graphene (BLG), an electronic gap is induced by a perpendicular displacement field. Gapped BLG is predicted to display unusual effects such as plasmon amplification and domain wall plasmons with significantly larger lifetime than MLG. Furthermore, a variety of correlated electronic phases highly sensitive to displacement fields have been observed in twisted graphene structures. However, applying perpendicular displacement fields in nano-infrared experiments has only recently become possible (Ref. 1). In this work, we fully characterize two approaches to realizing nano-optics compatible top-gates: bilayer $\text{MoS}_2$ and MLG. We perform nano-infrared imaging on both types of structures and evaluate their strengths and weaknesses. Our work paves the way for comprehensive near-field experiments of correlated phenomena and plasmonic effects in graphene-based heterostructures.

cond-mat.mes-hall↗

arXiv2020

Deep moiré potentials in twisted transition metal dichalcogenide bilayers

In twisted bilayers of semiconducting transition metal dichalcogenides (TMDs), a combination of structural rippling and electronic coupling gives rise to periodic moiré potentials that can confine charged and neutral excitations. Here, we report experimental measurements of the structure and spectroscopic properties of twisted bilayers of WSe2 and MoSe2 in the H-stacking configuration using scanning tunneling microscopy (STM). Our experiments reveal that the moiré potential in these bilayers at small angles is unexpectedly large, reaching values of above 300 meV for the valence band and 150 meV for the conduction band - an order of magnitude larger than theoretical estimates based on interlayer coupling alone. We further demonstrate that the moiré potential is a non-monotonic function of moiré wavelength, reaching a maximum at around a 13nm moiré period. This non-monotonicity coincides with a drastic change in the structure of the moiré pattern from a continuous variation of stacking order at small moiré wavelengths to a one-dimensional soliton dominated structure at large moiré wavelengths. We show that the in-plane structure of the moiré pattern is captured well by a continuous mechanical relaxation model, and find that the moiré structure and internal strain rather than the interlayer coupling is the dominant factor in determining the moiré potential. Our results demonstrate the potential of using precision moiré structures to create deeply trapped carriers or excitations for quantum electronics and optoelectronics.

cond-mat.mes-hall↗

arXiv2020

Guided Mid-IR and Near-IR Light within a Hybrid Hyperbolic-Material/Silicon Waveguide Heterostructure

Silicon waveguides have enabled large-scale manipulation and processing of near-infrared optical signals on chip. Yet, expanding the bandwidth of guided waves to other frequencies would further increase the functionality of silicon as a photonics platform. Frequency multiplexing by integrating additional architectures is one approach to the problem, but this is challenging to design and integrate within the existing form factor due to scaling with the free-space wavelength. Here, we demonstrate that a hexagonal boron nitride (hBN)/silicon hybrid waveguide can enable dual-band operation at both mid-infrared (6.5-7.0 um) and telecom (1.55 um) frequencies, respectively. Our device is realized via lithography-free transfer of hBN onto a silicon waveguide, maintaining near-infrared operation, while mid-infrared waveguiding of the hyperbolic phonon polaritons (HPhPs) in hBN is induced by the index contrast between the silicon waveguide and the surrounding air, thereby eliminating the need for deleterious etching of the hBN. We verify the behavior of HPhP waveguiding in both straight and curved trajectories, and validate their propagation characteristics within an analytical waveguide theoretical framework. This approach exemplifies a generalizable approach based on integrating hyperbolic media with silicon photonics for realizing frequency multiplexing in on-chip photonic systems.

physics.optics↗

arXiv2020

One-Dimensional Moiré Excitons in Transition-Metal Dichalcogenide Heterobilayers

The formation of interfacial moiré patterns from angular and/or lattice mismatch has become a powerful approach to engineer a range of quantum phenomena in van der Waals heterostructures. For long-lived and valley-polarized interlayer excitons in transition-metal dichalcogenide (TMDC) heterobilayers, signatures of quantum confinement by the moiré landscape have been reported in recent experimental studies. Such moiré confinement has offered the exciting possibility to tailor new excitonic systems, such as ordered arrays of zero-dimensional (0D) quantum emitters and their coupling into topological superlattices. A remarkable nature of the moiré potential is its dramatic response to strain, where a small uniaxial strain can tune the array of quantum-dot-like 0D traps into parallel stripes of one-dimensional (1D) quantum wires. Here, we present direct evidence for the 1D moiré potentials from real space imaging and the corresponding 1D moiré excitons from photoluminescence (PL) emission in MoSe2/WSe2 heterobilayers. Whereas the 0D moiré excitons display quantum emitter-like sharp PL peaks with circular polarization, the PL emission from 1D moiré excitons has linear polarization and two orders of magnitude higher intensity. The results presented here establish strain engineering as a powerful new method to tailor moiré potentials as well as their optical and electronic responses on demand.

cond-mat.mtrl-sci↗