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Dohyoung Kim

Publications and source records attributed to Dohyoung Kim.

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Unlocking the Edge deployment and ondevice acceleration of multi-LoRA enabled one-for-all foundational LLM

Deploying large language models (LLMs) on smartphones poses significant engineering challenges due to stringent constraints on memory, latency, and runtime flexibility. In this work, we present a hardware-aware framework for efficient on-device inference of a LLaMA-based multilingual foundation model supporting multiple use cases on Samsung Galaxy S24 and S25 devices with SM8650 and SM8750 Qualcomm chipsets respectively. Our approach integrates application-specific LoRAs as runtime inputs to a single frozen inference graph, enabling dynamic task switching without recompilation or memory overhead. We further introduce a multi-stream decoding mechanism that concurrently generates stylistic variations - such as formal, polite, or jovial responses - within a single forward pass, reducing latency by up to 6x. To accelerate token generation, we apply Dynamic Self-Speculative Decoding (DS2D), a tree-based strategy that predicts future tokens without requiring a draft model, yielding up to 2.3x speedup in decode time. Combined with quantization to INT4 and architecture-level optimizations, our system achieves 4-6x overall improvements in memory and latency while maintaining accuracy across 9 languages and 8 tasks. These results demonstrate practical feasibility of deploying multi-use-case LLMs on edge devices, advancing the commercial viability of Generative AI in mobile platforms.

cs.DC

Efficient conversion of orbital Hall current to spin current for spin-orbit torque switching

Spin Hall effect, an electric generation of spin current, allows for efficient control of magnetization. Recent theory revealed that orbital Hall effect creates orbital current, which can be much larger than spin Hall-induced spin current. However, orbital current cannot directly exert a torque on a ferromagnet, requiring a conversion process from orbital current to spin current. Here, we report two effective methods of the conversion through spin-orbit coupling engineering, which allows us to unambiguously demonstrate orbital-current-induced spin torque, or orbital Hall torque. We find that orbital Hall torque is greatly enhanced by introducing either a rare-earth ferromagnet Gd or a Pt interfacial layer with strong spin-orbit coupling in Cr/ferromagnet structures, indicating that the orbital current generated in Cr is efficiently converted into spin current in the Gd or Pt layer. Furthermore, we show that the orbital Hall torque can facilitate the reduction of switching current of perpendicular magnetization in spin-orbit-torque-based spintronic devices.

cond-mat.mtrl-sci