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Dongchen Sui

Publications and source records attributed to Dongchen Sui.

4 recordsLinked to original sources

High-Efficiency Acousto-Optic Modulation on Non-Suspended Thin-Film Lithium Tantalate

Acousto-optic (AO) interactions provide a powerful interface between the microwave and optical domains, enabling functionalities such as optical switching, non-reciprocal propagation and efficient microwave-to-optical transduction. Integrated demonstrations to date have largely relied on thin-film lithium niobate (TFLN), which offers strong piezoelectric response and low optical loss performance. Here, we establish lithium tantalate on insulator (LTOI) as a scalable platform for integrated acousto-optics. LTOI combines intrinsically low birefringence, high optical damage threshold, strong electro-optic and Kerr nonlinearities, and superior acoustic quality factors with a mature high-volume manufacturing base. We demonstrate for the first time acousto-optic modulation on the LTOI platform. By exploiting the anisotropy of surface acoustic waves, we reveal a direct correlation between acousto-optic modulation efficiency and the electromechanical coupling coefficient of lithium tantalate. In particular, acoustic excitation along the crystal Z-axis enhances the higher-order R1 mode, yielding the highest modulation efficiency. Our Mach-Zehnder interferometers achieve a modulation efficiency of 0.68 $\mathrm{\mathbf{V \cdot cm}}$, while racetrack resonators reach 0.022 $\mathrm{\mathbf{V \cdot cm}}$ -representing, to the best of our knowledge, the lowest $\mathrm{V_\pi L}$ demonstrated in non-suspended ferroelectric platforms. This record performance directly enables microwave-to-optical conversion without suspended structures, establishing LTOI as a robust and scalable platform for integrated acousto-optics with broad applications in communications, signal processing, and quantum information technologies.

physics.optics

Monolithic integration of diverse crystalline thin films on diamond for near-junction thermal management

The pursuit of extreme miniaturization and high power in 6G RF front-ends has cast thermal dissipation as the central challenge. Here, we have demonstrated the monolithic integration of functionally distinct single-crystal thin films, including \b{eta}-Ga2O3, Si, GaN, and LiTaO3, onto a single diamond substrate using a multi-step transfer printing technique. Focusing on the critical \b{eta}-Ga2O3/diamond interface, we achieve an exceptional interfacial thermal conductance (ITC) of 149 MW m-2 K-1 through ultra-high vacuum (UHV) annealing, creating an atomically sharp interface featuring covalent bonding. Vibrational electron energy-loss spectroscopy (EELS) analysis combining with molecular dynamics (MD) simulations reveal that distinctive interfacial phonon modes at the \b{eta}-Ga2O3/diamond heterointerface dominate ultrahigh ITC. We experimentally demonstrate that by improving the ITC, the thermal resistance (Rth) of a diamond-based \b{eta}-Ga2O3 MOSFET is driven to a record-low value of 1.58 K mm W-1, underscoring the critical role of interface engineering in near-junction thermal management for diamond-integrated devices. This work demonstrates a scalable, diamond-based monolithic integration platform designed to solve the near-junction thermal challenges in high-power RF front-ends.

cond-mat.mtrl-sci

Large-scale quantum-dot-lithium-niobate hybrid integrated photonic circuits enabling on-chip quantum networking

Hybrid integrated quantum photonics combines solid-state artificial atoms with reconfigurable photonic circuits, enabling scalable chip-based quantum networks. Self-assembled quantum dots (QDs) are ideal for this goal due to their ability to generate highly indistinguishable single photons with exceptional brightness. Integrating QDs into low-loss photonic circuits can facilitate complex quantum networks by enabling entanglement transfer via two-photon interference. However, challenges such as limited scalability, spectral inhomogeneity, and quantum interference between independent sources remain. We present a hybrid photonic architecture that integrates QD-containing waveguides with low-loss lithium niobate (LN) circuits, incorporating 20 deterministic single-photon sources (SPSs). Using the piezoelectric properties of thin-film lithium niobate (TFLN), we achieve on-chip local spectral tuning of QD emissions by up to 7.7 meV,three orders of magnitude greater than the transform-limited linewidth. This approach enables on-chip quantum interference with a visibility of 0.73 between two spatially separated QD SPSs connected by 0.48 mm long waveguides, establishing a functional quantum network.The large-scale integration of spectrally tunable QD-based SPSs into low-loss LN circuits, combined with fast electro-optical switching, paves the way for compact, lightweight, and scalable photonic quantum networks.

quant-ph

Stable Soliton Microcomb Generation in X-cut Lithium Tantalate via Thermal-Assisted Photorefractive Suppression

Chip-based soliton frequency microcombs combine compact size, broad bandwidth, and high coherence, presenting a promising solution for integrated optical telecommunications, precision sensing, and spectroscopy. Recent progress in ferroelectric thin films, particularly thin-film Lithium niobate (LN) and thin-film Lithium tantalate (LT), has significantly advanced electro-optic (EO) modulation and soliton microcombs generation, leveraging their strong third-order nonlinearity and high Pockels coefficients. However, achieving soliton frequency combs in X-cut ferroelectric materials remains challenging due to the competing effects of thermo-optic and photorefractive phenomena. These issues hinder the simultaneous realization of soliton generation and high-speed EO modulation. Here, following the thermal-regulated carrier behaviour and auxiliary-laser-assisted approach, we propose a convenient mechanism to suppress both photorefractive and thermal dragging effect at once, and implement a facile method for soliton formation and its long-term stabilization in integrated X-cut LT microresonators for the first time. The resulting mode-locked states exhibit robust stability against perturbations, enabling new pathways for fully integrated photonic circuits that combine Kerr nonlinearity with high-speed EO functionality.

physics.optics