arXiv subjects

Dmitry Svintsov

Publications and source records attributed to Dmitry Svintsov.

45 records · Page 3Linked to original sources

arXiv2018

Exact solution for driven oscillations in plasmonic field-effect transistors

High-mobility field effect transistors can serve as resonant detectors of terahertz radiation due to excitation of plasmons in the channel. The modeling of these devices previously relied either on approximate techniques, or complex full-wave simulations. In this paper, we obtain an exact solution for driven electrical oscillations in plasmonic field-effect transistor with realistic contact geometry. The obtained solution highlights the importance of evanescent plasma waves excited near the contacts, which qualitatively modify the detector responsivity spectra. We derive the boundary condition on the ac floating electrodes of plasmonic FET which interpolates between open-circuit (Dyakonov-Shur) and short-circuit (clamped voltage) boundary conditions. In both limits, the FET photovoltage possesses resonant fringes, however, the absolute value of voltage is greater in the open-circuit regime.

physics.app-ph↗

arXiv2018

Auger recombination in Dirac materials: A tangle of many-body effects

The peculiar electron dispersion in Dirac materials makes lowest-order Auger processes prohibited or marginally prohibited by energy and momentum conservation laws. Thus, Auger recombination (AR) in these materials is very sensitive to many-body effects. We incorporate them at the level of the $GW$ approximation into the nonequilibrium Green's functions approach to AR and study the role of dynamic screening, spectrum broadening and renormalization in the case of weakly pumped undoped graphene. We find that incorrect treatment of many-body effects can lead to an order-of-magnitude error in the recombination rate. We show that the AR time weakly (sublinearly) depends on the background dielectric constant, which limits the possibility to control recombination by the choice of substrate. However, the AR time can be considerably prolonged by placing graphene under a metal gate or by introducing a bandgap. With carrier cooling taken into account, our results comply with experiments on photoexcited graphene.

cond-mat.mes-hall↗

arXiv2018

Asymmetry-driven plasmon instabilities in confined hydrodynamic electron flows

Direct current in confined two-dimensional (2d) electron systems can become unstable with respect to the excitation of plasmons. Numerous experiments and simulations hint that structural asymmetry somehow promotes plasmon generation, but a constitutive relation between asymmetry and instability has been missing. We provide such relation in the present paper and show that bounded perfect 2d electron fluids in asymmetric structures are unstable under arbitrarily weak drive currents. To this end, we develop a perturbation theory for hydrodynamic plasmons and evaluate corrections to their eigenfrequency induced by carrier drift, scattering, and viscosity. We show that plasmon gain continuously increases with degree of plasmon mode asymmetry until it surrenders to viscous dissipation that also benefits from asymmetry. The developed formalism allows us to put a lower bound on the instability threshold current, which corresponds to the Reynolds number $R_{\min} = 2\sqrt{3}$ for one-dimensional plasmons in 2d channel under constant voltage bias.

cond-mat.mes-hall↗

arXiv2018

Hydrodynamic-to-ballistic crossover in Dirac fluid

We develop an exactly solvable classical kinetic model of transport in Dirac materials accounting for strong electron-electron (e-e) and electron-hole (e-h) collisions. We use this model to track the evolution of graphene conductivity and properties of its collective excitations across the hydrodynamic-to-ballistic crossover. We find the relaxation rate of electric current by e-e collisions that is possible due to the lack of Galilean invariance, and introduce a universal numerical measure of this non-invariance in arbitrary dimension. We find the two branches of collective excitations in the Dirac fluid: plasmons and electron-hole sound. The sound waves have small viscous damping at the neutrality point both in the hydrodynamic and ballistic regimes, but acquire large damping due to e-h friction even at slight doping. On the contrary, plasmons acquire strong frictional damping at the neutrality point and become well-defined in doped samples.

cond-mat.mes-hall↗

arXiv2016

Ultra-compact injection terahertz laser using the resonant inter-layer radiative transitions in multi-graphene-layer structure

