arXiv subjects

Dmitri N. Zakharov

Publications and source records attributed to Dmitri N. Zakharov.

4 recordsLinked to original sources

arXiv2026

Substrate-Mediated Evaporation and Stochastic Evolution of Supported Au Nanoparticles

We use in situ transmission electron microscopy with automated tracking to study supported gold nanoparticles (NPs) during high-temperature vacuum annealing. \rev{The average mass loss per NP is governed by a flat, nearly size-independent substrate-mediated evaporation profile.} On top of \rev{this mean shrinkage}, individual NPs show significant fluctuations in apparent growth or shrinkage, and NP volume follows a \rev{random-walk-like trajectory. To rationalize both the ensemble-mean behavior and the particle-resolved variability, we develop a self-consistent theory that couples substrate-mediated evaporation to collective 2D Ostwald-type mass exchange through a shared adatom field, described in terms of a renormalized screening length and background concentration. In the experimentally relevant regime, the theory predicts an approximately size-independent mean shrinkage rate and clarifies how net mass loss suppresses classical coarsening.} \rev{Superimposed on this deterministic drift, we quantify stochastic volume trajectories and capture their fluctuation spectrum with a minimal Langevin description consistent with intermittent adatom attachment and detachment events.} In addition, we characterize the lateral diffusive motion of NPs, which is responsible for their coalescence. Altogether, our results highlight that stochasticity is intrinsic at the nanoscale \rev{and that predicting the evolution of supported NPs at early and intermediate times requires a unified framework combining substrate-mediated evaporation, collective mass exchange, and stochastic fluctuations.

cond-mat.mtrl-sci↗

arXiv2025

Visualizing metal-mediated nucleation and growth of GaN

Understanding the atomic-scale mechanisms governing metal-mediated nucleation and growth of gallium nitride (GaN) and related alloys is critical for tailoring their structural and functional properties in advanced electronic, optoelectronic, and quantum devices. Using real-time environmental transmission electron microscopy (E-TEM) in conjunction with Gibbs free energy calculations, we elucidate the distinct processes of GaN nucleation and growth from Ga droplet arrays with and without GaN pre-nuclei. For the lowest temperatures, although GaN nucleation at Ga droplet arrays is not observed, GaN growth occurs preferentially at pre-existing GaN nuclei, presumably due to the reduced Gibbs free energy for NH3 decomposition at Ga/GaN interfaces. For intermediate to high temperatures, E-TEM reveals nucleation and growth of GaN from Ga droplets with and without GaN nuclei, with enhanced crystallinity for the GaN nuclei, due to epitaxial templating. These results highlight the critical role of the Ga/GaN interface in facilitating NH3 decomposition and GaN growth, offering fundamental insights into metal-mediated nucleation and growth of GaN and related materials.

cond-mat.mtrl-sci↗

arXiv2025

The role of the solid-melt interface in accelerating the self-catalyzed growth kinetics of III-V semiconductors

Solid-melt interfaces play a pivotal role in governing crystal growth and metal-mediated epitaxy of gallium nitride (GaN) and other semiconductor materials. Using atomistic simulations based on machine-learning interatomic potentials (MLIPs), we uncover that multiple layers of Ga atoms at the GaN-Ga melt interface form structurally ordered and electronically charged configurations that are critical for the growth kinetics of GaN. These ordered layers modulate the free energy landscape (FEL) for N adsorption and substantially reduce the migration barriers for N at the interface compared to a clean GaN surface. Leveraging these interfacial energetics, kinetic Monte Carlo (KMC) simulations reveal that GaN growth follows a diffusion-controlled, layer-by-layer mechanism, with the FEL for N adsorption emerging as the rate-limiting factor. By incorporating facet-specific FELs and the diffusivity/solubility of N in Ga melt, we develop a predictive, fitting-free transport model that estimates facet-dependent growth rates in the range of ~0.01 to 0.04 nm/s, in agreement with experimental growth rates observed in GaN nanoparticles synthesized by Ga-mediated molecular beam epitaxy (MBE). This multiscale framework offers a generalizable and quantitative approach to link atomic-scale ordering and interfacial energetics to macroscopic phenomena, providing actionable insights for the rational design of metal-mediated epitaxial processes.

cond-mat.mtrl-sci↗

arXiv2019

Understanding Important Features of Deep Learning Models for Transmission Electron Microscopy Image Segmentation

Cutting edge deep learning techniques allow for image segmentation with great speed and accuracy. However, application to problems in materials science is often difficult since these complex models may have difficultly learning physical parameters. In situ electron microscopy provides a clear platform for utilizing automated image analysis. In this work we consider the case of studying coarsening dynamics in supported nanoparticles, which is important for understanding e.g. the degradation of industrial catalysts. By systematically studying dataset preparation, neural network architecture, and accuracy evaluation, we describe important considerations in applying deep learning to physical applications, where generalizable and convincing models are required.

eess.IV↗