arXiv subjects

Domenica Convertino

Publications and source records attributed to Domenica Convertino.

At least 19 recordsLinked to original sources

arXiv2026

Ultrafast signatures of Dirac / flat-band hybrid states from time-resolved ARPES

Hybridization of highly itinerant Dirac electrons with localized flat-band states is predicted to yield emergent phenomena such as exotic heavy-fermion behaviour. Epitaxial graphene on two-dimensional adsorbate structures on SiC(0001), which host flat bands, offers a promising platform to explore these effects. However, direct experimental evidence of interlayer hybridization in such systems has so far been lacking. Here, we address this gap using time- and angle-resolved photoemission spectroscopy (trARPES) where interlayer hybridization manifests in three key observations: (1) accelerated Dirac-carrier relaxation arising from additional electronic and phononic decay channels provided by the flat-band subsystem, (2) transient charging of the Dirac cone enabled by direct optical excitation from the flat bands, and (3) ultrafast back-transfer of charge into the flat bands on timescales governed by the interlayer coupling strength. We further demonstrate that the degree of hybridization can be tuned via the atomic number of the atoms intercalated at the graphene-SiC interface, establishing a controllable platform for investigating exotic correlated ground states.

cond-mat.mtrl-sci↗

arXiv2026

Graphene lattice recoil in hard X-ray photoemission: Experiment and Theory

Hard-x-ray C 1s photoemission from monolayer graphene probes a regime in which nuclear recoil and intrinsic electronic asymmetry contribute on comparable energy scales to the observed spectral line shape. Here we combine experiment and modeling over the photon-energy range 0.8 keV--8 keV to resolve this interplay quantitatively. A graphene-specific implementation of the Fujikawa--Takata cumulant formalism, based on an anisotropic vibrational density of states constrained by first-principles phonon calculations, captures the expected recoil scaling with photon energy and emission geometry but fails to reproduce the pronounced asymmetric tails of the measured spectra. To overcome this limitation, we introduce an explicit electronic convolution model in which an intrinsic, photon-energy-independent electronic line shape extracted from near-recoilless 0.8 keV data is convolved with a phonon recoil kernel carrying the full dependence on photon energy and emission angle. This approach reproduces both the measured line-shape evolution and the observed centroid shifts across the explored energy range without refitting the spectra at higher photon energies. The results show that recoil in graphene cannot be described by a baseline treatment in which the phonon recoil kernel is combined only with symmetric lifetime broadening, but must be treated together with the intrinsic many-body electronic response of the C 1s line.

cond-mat.mtrl-sci↗

arXiv2026

Influence of twist angle on ultrafast charge separation in WS2-graphene heterostructures

Van der Waals (vdW) heterostructures, formed by stacking two-dimensional materials, offer highly tunable electronic and optical properties, with the twist angle between layers acting as a critical tuning parameter. While its impact on moir\'e patterns, band structure, and correlated states is well-established, the influence of twist angle on ultrafast charge transfer remains controversial. Here, we employ time- and angle-resolved photoemission spectroscopy (trARPES) to directly probe ultrafast charge transfer in epitaxially grown WS\textsubscript{2}-graphene heterostructures with twist angles of 0$^{\circ}$ and 30$^{\circ}$. Upon photoexcitation at $\hbar\omega = 3.1\,\mathrm{eV}$, we observe efficient charge separation at 0$^{\circ}$, while at 30$^{\circ}$, electron and hole transfer occur at similar rates. Our results highlight the crucial role of the twist angle in controlling charge separation efficiency, offering valuable insights for designing vdW heterostructures for applications in photovoltaics and optoelectronics.

cond-mat.mtrl-sci↗

arXiv2025

Scalable CVD Graphene Field-Effect Transistor Platform for Viral Detection: Application to COVID-19

