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Donghui Lu

Publications and source records attributed to Donghui Lu.

At least 55 records · Page 3Linked to original sources

Tunability of charge density wave in a magnetic kagome metal

The discovery of the charge density wave order (CDW) within a magnetically ordered phase in the kagome lattice FeGe has provided a promising platform to investigate intertwined degrees of freedom in kagome lattices. Recently, a method based on post-annealing has been suggested to manipulate the CDW order in kagome FeGe towards either long-range or suppressed orders. Here, we provide a comprehensive comparison of the experimentally measured electronic structures of FeGe crystals that have undergone different post-annealing procedures and demonstrate the remarkable effectiveness on tuning the CDW gap without strong perturbation on the underlying electronic structure. Moreover, we observe an additional low temperature transition that only appears in crystals with a long-range CDW order, which we associate with a lattice-spin coupled order. Our work indicates a likely strong sensitivity of the CDW order to disorder in FeGe, and provides evidence for strong coupling between the electronic, lattice, and spin degrees of freedom in this kagome magnet.

cond-mat.str-el↗

Charge order induced Dirac pockets in the nonsymmorphic crystal TaTe$_4$

The interplay between charge order (CO) and nontrivial band topology has spurred tremendous interest in understanding topological excitations beyond the single-particle description. In a quasi-one-dimensional nonsymmorphic crystal TaTe$_4$, the (2a$\times$2b$\times$3c) charge ordered ground state drives the system into a space group where the symmetry indicator features the emergence of Dirac fermions and unconventional double Dirac fermions. Using angle-resolved photoemission spectroscopy and first-principles calculations, we provide evidence of the CO induced Dirac fermion-related bands near the Fermi level. Furthermore, the band folding at the Fermi level is compatible with the new periodicity dictated by the CO, indicating that the electrons near the Fermi level follow the crystalline symmetries needed to host double Dirac fermions in this system.

cond-mat.str-el↗

Spontaneous gap opening and potential excitonic states in an ideal Dirac semimetal Ta$_2$Pd$_3$Te$_5$

The opening of an energy gap in the electronic structure generally indicates the presence of interactions. In materials with low carrier density and short screening length, long-range Coulomb interaction favors the spontaneous formation of electron-hole pairs, so-called excitons, opening an excitonic gap at the Fermi level. Excitonic materials host unique phenomenons associated with pair excitations. However, there is still no generally recognized single-crystal material with excitonic order, which is, therefore, awaited in condensed matter physics. Here, we show that excitonic states may exist in the quasi-one-dimensional material Ta$_2$Pd$_3$Te$_5$, which has an almost ideal Dirac-like band structure, with Dirac point located exactly at Fermi level. We find that an energy gap appears at 350 K, and it grows with decreasing temperature. The spontaneous gap opening is absent in a similar material Ta$_2$Ni$_3$Te$_5$. Intriguingly, the gap is destroyed by the potassium deposition on the crystal, likely due to extra-doped carriers. Furthermore, we observe a pair of in-gap flat bands, which is an analog of the impurity states in a superconducting gap. All these observations can be properly explained by an excitonic order, providing Ta$_2$Pd$_3$Te$_5$ as a new and promising candidate realizing excitonic states.

cond-mat.mtrl-sci↗

Determining the bulk and surface electronic structure of $α$-Sn/InSb(001) with spin- and angle-resolved photoemission spectroscopy

The surface and bulk states in topological materials have shown promise in many applications. Grey or $α$-Sn, the inversion symmetric analogue to HgTe, can exhibit a variety of these phases. However there is disagreement in both calculation and experiment over the exact shape of the bulk bands and the number and origin of the surface states. Using spin- and angle-resolved photoemission we investigate the bulk and surface electronic structure of $α$-Sn thin films on InSb(001) grown by molecular beam epitaxy. We find that there is no significant warping in the shapes of the bulk bands. We also observe the presence of only two surface states near the valence band maximum in both thin (13 bilayer) and thick (400 bilayer) films. In 50 bilayer films, these two surface states coexist with quantum well states. Surprisingly, both of these surface states are spin-polarized with orthogonal spin-momentum locking and opposite helicities. One of these states is the spin-polarized topological surface state and the other a spin resonance. Finally, the presence of another orthogonal spin-momentum locked topological surface state from a secondary band inversion is verified. Our work clarifies the electronic structure of $α$-Sn(001) such that better control of the electronic properties can be achieved. In addition, the presence of two spin-polarized surface states near the valence band maximum has important ramifications for the use of $α$-Sn in spintronics.

