arXiv subjects

Donald M. Evans

Publications and source records attributed to Donald M. Evans.

9 recordsLinked to original sources

arXiv2026

Universality of magnetic susceptibility in the conical state of kagome ferromagnet Fe$_3$Sn$_2$

We report universal behavior of the differential magnetic susceptibility (DMS) in the conical phase that mediates the spin-reorientation (SR) transition of the kagome ferromagnet Fe$_3$Sn$_2$. Within the SR temperature range, the DMS isotherms exhibit extremely narrow crossing regions, forming isosbestic points. Using an isosbestic-invariance analysis, we show that the isotherms collapse onto a single temperature-independent curve, revealing quadratic-in-temperature corrections to the susceptibility. Complementary field-dependent magnetic-force-microscopy measurements uncover evolution of spin textures from stripe-like domains at low fields to isolated bubble-like domains near the isosbestic field ($\sim 0.6$~T), a behavior not previously reported in bulk Fe$_3$Sn$_2$ within the conical state. These findings point to a universal mechanism for the emergence of complex magnetic textures near isosbestic points, driven by the competition between magnetocrystalline anisotropy, dipolar interactions, and external magnetic field.

cond-mat.mtrl-sci↗

arXiv2025

Spatially resolving superconductivity in type-II superconductors

Superconductivity is identified by the emergence of a macroscopic zero-resistance state, typically inferred from a vanishing four-probe voltage at finite current. That inference assumes spatially uniform conduction-e.g., at least one continuous superconducting path between the current leads and voltage electrodes that sample a finite potential gradient-and can fail if the drive current bypasses the electrodes or if narrow filaments short the current contacts. Here we introduce a methodology to test these assumptions in superconductors, by using spatially resolved measurements of local variations in dc using cryogenic conductive atomic-force microscopy (cAFM). Using Fe(Se,Te) as a model system, we find that despite bulk measurements consistent with a homogeneous superconducting state, the material exhibits a heterogeneous conducting landscape: micrometre-scale superconducting regions coexist with relatively insulating areas. We further show that cAFM resolves conductance fluctuations at 20 K (> TC) that vary between repeated scans, consistent with expectations for short-lived, pre-formed Cooper pairs in the BCS-BEC crossover regime. These results establish cAFM as a practical tool to validate assumptions underlying four-probe transport and underscore the need for direct spatial probes in materials whose macroscopic response can conceal nanoscale inhomogeneity. Accurate identification of macroscopic properties is critical for materials classes like superconductors that are defined by their macroscopic properties.

cond-mat.supr-con↗

arXiv2025

Local doping of an oxide semiconductor by voltage-driven splitting of anti-Frenkel defects

Layered oxides exhibit high ionic mobility and chemical flexibility, attracting interest as cathode materials for lithium-ion batteries and the pairing of hydrogen production and carbon capture. Recently, layered oxides emerged as highly tunable semiconductors. For example, by introducing anti-Frenkel defects, the electronic hopping conductance in hexagonal manganites was increased locally by orders of magnitude. Here, we demonstrate local acceptor and donor doping in Er(Mn,Ti)O$_3$, facilitated by the splitting of such anti-Frenkel defects under applied d.c. voltage. By combining density functional theory calculations, scanning probe microscopy, atom probe tomography, and scanning transmission electron microscopy, we show that the oxygen defects readily move through the layered crystal structure, leading to nano-sized interstitial-rich (p-type) and vacancy-rich (n-type) regions. The resulting pattern is comparable to dipolar npn-junctions and stable on the timescale of days. Our findings reveal the possibility of temporarily functionalizing oxide semiconductors at the nanoscale, giving additional opportunities for the field of oxide electronics and the development of transient electronics in general.

cond-mat.mtrl-sci↗

arXiv2023

Large ordered moment with strong easy-plane anisotropy and vortex-domain pattern in the kagome ferromagnet Fe$_3$Sn

We report the structural and magnetic properties of high-quality bulk single crystals of the kagome ferromagnet Fe$_3$Sn. The dependence of magnetisation on the magnitude and orientation of the external field reveals strong easy-plane type uniaxial magnetic anisotropy, which shows a monotonous increase from $K_1=-0.99\times 10^6 J/m^3$ at 300\,K to $-1.23\times10^6 J/m^3$ at 2\,K. Our \textit{ab initio} electronic structure calculations yield the value of total magnetic moment of about 6.9 $μ_B$/f.u. and a magnetocrystalline anisotropy energy density of 0.406\,meV/f.u. ($1.16\times10^6 J/m^3$) both being in good agreement with the experimental values. The self-consistent DFT computations for the components of the spin/orbital moments indicate that the small difference between the saturation magnetisations measured along and perpendicular to the kagome layers results from the subtle balance between the Fe and Sn spin/orbital moments on the different sites. In zero field, magnetic force microscopy reveals micrometer-scale magnetic vortices with weakly pinned cores that vanish at $\sim$3\,T applied perpendicular to the kagome plane. Our micromagnetic simulations, using the experimentally determined value of anisotropy, well reproduce the observed vortex-domain structure. The present study, in comparison with the easy-axis ferromagnet Fe$_3$Sn$_2$, shows that varying the stacking of kagome layers provides an efficient control over magnetic anisotropy in this family of Fe-based kagome magnets.

