arXiv subjects

Dmitry Yu. Fedyanin

Publications and source records attributed to Dmitry Yu. Fedyanin.

11 recordsLinked to original sources

arXiv2024

Electrical excitation of color centers in phosphorus-doped diamond Schottky diodes

A robust quantum light source operating upon electrical injection at ambient conditions is desirable for practical implementation of quantum technologies, such as quantum key distribution or metrology. Color centers in diamond are promising candidates as they are photostable emitters at room and elevated temperatures. The possibility of their electrical excitation has already been demonstrated within p-i-n diodes. However, this requires the growth of complex diamond structures. In contrast to these conventional approaches, we demonstrate the emission of color centers under electrical pumping in a novel Schottky diode configuration based on hydrogen passivated n-type diamond, which holds promise for integrated single-photon emitting devices based on color centers in diamond.

physics.app-ph↗

arXiv2019

Superinjection in diamond p-i-n diodes: bright single-photon electroluminescence of color centers beyond the doping limit

Efficient generation of single photons on demand at a high repetition rate is a key to the practical realization of quantum-communication networks and optical quantum computations. Color centers in diamond are considered to be the most promising platform for building such single-photon sources owing to the outstanding emission properties of color centers at room temperature. However, their efficient electrical excitation remains a challenge due to the inability to create a high density of free electrons in diamond. Here, we show that using the self-gating effect in a diamond p-i-n diode, one can overcome the doping problem and inject four orders of magnitude more carriers into the i-region of the diamond diode than the doping of the n-region allows. This high density of free electrons can be efficiently used to boost the single-photon electroluminescence process and enhance the brightness of the single-photon source by more than three orders of magnitude. Moreover, we show that such a high single-photon emission rate can be achieved at exceptionally low injection current densities of only 0.001 A/mm$^2$, which creates the backbone for the development of low-power and cost-efficient diamond quantum optoelectronic devices for quantum information technologies.

physics.app-ph↗

arXiv2019

Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device

Colour centres with long-lived spins are established platforms for quantum sensing and quantum information applications. Colour centres exist in different charge states, each of them with distinct optical and spin properties. Application to quantum technology requires the capability to access and stabilize charge states for each specific task. Here, we investigate charge state manipulation of individual silicon vacancies in silicon carbide, a system which has recently shown a unique combination of long spin coherence time and ultrastable spin-selective optical transitions. In particular, we demonstrate charge state switching through the bias applied to the colour centre in an integrated silicon carbide opto-electronic device. We show that the electronic environment defined by the doping profile and the distribution of other defects in the device plays a key role for charge state control. Our experimental results and numerical modeling evidence that control of these complex interactions can, under certain conditions, enhance the photon emission rate. These findings open the way for deterministic control over the charge state of spin-active colour centres for quantum technology and provide novel techniques for monitoring doping profiles and voltage sensing in microscopic devices.

cond-mat.mes-hall↗

arXiv2019

Gate-tunable single-photon electroluminescence of color centers in silicon carbide

Electrically driven single-photon sources are essential for building compact, scalable and energy-efficient quantum information devices. Recently, color centers in SiC emerged as promising candidates for such nonclassical light sources. However, very little is known about how to control, dynamically tune and switch their single-photon electroluminescence (SPEL), which is required for efficient generation of single photons on demand. Here, we propose and theoretically demonstrate a concept of a gate-tunable single-photon emitting diode, which allows not only to dynamically tune the SPEL rate in the range from 0.6 to 40 Mcps but also to switch it on and off in only 0.2 ns.

physics.app-ph↗

arXiv2019

Superinjection of holes in homojunction diodes based on wide-bandgap semiconductors

Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance solid-state lighting by delivering novel light sources. However, electrical pumping of these devices is still a challenging problem. Many wide-bandgap semiconductor materials, such as SiC, GaN, AlN, ZnS, and Ga2O3, can be easily doped n-type, but their efficient p-type doping is extremely difficult. The lack of holes due to the high activation energy of acceptors greatly limits the performance and practical applicability of wide-bandgap semiconductor devices. Here, we study a novel effect which allows homojunction semiconductors devices, such as p-i-n diodes, to operate well above the limit imposed by doping of the p-type material. Using a rigorous numerical approach, we show that the density of injected holes can exceed the density of holes in the p-type injection layer by up to three orders of magnitude, which gives the possibility to significantly overcome the doping problem. We present a clear physical explanation of this unexpected feature of wide-bandgap semiconductor p-i-n diodes and closely examine it in 4H-SiC, 3C-SiC, AlN and ZnS structures. The predicted effect can be exploited to develop bright light emitting devices, especially electrically driven non-classical light sources based on color centers in SiC, AlN, ZnO and other wide-bandgap semiconductors.

