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Dominik Biscette

Publications and source records attributed to Dominik Biscette.

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Towards reliable electrical measurements of superconducting devices inside a transmission electron microscope

Correlating structure with electronic functionality is central to the engineering of quantum materials and devices whose properties depend sensitively on disorder. Transmission electron microscopy (TEM) offers high spatial resolution together with access to structural, electronic, and magnetic degrees of freedom. However, operando electrical transport measurements on functional quantum devices remain rare, particularly at liquid helium temperature. Here, we demonstrate electrical transport measurements of niobium nitride (NbN) devices inside a TEM using a continuous-flow liquid-helium-cooled sample holder. By optimizing a thermal radiation shield to limit radiation from the nearby pole pieces of the objective lens, we achieve an estimated base sample temperature of 8-9 K, as inferred from the superconducting transition temperatures of our devices. We find that both electron beam illumination and objective lens excitation perturb the superconducting state. In addition, we evaluate the imaging capabilities and stability of the sample holder at low temperature by imaging the magnetic domain structure of the van der Waals ferromagnet CrBr$_3$. Finally, we perform calculations that underscore the importance of cryo-shielding for minimizing thermal radiation onto the device. This capability enables correlative low-temperature TEM studies, in which structural, spectroscopic, and electrical transport data can be obtained from the same device, thereby providing a platform for probing the microscopic origins of quantum phenomena.

cond-mat.supr-con

Two-carrier Magnetoresistance: Applications to Ca$_3$Ru$_2$O$_7$

Ambipolar transport is a commonly occurring theme in semimetals and semiconductors. Here we present an analytical formulation of the conductivity for a two-band system. Electron and hole carrier densities and their respective conductivities are mapped into a two-dimensional unit-less phase space. Provided that one of the carrier densities is known, the dimensionless phase space can be probed through magnetoresistance measurements. This formulation of the two-band model for conductivity is applied to magnetoresistance experiments on Ca$_3$Ru$_2$O$_7$. While previous such measurements focused on the low-temperature limit, we cover a broad temperature range and find negative magnetoresistance in an intermediate interval below the electronic transition at 48 K. The low-temperature magnetoresistance in Ca$_3$Ru$_2$O$_7$ is consistent with a two-band structure. However, the model fails to describe the full temperature and magnetic field dependence. Negative magnetoresistance found in an intermediate temperature range is, for example, not captured by this model. We thus conclude that the electronic and magnetic structure in this intermediate temperature range render the system beyond the most simple two-band model.

cond-mat.str-el