arXiv subjects

Domenic Prete

Publications and source records attributed to Domenic Prete.

5 recordsLinked to original sources

arXiv2026

A Superconducting Phase Transition Single-Electron Transistor

Quantum computers require fast and accurate methods for qubit state detection. Phase-transition sensors exploit the abrupt change between two physical states of a material to achieve enhanced sensitivity and have enabled advanced detectors for quantum technologies, such as superconducting nanowire single-photon detectors. However, this sensing principle has not yet been applied to semiconductor spin qubits. Here, we demonstrate a superconducting phase-transition radio-frequency single-electron transistor (PTSET), a charge sensor for semiconductor spin qubits whose response is enhanced by a superconducting-to-normal phase transition. The transition is engineered by linking the sensor current to a low-critical-current, high-kinetic-inductance inductor integrated into the radio-frequency matching network. We demonstrate improvements in sensitivity of one and two orders of magnitude over conventional rfSETs in the large- and small-signal regimes, respectively. Our results establish phase-transition sensing as a route towards ultrasensitive, integrated charge sensors for semiconductor quantum computing and point to broader applications, including cryogenic photon detection for radio astronomy.

quant-ph↗

arXiv2024

Engineering nanowire quantum dots with iontronics

Achieving stable, high-quality quantum dots has proven challenging within device architectures rooted in conventional solid-state device fabrication paradigms. In fact, these are grappled with complex protocols in order to balance ease of realization, scalability, and quantum transport properties. Here, we demonstrate a novel paradigm of semiconductor quantum dot engineering by exploiting ion gating. Our approach is found to enable the realization and control of a novel quantum dot system: the iontronic quantum dot. Clear Coulomb blockade peaks and their dependence on an externally applied magnetic field are reported, together with the impact of device architecture and confinement potential on quantum dot quality. Devices incorporating two identical quantum dots in series are realized, addressing the reproducibility of the developed approach. The iontronic quantum dot represents a novel class of zero-dimensional quantum devices engineered to overcome the need for thin dielectric layers, facilitating single-step device fabrication. Overall, the reported approach holds the potential to revolutionize the development of functional quantum materials and devices, driving rapid progress in solid state quantum technologies

cond-mat.mes-hall↗

arXiv2023

Rapid cryogenic characterisation of 1024 integrated silicon quantum dots

Quantum computers are nearing the thousand qubit mark, with the current focus on scaling to improve computational performance. As quantum processors grow in complexity, new challenges arise such as the management of device variability and the interface with supporting electronics. Spin qubits in silicon quantum dots are poised to address these challenges with their proven control fidelities and potential for compatibility with large-scale integration. Here, we demonstrate the integration of 1024 silicon quantum dots with on-chip digital and analogue electronics, all operating below 1 K. A high-frequency analogue multiplexer provides fast access to all devices with minimal electrical connections, enabling characteristic data across the quantum dot array to be acquired in just 5 minutes. We achieve this by leveraging radio-frequency reflectometry with state-of-the-art signal integrity, reaching a minimum integration time of 160 ps. Key quantum dot parameters are extracted by fast automated machine learning routines to assess quantum dot yield and understand the impact of device design. We find correlations between quantum dot parameters and room temperature transistor behaviour that may be used as a proxy for in-line process monitoring. Our results show how rapid large-scale studies of silicon quantum devices can be performed at lower temperatures and measurement rates orders of magnitude faster than current probing techniques, and form a platform for the future on-chip addressing of large scale qubit arrays.

quant-ph↗

arXiv2022

Giant reduction of thermal conductivity in twinning superlattice InAsSb nanowires

Semiconductor nanostructures hold great promise for high-efficiency waste heat recovery exploiting thermoelectric energy conversion, a technological breakthrough that could significantly contribute to providing environmentally friendly energy sources as well as in enabling the realization of self-powered biomedical and wearable devices. A crucial requirement in this field is the reduction of the thermal conductivity of the thermoelectric material without detrimentally affecting its electrical transport properties. In this work we demonstrate a drastic reduction of thermal conductivity in III-V semiconductor nanowires due to the presence of intentionally realized periodic crystal lattice twin planes. The electrical and thermal transport of these nanostructures, known as twinning superlattice nanowires, have been probed and compared with their twin-free counterparts, showing a one order of magnitude decrease of thermal conductivity while maintaining unaltered electrical transport properties, thus yielding a factor ten enhancement of the thermoelectric figure of merit, ZT. Our study reports for the first time the experimental measurement of electrical and thermal properties in twinning superlattice nanowires, which emerge as a novel class of nanomaterials for high efficiency thermoelectric energy harvesting.

cond-mat.mtrl-sci↗

arXiv2019

Thermoelectric conversion at 30K in InAs/InP nanowire quantum dots

We demonstrate high-temperature thermoelectric conversion in InAs/InP nanowire quantum dots by taking advantage of their strong electronic confinement. The electrical conductance G and the thermopower S are obtained from charge transport measurements and accurately reproduced with a theoretical model accounting for the multi-level structure of the quantum dot. Notably, our analysis does not rely on the estimate of co-tunnelling contributions since electronic thermal transport is dominated by multi-level heat transport. By taking into account two spin-degenerate energy levels we are able to evaluate the electronic thermal conductance K and investigate the evolution of the electronic figure of merit ZT as a function of the quantum dot configuration and demonstrate ZT ~ 35 at 30 K, corresponding to an electronic effciency at maximum power close to the Curzon- Ahlborn limit.

cond-mat.mes-hall↗