The rapid and global spread of coronavirus disease 2019 (COVID-19), caused by the severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2), underscored the urgent need for fast, reliable, and adaptable diagnostic tools capable of responding to current and future viral threats. Early diagnosis is key to limiting transmission, and biosensors based on nanomaterials offer promising solutions for accurate and rapid bioanalyte detection. In this work, we present a scalable matrix of graphene-based field-effect transistors (GFETs) for the direct and rapid detection of the SARS-CoV-2 spike protein. High-quality graphene is functionalized in a single step with ACE2-His, enabling detection of the spike protein with a limit of detection as low as 1 fg/mL in phosphate-buffered saline (PBS). A robust statistical analysis, based on measurements from approximately 70 devices per analyte concentration, demonstrates the reproducibility and reliability of the platform. This label-free, scalable, and reproducible COVID-19 antigen sensor can be readily adapted to detect emerging SARS-CoV-2 variants or other viral pathogens, offering a flexible approach for future diagnostic applications.

physics.bio-ph↗

arXiv2025

Stability of Highly Hydrogenated Monolayer Graphene in Ultra-High Vacuum and in Air

The stability of hydrogenated monolayer graphene was investigated via X-ray photoemission spectroscopy (XPS) for two different environmental conditions: ultra-high vacuum (UHV) and ambient pressure. The study is carried out by measuring the C 1s line shape evolution for two hydrogenated samples one kept in the UHV chamber and the other progressively exposed to air. In particular, the $sp^3$ relative intensity in the C 1s core-level spectrum, represented by the area ratio $\frac{sp^3}{sp^2+sp^3}$, was used as a marker for the hydrogenation-level. After four months in UHV, it resulted almost unchanged within the experimental uncertainty. Thus, a long-term stability of hydrogenated monolayer graphene was found, that indicates this material as a good candidate for hydrogen (or tritium) storage as long as it is kept in vacuum. On the other hand, the C 1s spectrum of the sample exposed to air shows a significant oxidation. A rapid growth up to saturation of the carbon oxides was observed with a time constant $\tau$ = 2.8 $\pm$ 1.2 hours. Finally, the re-exposure of the oxidised sample to atomic hydrogen was found to be an effective method for the recovery of hydrogenated graphene. The CH stretching mode was measured via electron energy loss spectroscopy as direct footprint of hydrogenated graphene recovery.

cond-mat.mtrl-sci↗

arXiv2025

A Wide Optical-Gap in Fully $sp^3$-Like Hydrogenated Monolayer Graphene

A comprehensive spectroscopic characterisation of two highly hydrogenated monolayer graphene samples transferred onto nickel grids is reported. With X ray photoemission spectroscopy on the C 1s core-level, a 100$\%$ $sp^3$ profile was observed upon hydrogenation of a more $sp^3$-like initially defected graphene, while a flatter, more $sp^2$-arranged, graphene reached a 62$\%$ $sp^3$ saturation. Low-energy reflection electron energy-loss spectroscopy (EELS) corroborates these findings through the $\pi$-plasmon excitation quenching for the fully $sp^3$ sample and a significant reduction for the partially converted one. The extreme surface sensitivity of low-energy reflection EELS enables extraction of the optical band gap of the hydrogenated layer even on a metallic support, yielding values of 6.3 and 6.2 eV for the two samples. The C--H stretching vibrational mode is also resolved, providing a direct fingerprint of graphene--hydrogen bonding. Finally, valence-band measurements of the $62\%$ saturated sample suggest the coexistence of one-sided and two-sided hydrogenation morphologies.

cond-mat.mtrl-sci↗

arXiv2025

Influence of doping on non-equilibrium carrier dynamics in graphene

Controlling doping is key to optimizing graphene for high-speed electronic and optoelectronic devices. However, its impact on non-equilibrium carrier lifetimes remains debated. Here, we systematically tune the doping level of quasi-freestanding epitaxial graphene on SiC(0001) via potassium deposition and probe its ultrafast carrier dynamics directly in the band structure using time- and angle-resolved photoemission spectroscopy (trARPES). We find that increased doping lowers both the peak electronic temperature and the cooling rate of Dirac carriers, which we attribute to higher electronic heat capacity and reduced phonon emission phase space. Comparing quasi-freestanding graphene with graphene on a carbon buffer layer reveals faster relaxation in the latter, likely due to additional phonon modes being available for heat dissipation. These findings offer new insights for optimizing graphene in electronic and photonic technologies.

