arXiv subjects

Dmytro B. But

Publications and source records attributed to Dmytro B. But.

6 recordsLinked to original sources

arXiv2026

Improving terahertz-detection sensitivity of 8x8 FET arrays through liquid-nitrogen cooling in a compact low-noise cryostat

We show that the sensitivity of antenna-coupled field-effect transistors (FETs) to terahertz (THz) radiation improves continuously with decreasing temperature. The noise-equivalent power (NEP) of 540 GHz patch-antenna-coupled FETs decreases as temperature reduces to 20 K. We project NEP values approaching 1 to 2 pW/sqrt(Hz) under efficient power coupling conditions (e.g., using a superstrate Si-lens), which is comparable to superconducting niobium transition-edge sensors (TESs) at 4 K. Building on these findings, a compact, low-noise, liquid-nitrogen-cooled (77 K) FET-based direct (incoherent) THz-power sensing system} for spectroscopy applications was realized. Here, an 8x8 pixel-binned detector array fabricated in a commercial 65-nm Si-CMOS process, was optimized for operation in the 2.85 to 3.4 THz band. Characterization was performed in the focal plane of a 2.85-THz quantum-cascade laser delivering approx. 2~mW of THz power. A linear dynamic range exceeding 67 dB was achieved without saturation (for 1~Hz-detection bandwidth). The system provides a -3 dB readout bandwidth of 5 MHz, exceeding that of conventional thermal detectors (typically 1 kHz). Combined with its broad temperature operability 20 K to 300 K and compact design, the system is particularly well suited for space- and payload-constrained platforms such as balloon- and satellite-based missions, where deep cryogenic cooling is impractical.

physics.app-ph↗

arXiv2025

Extreme Terahertz Nonlinearity of AlGaN/GaN-based Grating-Gate Plasmonic Crystals

We present a novel approach to enhance THz nonlinearity by the resonant excitation of two-dimensional plasmons in grating-gate plasmonic crystals. Using a high-electric-field THz pump-THz probe technique, we investigate the nonlinear interaction of spectrally narrow THz pulses with plasmon oscillations in a two-dimensional electron gas on an AlGaN/GaN interface integrated with metallic grating. Nonlinear effects are observed as ultrafast, pump-induced changes in THz transmission, with relative transparency strongly dependent on plasmonic mode excitation and saturating at pump fluences of about 200 nJ cm-2. The maximal relative transparency, reaching 45 % at 350 nJ cm -2, occurs under resonant excitation of a localized plasmon mode at the strong electrostatic modulation of 2DEG concentration. Transient dynamics reveal ultrafast relaxation times of 15-20 ps, while the effects can be observed at elevated temperatures of up to 150 K. A nonlinear model of plasmonic crystal, based on finite-difference time-domain electrodynamic simulations coupled with viscous hydrodynamic electron transport model, elucidates key nonlinear mechanisms, including near-field effects under metallic gratings, electron heating, plasmon resonance broadening, and redshift. These results demonstrate that even conventional semiconductors such as AlGaN/GaN can achieve nonlinear THz responses comparable to or exceeding those of graphene, showing strong potential for ultrafast THz modulation and nonlinear photonics applications.

physics.optics↗

arXiv2024

Si Superstrate Lenses on Patch-Antenna-Coupled TeraFETs: NEP Optimization and Frequency Fine-Tuning

This paper presents a study on performance optimization and resonant frequency modification of terahertz detectors by the use of hyper-hemispherical silicon superstrate lenses. The detectors are patch-TeraFETs, i.e., field-effect transistors with monolithically integrated patch antennas fabricated with a commercial 65-nm CMOS foundry process and designed for an operation frequency of 580 GHz. We demonstrate a strong improvement of the optical noise-equivalent power optical NEP, referenced against the total radiation power) reaching a value of 16 pW/Hz^(1/2). We show, furthermore, that the resonance frequency can be efficiently fine-tuned by the choice of the material and the thickness of a dielectric layer placed between the transistor and the superstrate lens. The resonance frequency can be shifted by more than 15 % of the center frequency (up to 100 GHz for the 580 GHz devices). The design of the on-chip optics can be employed for post-fabrication tailoring of the detector's resonance frequency to target specific spectral positions.

physics.optics↗

arXiv2020

Room Temperature Amplification of Terahertz Radiation by Grating-Gate Graphene Structures

We report on experimental studies of terahertz (THz) radiation transmission through grating-gate graphene-channel transistor nanostructures and demonstrate room temperature THz radiation amplification stimulated by current-driven plasmon excitations. Specifically, with increase of the direct current (dc) under periodic charge density modulation, we observe a strong red shift of the resonant THz plasmon absorption, its complete bleaching, followed by the amplification and blue shift of the resonant plasmon frequency. Our results are, to the best of our knowledge, the first experimental observation of energy transfer from dc current to plasmons leading to THz amplification. We present a simple model allowing for the phenomenological description of the observed amplification phenomena. This model shows that in the presence of dc current the radiation-induced correction to dissipation is sensitive to the phase shift between THz oscillations of carrier density and drift velocity, and with increase of the current becomes negative, leading to amplification. The experimental results of this work as all obtained at room temperature, pave the way towards the new 2D plasmons based, voltage tuneable THz radiation amplifiers.

physics.app-ph↗

arXiv2018

Perspectives of HgTe Topological Insulators for Quantum Hall Metrology

We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one $d_c$, corresponding to the topological phase transition and graphene like band structure in view of their applications for Quantum Hall Effect (QHE) resistance standards. We show that in the case of inverted band ordering, the coexistence of conducting topological helical edge states together with QHE chiral states degrades the precision of the resistance quantization. By experimental and theoretical studies we demonstrate how one may reach very favorable conditions for the QHE resistance standards: low magnetic fields allowing to use permanent magnets ( B $\leq$ 1.4T) and simultaneously realtively high teperatures (liquid helium, T $\geq$ 1.3K). This way we show that HgTe QW based QHE resistance standards may replace their graphene and GaAs counterparts and pave the way towards large scale fabrication and applications of QHE metrology devices.

cond-mat.mes-hall↗

arXiv2014

High intensity study of THz detectors based on field effect transistors

Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm^2 was studied for Si metal-oxide-semiconductor field-effect transistors and InGaAs high electron mobility transistors. The photoresponse increased linearly with increasing radiation power up to kW/cm^2 range. The saturation of the photoresponse was observed for all investigated field effect transistors for intensities above several kW/cm^2. The observed signal saturation is explained by drain photocurrent saturation similar to saturation in direct currents output characteristics. The theoretical model of terahertz field effect transistor photoresponse at high intensity was developed. The model explains quantitatively experimental data both in linear and nonlinear (saturation) range. Our results show that dynamic range of field effect transistors is very high and can extend over more than six orderd of magnitudes of power densities (from 0.5 mW/cm^2 to 5 kW/cm^2).

cond-mat.mes-hall↗