cond-mat.mtrl-sci↗

Two-Step Electronic Response to Magnetic Ordering in a van der Waals Ferromagnet

The two-dimensional (2D) material Cr$_2$Ge$_2$Te$_6$ is a member of the class of insulating van der Waals magnets. Here, using high resolution angle-resolved photoemission spectroscopy in a detailed temperature dependence study, we identify a clear response of the electronic structure to a dimensional crossover in the form of two distinct temperature scales marking onsets of modifications in the electronic structure. Specifically, we observe Te $p$-orbital-dominated bands to undergo changes at the Curie transition temperature T$_C$ while the Cr $d$-orbital-dominated bands begin evolving at a higher temperature scale. Combined with neutron scattering, density functional theory calculations, and Monte Carlo simulations, we find that the electronic system can be consistently understood to respond sequentially to the distinct temperatures at which in-plane and out-of-plane spin correlations exceed a characteristic length scale. Our findings reveal the sensitivity of the orbital-selective electronic structure for probing the dynamical evolution of local moment correlations in vdW insulating magnets.

cond-mat.str-el↗

Observation of Flat Bands and Dirac Cones in a Pyrochlore Lattice Superconductor

Emergent phases often appear when the electronic kinetic energy is comparable to the Coulomb interactions. One approach to seek material systems as hosts of such emergent phases is to realize localization of electronic wavefunctions due to the geometric frustration inherent in the crystal structure, resulting in flat electronic bands. Recently, such efforts have found a wide range of exotic phases in the two-dimensional kagome lattice, including magnetic order, time-reversal symmetry breaking charge order, nematicity, and superconductivity. However, the interlayer coupling of the kagome layers disrupts the destructive interference needed to completely quench the kinetic energy. Here we demonstrate that an interwoven kagome network-a pyrochlore lattice-can host a three dimensional (3D) localization of electron wavefunctions. Meanwhile, the nonsymmorphic symmetry of the pyrochlore lattice guarantees all band crossings at the Brillouin zone X point to be 3D gapless Dirac points, which was predicted theoretically but never yet observed experimentally. Through a combination of angle-resolved photoemission spectroscopy, fundamental lattice model and density functional theory calculations, we investigate the novel electronic structure of a Laves phase superconductor with a pyrochlore sublattice, CeRu$_2$. We observe flat bands originating from both the Ce 4$f$ orbitals as well as from the 3D destructive interference of the Ru 4$d$ orbitals. We further observe the nonsymmorphic symmetry-protected 3D gapless Dirac cones at the X point. Our work establishes the pyrochlore structure as a promising lattice platform to realize and tune novel emergent phases intertwining topology and many-body interactions.

cond-mat.str-el↗

Spectral Evidence for Local-Moment Ferromagnetism in van der Waals Metals Fe$_3$GaTe$_2$ and Fe$_3$GeTe$_2$

Magnetism in two-dimensional (2D) materials has attracted considerable attention recently for both fundamental understanding of magnetism and their tunability towards device applications. The isostructural Fe$_3$GeTe$_2$ and Fe$_3$GaTe$_2$ are two members of the Fe-based van der Waals (vdW) ferromagnet family, but exhibit very different Curie temperatures (T$_C$) of 210 K and 360 K, respectively. Here, by using angle-resolved photoemission spectroscopy and density functional theory, we systematically compare the electronic structures of the two compounds. Qualitative similarities in the Fermi surface can be found between the two compounds, with expanded hole pockets in Fe$_3$GaTe$_2$ suggesting additional hole carriers compared to Fe$_3$GeTe$_2$. Interestingly, we observe no band shift in Fe$_3$GaTe$_2$ across its T$_C$ of 360 K, compared to a small shift in Fe$_3$GeTe$_2$ across its T$_C$ of 210 K. The weak temperature-dependent evolution strongly deviates from the expectations of an itinerant Stoner mechanism. Our results suggest that itinerant electrons have minimal contributions to the enhancement of T$_C$ in Fe$_3$GaTe$_2$ compared to Fe$_3$GeTe$_2$, and that the nature of ferromagnetism in these Fe-based vdW ferromagnets must be understood with considerations of the electron correlations.

cond-mat.str-el↗

Growth and characterization of $α$-Sn thin films on In- and Sb-rich reconstructions of InSb(001)

$α$-Sn thin films can exhibit a variety of topologically non-trivial phases. Both studying the transitions between these phases and making use of these phases in eventual applications requires good control over the electronic and structural quality of $α$-Sn thin films. $α$-Sn growth on InSb often results in out-diffusion of indium, a p-type dopant. By growing $α$-Sn via molecular beam epitaxy on the Sb-rich c(4$\times$4) surface reconstruction of InSb(001) rather than the In-rich c(8$\times$2), we demonstrate a route to substantially decrease and minimize this indium incorporation. The reduction in indium concentration allows for the study of the surface and bulk Dirac nodes in $α$-Sn via angle-resolved photoelectron spectroscopy without the common approaches of bulk doping or surface dosing, simplifying topological phase identification. The lack of indium incorporation is verified in angle-resolved and -integrated ultraviolet photoelectron spectroscopy as well as in clear changes in the Hall response.