The optimization of laser resonators represents a crucial issue for the design of terahertz semiconductor lasers with high gain and low absorption loss. In this paper, we put forward and optimize the surface plasmonic metal waveguide geometry for the recently proposed terahertz injection laser based on resonant radiative transitions between tunnel-coupled grapheme layers. We find an optimal number of active graphene layer pairs corresponding to the maximum net modal gain. The maximum gain increases with frequency and can be as large as ~ 500 cm-1 at 8 THz, while the threshold length of laser resonator can be as small as ~ 50 mkm. Our findings substantiate the possibility of ultra-compact voltage-tunable graphene-based lasers operating at room temperature.

cond-mat.mes-hall↗

arXiv2016

Amplified-reflection plasmon instabilities in grating-gate plasmonic crystals

We identify a possible mechanism of the plasmon instabilities in periodically gated two-dimensional electron systems with a modulated electron density (plasmonic crystals) under direct current. The instability occurs due to the amplified reflection of the small density perturbations from the gated/ungated boundaries under the proper phase matching conditions between the crystal unit cells. Based on the transfer-matrix formalism, we derive the generic dispersion equation for the travelling plasmons in these structures. Its solution in the hydrodynamic limit shows that the threshold drift velocity for the instability can be tuned below the plasmon phase and carrier saturation velocities, and the plasmon increment can exceed the collisional damping rate typical to III-V semiconductors at 77 K and graphene at room temperature.

cond-mat.mes-hall↗

arXiv2015

Emission and amplification of surface plasmons in resonant - tunneling van der Waals heterostructures

We predict a new mechanism of surface plasmon amplification in graphene-insulator-graphene van der Waals heterostructures. The amplification occurs upon the stimulated interlayer electron tunneling accompanied by the emission of a coherent plasmon. The quantum-mechanical calculations of the non-local high-frequency tunnel conductivity show that a relative smallness of the tunneling exponent can be compensated by a strong resonance due to the enhanced tunneling between electron states with collinear momenta in the neighboring graphene layers. With the optimal selection of the barrier layer, the surface plasmon gain due to the inelastic tunneling can compensate or even exceed the loss due to both Drude and interband absorption. The tunneling emission of the surface plasmons is robust against a slight twist of the graphene layers and might explain the electroluminescence from the tunnel-coupled graphene layers observed in the recent experiments.

cond-mat.mes-hall↗

arXiv2014

Carrier-carrier scattering and negative dynamic conductivity in pumped graphene

We theoretically examine the effect of carrier-carrier scattering processes (electron-hole and electron-electron) on the intraband radiation absorption and their contribution to the net dynamic conductivity in optically or electrically pumped graphene. We demonstrate that the radiation absorption assisted by the carrier-carrier scattering can be stronger than the Drude absorption due to the carrier scattering on disorder. Since the intraband absorption of radiation effectively competes with its interband amplification, this can substantially affect the conditions of the negative dynamic conductivity in the pumped graphene and, hence, the interband terahertz and infrared lasing. We find the threshold values of the frequency and quasi-Fermi energy of nonequilibrium carriers corresponding to the onset of negative dynamic conductivity. The obtained results show that the effect of carrier-carrier scattering shifts the threshold frequency of the radiation amplification in pumped graphene to higher values. In particular, the negative dynamic conductivity is attainable at the frequencies above 6 THz in graphene on SiO2 substrates at room temperature. The threshold frequency can be decreased to markedly lower values in graphene structures with high-k substrates due to screening of the carrier-carrier scattering, particularly at lower temperatures.

cond-mat.mes-hall↗

arXiv2013

Quantum single electron solitons near metal surface

A possibility of a quantum single electron soliton (QSES) formation in structures with different dimensionality (0, 1, 2, and 3D) and spectrum (parabolic and linear) placed near metal surface is discussed. These solitons originate as solutions of the nonlinear Schrodinger equation allowing for interaction with image charges in metal. The binding energy of those quasi-particles could exceed the thermal energy at room temperature.

cond-mat.mes-hall↗