physics.app-ph↗

arXiv2018

Superinjection in diamond homojunction P-I-N

Diamond and many newly emerged semiconductor materials show outstanding optical and magnetic properties. However, they cannot be as efficiently doped as silicon or gallium arsenide, which limits their practical applicability. Here, we report a superinjection effect in diamond p-i-n diodes, which gives the possibility to inject orders of magnitude more electrons into the i-region of the diode than the doping of the n-type injection layer allows. Moreover, we show that the efficiency of electron injection can be further improved using an i-p grating implemented in the i-region. The predicted superinjection effect enables to overcome fundamental limitations related to the high activation energy of donors in diamond and gives the possibility to design high-performance devices.

physics.app-ph↗

arXiv2018

Noise reduction in plasmonic amplifiers

Surface plasmon polariton amplification gives the possibility to overcome strong absorption in the metal and design truly nanoscale devices for on-chip photonic circuits. However, the process of stimulated emission in the gain medium is inevitably accompanied by spontaneous emission, which greatly increases the noise power. Here we present an efficient strategy for noise reduction in plasmonic amplifiers, which is based on gain redistribution along the amplifier. We show that even a very little gain redistribution (~3%) gives the possibility to increase the signal-to-noise ratio by about 100% and improve the bit error ratio by orders of magnitude.

physics.optics↗

arXiv2017

Dynamics of single-photon emission from electrically pumped color centers

Low-power, high-speed and bright electrically driven true single-photon sources, which are able to operate at room temperature, are vital for the practical realization of quantum communication networks and optical quantum computations. Color centers in semiconductors are currently the best candidates, however, in spite of their intensive study in the past decade, the behavior of color centers in electrically controlled systems is poorly understood. Here we present a physical model and establish a theoretical approach to address single-photon emission dynamics of electrically pumped color centers, which interprets experimental results. We support our analysis with self-consistent numerical simulations of a single-photon emitting diode based on a single nitrogen-vacancy center in diamond and predict the second-order autocorrelation function and other emission characteristics. Our theoretical findings demonstrate remarkable agreement with the experimental results and pave the way to the understanding of single-electron/single-photon processes in semiconductors.

quant-ph↗

arXiv2016

Ultrabright single-photon source on diamond with electrical pumping

The recently demonstrated electroluminescence of color centers in diamond makes them one of the best candidates for room temperature single-photon sources. However, the reported emission rates are far off what can be achieved by state-of-the-art electrically driven epitaxial quantum dots. Since the electroluminescence mechanism has not yet been elucidated, it is not clear to what extent the emission rate can be increased. Here we develop a theoretical framework to study single-photon emission from color centers in diamond under electrical pumping. The proposed model comprises electron and hole trapping and releasing, transitions between the ground and excited states of the color center as well as structural transformations of the center due to carrier trapping. It provides the possibility to predict both the photon emission rate and the wavelength of emitted photons. Self-consistent numerical simulations of the single-photon emitting diode based on the proposed model show that the photon emission rate can be as high as 100 kcounts s$^{-1}$ at standard conditions. In contrast to most optoelectronic devices, the emission rate steadily increases with the device temperature achieving of more than 100 Mcount s$^{-1}$ at 500 K, which is highly advantageous for practical applications. These results demonstrate the potential of color centers in diamond as electrically driven non-classical light emitters and provide a foundation for the design and development of single-photon sources for optical quantum computation and quantum communication networks operating at room and higher temperatures.

cond-mat.mes-hall↗

arXiv2015

Full loss compensation in hybrid plasmonic waveguides under electrical pumping

Surface plasmon polaritons (SPPs) give an opportunity to break the diffraction limit and design nanoscale optical components, however their practical implementation is hindered by high ohmic losses in a metal. Here, we propose a novel approach for efficient SPP amplification under electrical pumping in a deep-subwavelength metal-insulator-semiconductor waveguiding geometry and numerically demonstrate full compensation for the SPP propagation losses in the infrared at an exceptionally low pump current density of 0.8 kA/cm$^2$. This value is an order of magnitude lower than in the previous studies owing to the thin insulator layer between a metal and a semiconductor, which allows injection of minority carriers and blocks majority carriers reducing the leakage current to nearly zero. The presented results provide insight into lossless SPP guiding and development of future high dense nanophotonic and optoelectronic circuits.

cond-mat.mes-hall↗

arXiv2014

All-nanophotonic NEMS biosensor on a chip

Integrated chemical and biological sensors give advantages in cost, size and weight reduction and open new prospects for parallel monitoring and analysis. Biosensors based on nanoelectromechanical systems (NEMS) are the most attractive candidates for the integrated platform. However, actuation and transduction techniques (e.g. electrostatic, magnetomotive, thermal or piezoelectric) limit their operation to laboratory conditions. All-optical approach gives the possibility to overcome this problem, nevertheless, the existing schemes are either fundamentally macroscopic or excessively complicated and expensive in mass production. Here we propose a novel scheme of extremely compact NEMS biosensor monolithically integrated on a chip with all-nanophotonic transduction and actuation. It consists of the photonic waveguide and the nanobeam cantilever placed above the waveguide, both fabricated in the same CMOS-compatible process. Being in the near field of the strongly confined photonic mode, cantilever is efficiently actuated and its response is directly read out using the same optical waveguide, which results in a very high sensitivity and capability of single-molecule detection even in atmosphere.

physics.optics↗