cond-mat.mes-hall↗

arXiv2023

Scalable High-Mobility Graphene/hBN Heterostructures

Graphene-hexagonal boron nitride (hBN) scalable heterostructures are pivotal for the development of graphene-based high-tech applications. In this work, we demonstrate the realization of high-quality graphene-hBN heterostructures entirely obtained with scalable approaches. hBN continuous films were grown via ion beam-assisted physical vapor deposition directly on commercially available $SiO_2/Si$ and used as receiving substrates for graphene single-crystal matrixes grown by chemical vapor deposition on copper. The structural, chemical, and electronic properties of the heterostructure were investigated by atomic force microscopy, Raman spectroscopy, and electrical transport measurements. We demonstrate graphene carrier mobilities exceeding $10,000 cm^2/Vs$ in ambient conditions, 30% higher than those directly measured on $SiO_{2}/Si$. We prove the scalability of our approach by measuring more than 100 transfer length method devices over a centimeter scale, which present an average carrier mobility of $7500 \pm 850 cm^{2}/Vs$. The reported high-quality all-scalable heterostructures are of relevance for the development of graphene-based high-performing electronic and optoelectronic applications.

physics.app-ph↗

arXiv2022

Observation of increasing bending rigidity of graphene with temperature

The mechanical properties of two-dimensional materials are important for a wide range of applications including composite and van der Waals-materials, flexible electronics and superconductivity. Several aspects are highly debated in the literature: For example, the theoretically predicted bending rigidity $\kappa$ at 0 K for quasi free-standing graphene varies from 0.8 to 1.6~eV, and there are predictions that it could either increase or decrease with temperature. Here we present an experimental study of the temperature-dependent bending rigidity $\kappa(T)$ of graphene. From the phonon dispersion relation measured with helium atom scattering for the out-of-plane acoustic (ZA) mode, we find $\kappa(T)$ to increase with sample temperature. We compare our experimental results with novel molecular dynamics (MD) simulations performed as part of this study as well as available literature data. The calculations reproduce the temperature trend of our experiments, but with a slightly weaker slope. A probable cause for the observed differences is the slight strain associated with experimental substrate supported graphene that is not present in the calculations.

cond-mat.mtrl-sci↗

arXiv2022

Hydrogen spillover and storage on graphene with single-site Ti catalysts

Hydrogen spillover and storage for single-site metal catalysts, including single-atom catalysts (SACs) and single nanocluster catalysts, have been elucidated for various supports but remain poorly understood for inert carbon supports. Here, we use synchrotron radiation-based methods to investigate the role of single-site Ti catalysts on graphene for hydrogen spillover and storage. Our in-situ angle-resolved photoemission spectra results demonstrate a bandgap opening and the X-ray absorption spectra reveal the formation of C-H bonds, both indicating the partial graphene hydrogenation. With increasing Ti deposition and H2 exposure, the Ti atoms tend to aggregate to form nanocluster catalysts and yield 13.5% sp3-hybridized carbon atoms corresponding to a hydrogen-storage capacity of 1.11 wt% (excluding the weight of the Ti nanoclusters [1]). Our results demonstrate how a simple spillover process at Ti SACs can lead to covalent hydrogen bonding on graphene, thereby providing a strategy for a rational design of carbon-supported single-site catalysts.

