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Donat J. As

Publications and source records attributed to Donat J. As.

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On the temperature dependence of the optical band gap in the material system of lithium niobate and lithium tantalate

Lithium niobate and lithium tantalate see widespread use in optics and electronics, and are increasingly used for cryogenic applications. Despite their broad deployment, their optical band gap and its relation to the crystal stoichiometry are not well characterised as a function of temperature. In this work, we study the optical absorption properties of congruent, stoichiometric, MgO-doped and Er-doped lithium niobate as well as congruent lithium tantalate across the temperature range between 7~K and 1000~K by means of optical transmission spectroscopy. Our results demonstrate that the difference of the optical band gap typically observed at room temperature between different stoichiometries is not primarily attributable to the intrinsic electronic structure, but rather to different electron-phonon couplings and the average phonon energies. Additionally, we exemplarily study the temperature shift of the 523 nm absorption line in Er-doped lithium niobate due to the increased interest in optically active dopants. To facilitate future analyses, we present the open-source software suite PhoQS-Treat (Tauc Regression Edge Analysis Tool), which enables automated Tauc regressions alongside additional analytical capabilities. This work advances the development of high-performance lithium niobate-based devices.

cond-mat.mtrl-sci

Femtosecond pump-probe absorption edge spectroscopy of cubic GaN

Time-dependent femtosecond pump-probe spectroscopic ellipsometry studies on zincblende gallium-nitride (zb-GaN) are performed and analyzed between 2.9-3.7eV. An ultra-fast change of the absorption onset (3.23eV for zb-GaN) is observed by investigating the imaginary part of the dielectric function. The 266nm (4.66eV) pump pulses induce a large free-carrier concentration up to $4\times 10^{20}$cm$^{-3}$, influencing the transition energy between conduction and valence bands due to many-body effects, like band filling and band gap renormalization, up to $\approx$500meV. Additionally, the absorption of the pump-beam creates a free-carrier profile within the 605nm zb-GaN layer. This leads to varying optical properties from sample surface to substrate, which are taken into account by grading analysis for an accurate description of the experimental data. A temporal resolution of 100fs allows in-depth investigations of occurring ultra-fast relaxation and recombination processes. We provide a quantitative description of the free-carrier concentration and absorption onset at the sample surface as a function of relaxation, recombination, and diffusion yielding a characteristic relaxation time of 0.19ps and a recombination time of 26.1ps.

cond-mat.mtrl-sci