cond-mat.mtrl-sci↗

arXiv2022

Resolving structural changes and symmetry lowering in spinel FeCr2S4

The cubic spinel FeCr2S4 has been receiving immense research interest because of its emergent phases and the interplay of spin, orbital and lattice degrees of freedom. Despite the intense research, several fundamental questions are yet to be answered, such as the refinement of the crystal structure in the different magnetic and orbital ordered phases. Here, using high-resolution synchrotron powder diffraction on stoichiometric crystals of FeCr2S4 we resolved the long sought-after cubic to tetragonal transition at ~65 K, reducing the lattice symmetry to I41/amd. With further lowering the temperature, at ~9 K, the crystal structure becomes polar, hence the compound becomes multiferroic. The elucidation of the lattice symmetry throughout different phases of FeCr2S4 provides a basis for the understanding this enigmatic system and also highlights the importance of structural deformation in correlated materials.

cond-mat.mtrl-sci↗

arXiv2020

Contact-free reversible switching of improper ferroelectric domains by electron and ion irradiation

Focused ion beam (FIB) and scanning electron microscopy (SEM) are used to reversibly switch improper ferroelectric domains in the hexagonal manganite ErMnO$_3$. Surface charging is achieved by local ion (positive charging) and electron (positive and negative charging) irradiation, which allows controlled polarization switching without the need for electrical contacts. Polarization cycling reveals that the domain walls tend to return to the equilibrium configuration obtained in the as-grown state. The electric field response of sub-surface domains is studied by FIB cross-sectioning, revealing the 3D switching behavior. The results clarify how the polarization reversal in hexagonal manganites progresses at the level of domains, resolving both domain wall movements and the nucleation and growth of new domains. Our FIB-SEM based switching approach is applicable to all ferroelectrics where a sufficiently large electric field can be built up via surface charging, facilitating contact-free high-resolution studies of the domain and domain wall response to electric fields in 3D.

cond-mat.mtrl-sci↗

arXiv2020

Insulating improper ferroelectric domain walls as robust barrier layer capacitors

We report the dielectric properties of improper ferroelectric h-ErMnO$_3$. From the bulk characterisation we observe a temperature and frequency range with two distinct relaxation-like features, leading to high and even 'colossal' values for the dielectric permittivity. One feature trivially originates from the formation of a Schottky barrier at the electrode-sample interface, whereas the second one relates to an internal barrier layer capacitance (BLC). The calculated volume fraction of the internal BLC (of 8 %) is in good agreement with the observed volume fraction of insulating domain walls (DWs). While it is established that insulating DWs can give rise to high dielectric constants, studies typically focused on proper ferroelectrics where electric fields can remove the DWs. In h-ErMnO$_3$, by contrast, the insulating DWs are topologically protected, facilitating operation under substantially higher electric fields. Our findings provide the basis for a conceptually new approach to engineer materials exhibiting colossal dielectric permittivities using domain walls in improper ferroelecctrics with potential applications in electroceramic capacitors.

cond-mat.mtrl-sci↗

arXiv2016

Hydrodynamics of Domain Walls in Multiferroics: Impact on Memory Devices

We show that switching in ferroelectric lead germanate and lead iron tantalate zirconate titanate (PZTFT) does not resemble the equilibrium domain structure evolution of the Landau-Lifshitz-Kittel model but is instead highly nonequilibrium and similar, respectively, to the Richtmyer-Meshkov instability in liquids and the Helfrich-Hursault sliding instability in liquid crystals. The resulting nano-domain structures in PZTFT are circular or parabolic and involving folding bifurcations. These may have an undesirable impact on ferroelectric thin-film memoriesthat are also ferroelastic.

cond-mat.mtrl-sci↗

arXiv2016

The Synthesis, Structure and Electronic Properties of a Lead-Free Hybrid Inorganic-Organic Double Perovskite (MA)2KBiCl6 (MA = methylammonium)

In a search for Lead-free materials that could be used as alternatives to the hybrid perovskites,(MA)PbX3, in photovoltaic applications, we have discovered a hybrid double perovskite, (MA)2KBiCl6, which shows striking similarities to the lead analogues. Spectroscopic measurements and nanoindentation studies are combined with density functional calculations to reveal the properties of this interesting system.

cond-mat.mtrl-sci↗