cond-mat.mtrl-sci↗

arXiv2020

Thermal stability of monolayer $WS_2$ in BEOL conditions

Monolayer tungsten disulfide ($WS_2$) has recently attracted large interest as a promising material for advanced electronic and optoelectronic devices such as photodetectors, modulators, and sensors. Since these devices can be integrated in a silicon (Si) chip via back-end-of-line (BEOL) processes, the stability of monolayer $WS_2$ in BEOL fabrication conditions should be studied. In this work, the thermal stability of monolayer single-crystal $WS_2$ at typical BEOL conditions is investigated; namely (i) heating temperature of $300$ $^\circ C$, (ii) pressures in the medium- ($10^{-3}$ mbar) and high- ($10^{-8}$ mbar) vacuum range; (iii) heating times from $30$ minutes to $20$ hours. Structural, optical and chemical analyses of $WS_2$ are performed via scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS). It is found that monolayer single-crystal $WS_2$ is intrinsically stable at these temperature and pressures, even after $20$ hours of thermal treatment. The thermal stability of $WS_2$ is also preserved after exposure to low-current electron beam ($12$ pA) or low-fluence laser ($0.9$ $mJ/μm^2$), while higher laser fluencies cause photo-activated degradation upon thermal treatment. These results are instrumental to define fabrication and in-line monitoring procedures that allow the integration of $WS_2$ in device fabrication flows without compromising the material quality.

cond-mat.mes-hall↗

arXiv2019

Superlubricity of epitaxial monolayer WS2 on graphene

We report on the superlubric sliding of monolayer tungsten disulfide (WS2) on epitaxial graphene (EG) on silicon carbide (SiC). WS2 single-crystalline flakes with lateral size of hundreds of nanometers are obtained via chemical vapor deposition (CVD) on EG and microscopic and diffraction analyses indicate that the WS2/EG stack is predominantly aligned with zero azimuthal rotation. Our experimental findings show that the WS2 flakes are prone to slide over graphene surfaces at room temperature when perturbed by a scanning probe microscopy (SPM) tip. Atomistic force field based molecular dynamics simulations indicate that through local physical deformation of the WS2 flake, the scanning tip releases enough energy to the flake to overcome the motion activation barrier and to trigger an ultra-low friction roto-translational displacement, that is superlubric. Experimental observations indicate that after the sliding, the WS2 flakes rest with a rotation of npi/3 with respect to graphene. Atomically resolved investigations show that the interface is atomically sharp and that the WS2 lattice is strain-free. These results help to shed light on nanotribological phenomena in van der Waals (vdW) heterostacks and suggest that the applicative potential of the WS2/graphene heterostructure can be extended by novel mechanical prospects.

cond-mat.mtrl-sci↗

arXiv2017

Peripheral neuron survival and outgrowth on graphene

Graphene displays properties which make it appealing for neuroregenerative medicine, yet its interaction with peripheral neurons has been scarcely investigated. Here, we culture on graphene two established models for peripheral neurons: PC12 cells and DRG primary neurons. We perform a nano-resolved analysis of polymeric coatings on graphene and combine optical microscopy and viability assays to assess the material cytocompatibility and influence on differentiation. We find that differentiated PC12 cells display a remarkably increased neurite length on graphene (up to 35%) with respect to controls. DRG primary neurons survive both on bare and coated graphene and present dense axonal networks.

physics.bio-ph↗

arXiv2016

MBE growth of self-assisted InAs nanowires on graphene

Self-assisted growth of InAs nanowires on graphene by molecular beam epitaxy is reported. Nanowires with diameter of ~50 nm and aspect ratio of up to 100 were achieved. The morphological and structural properties of the nanowires were carefully studied by changing the substrate from bilayer graphene through buffer layer to quasi-free-standing monolayer graphene. The positional relation of the InAs NWs with the graphene substrate was determined. A 30° orientation configuration of some of the InAs NWs is shown to be related to the surface corrugation of the graphene substrate. InAs NW-based devices for transport measurements were fabricated, and the conductance measurements showed a semi-ballistic behavior. In Josephson junction measurements in the non-linear regime, Multiple Andreev Reflections were observed, and an inelastic scattering length of about 900 nm was derived.

cond-mat.mtrl-sci↗

arXiv2016

Efficient n-type Doping in Epitaxial Graphene through Strong Lateral Orbital Hybridization of Ti Adsorbate

In recent years, various doping methods for epitaxial graphene have been demonstrated through atom substitution and adsorption. Here we observe by angle-resolved photoemission spectroscopy (ARPES) a coupling-induced Dirac cone renormalization when depositing small amounts of Ti onto epitaxial graphene on SiC. We obtain a remarkably high doping efficiency and a readily tunable carrier velocity simply by changing the amount of deposited Ti. First-principles theoretical calculations show that a strong lateral (non-vertical) orbital coupling leads to an efficient doping of graphene by hybridizing the 2pz orbital of graphene and the 3d orbitals of the Ti adsorbate, which attached on graphene without creating any trap/scattering states. This Ti-induced hybridization is adsorbate-specific and has major consequences for efficient doping as well as applications towards adsorbate-induced modification of carrier transport in graphene.

cond-mat.mes-hall↗

arXiv2016

Scalable synthesis of WS2 on graphene and h-BN: an all-2D platform for light-matter transduction

By exhibiting a measurable bandgap and exotic valley physics, atomically-thick tungsten disulfide (WS2) offers exciting prospects for optoelectronic applications. The synthesis of continuous WS2 films on other two-dimensional (2D) materials would greatly facilitate the implementation of novel all-2D photoactive devices. In this work we demonstrate the scalable growth of WS2 on graphene and hexagonal boron nitride (h-BN) via a chemical vapor deposition (CVD) approach. Spectroscopic and microscopic analysis reveal that the film is bilayer-thick, with local monolayer inclusions. Photoluminescence measurements show a remarkable conservation of polarization at room temperature peaking 74% for the entire WS2 film. Furthermore, we present a scalable bottom-up approach for the design of photoconductive and photoemitting patterns.

cond-mat.mtrl-sci↗

arXiv2016

Revealing the multi-bonding state between hydrogen and graphene-supported Ti clusters

Hydrogen adsorption on graphene-supported metal clusters has brought much controversy due to the complex nature of the bonding between hydrogen and metal clusters. The bond types of hydrogen and graphene-supported Ti clusters are experimentally and theoretically investigated. Transmission electron microscopy shows that Ti clusters of nanometer-size are formed on graphene. Thermal desorption spectroscopy captures three hydrogen desorption peaks from hydrogenated graphene-supported Ti clusters. First principle calculations also found three types of interaction: Two types of bonds with different partial ionic character and physisorption. The physical origin for this rests on the charge state of the Ti clusters: when Ti clusters are neutral, H2 is dissociated, and H forms bonds with the Ti cluster. On the other hand, H2 is adsorbed in molecular form on positively charged Ti clusters, resulting in physisorption. Thus, this work clarifies the bonding mechanisms of hydrogen on graphene-supported Ti clusters.

physics.chem-ph↗

arXiv2016

Rapid and catalyst-free CVD growth of graphene on hBN

Recently, hexagonal boron nitride (h-BN) has been shown to act as an ideal substrate to graphene by greatly improving the material transport properties thanks to its atomically flat surface, low interlayer electronic coupling and almost perfect reticular matching. Chemical vapour deposition (CVD) is presently considered the most scalable approach to grow graphene directly on h-BN. However, for the catalyst-free approach, poor control over the shape and crystallinity of the graphene grains and low growth rates are typically reported. In this work we investigate the crystallinity of differently shaped grains and identify a path towards a real van der Waals epitaxy of graphene on h-BN by adopting a catalyst-free CVD process. We demonstrate the polycrystalline nature of circular-shaped pads and attribute the stemming of different oriented grains to airborne contamination of the h-BN flakes. We show that single-crystal grains with six-fold symmetry can be obtained by adopting high hydrogen partial pressures during growth. Notably, growth rates as high as 100 nm/min are obtained by optimizing growth temperature and pressure. The possibility of synthesizing single-crystal graphene on h-BN with appreciable growth rates by adopting a simple CVD approach is a step towards an increased accessibility of this promising van der Waals heterostructure.

cond-mat.mtrl-sci↗