cond-mat.mtrl-sci↗

Massive topological edge channels in three-dimensional topological materials induced by extreme surface anisotropy

A two-dimensional quantum spin Hall insulator exhibits one-dimensional gapless spin-filtered edge channels allowing for dissipationless transport of charge and spin. However, the sophisticated fabrication requirement of two-dimensional materials and the low capacity of one-dimensional channels hinder the broadening applications. We introduce a method to manipulate a three-dimensional topological material to host a large number of one-dimensional topological edge channels utilizing surface anisotropy. Taking ZrTe5 as a model system, we realize a highly anisotropic surface due to the synergistic effect of the lattice geometry and Coulomb interaction, and achieve massive one-dimensional topological edge channels -- confirmed by electronic characterization using angle-resolved photoemission spectroscopy, in combination with first-principles calculations. Our work provides a new avenue to engineer the topological properties of three-dimensional materials through nanoscale tunning of surface morphology and opens up a promising prospect for the development of low-power-consumption electronic nano devices based on one-dimensional topological edge channels.

cond-mat.mes-hall↗

Non-Fermi liquid behavior in a correlated flatband pyrochlore lattice

Electronic correlation effects are manifested in quantum materials when either the onsite Coulomb repulsion is large or the electron kinetic energy is small. The former is the dominant effect in the cuprate superconductors or heavy fermion systems while the latter in twisted bilayer graphene or geometrically frustrated metals. However, the simultaneous cooperation of both effects in the same quantum material--the design principle to produce a correlated topological flat bands pinned at the Fermi level--remains rare. Here, using angle-resolved photoemission spectroscopy, we report the observation of a flat band at the Fermi level in a 3$d$ pyrochlore metal CuV$_2$S$_4$. From a combination of first-principles calculations and slave-spin calculations, we understand the origin of this band to be a destructive quantum-interference effect associated with the V pyrochlore sublattice and further renormalization to the Fermi level by electron interactions in the partially filled V $t_{2g}$ orbitals. As a result, we find transport behavior that indicates a deviation from Fermi-liquid behavior as well as a large Sommerfeld coefficient. Our work demonstrates the pathway into correlated topology by constructing and pinning correlated flat bands near the Fermi level out of a pure $d$-electron system by the combined cooperation of local Coulomb interactions and geometric frustration in a pyrochlore lattice system.

cond-mat.str-el↗

Potential Lifshitz transition at optimal substitution in nematic pnictide Ba$_{1-x}$Sr$_x$Ni$_2$As$_2$

BaNi$_2$As$_2$ is a structural analog of the pnictide superconductor BaFe$_2$As$_2$, which, like the iron-based superconductors, hosts a variety of ordered phases including charge density waves (CDWs), electronic nematicity, and superconductivity. Upon isovalent Sr substitution on the Ba site, the charge and nematic orders are suppressed, followed by a sixfold enhancement of the superconducting transition temperature ($T_c$). To understand the mechanisms responsible for enhancement of $T_c$, we present high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements of the Ba$_{1-x}$Sr$_{x}$Ni$_2$As$_2$ series, which agree well with our density functional theory (DFT) calculations throughout the substitution range. Analysis of our ARPES-validated DFT results indicates a Lifshitz transition and reasonably nested electron and hole Fermi pockets near optimal substitution where $T_c$ is maximum. These nested pockets host Ni $d_{xz}$/$d_{yz}$ orbital compositions, which we associate with the enhancement of nematic fluctuations, revealing unexpected connections to the iron-pnictide superconductors. This gives credence to a scenario in which nematic fluctuations drive an enhanced $T_c$.

cond-mat.supr-con↗

From Stoner to Local Moment Magnetism in Atomically Thin Cr2Te3

The field of two-dimensional (2D) ferromagnetism has been proliferating over the past few years, with ongoing interests in basic science and potential applications in spintronic technology. However, a high-resolution spectroscopic study of the 2D ferromagnet is still lacking due to the small size and air sensitivity of the exfoliated nanoflakes. Here, we report a thickness-dependent ferromagnetism in epitaxially grown Cr2Te3 thin films and investigate the evolution of the underlying electronic structure by synergistic angle-resolved photoemission spectroscopy, scanning tunneling microscopy, x-ray absorption spectroscopy, and first-principle calculations. A conspicuous ferromagnetic transition from Stoner to Heisenberg-type is directly observed in the atomically thin limit, indicating that dimensionality is a powerful tuning knob to manipulate the novel properties of 2D magnetism. Monolayer Cr2Te3 retains robust ferromagnetism, but with a suppressed Curie temperature, due to the drastic drop in the density of states near the Fermi level. Our results establish atomically thin Cr2Te3 as an excellent platform to explore the dual nature of localized and itinerant ferromagnetism in 2D magnets.

cond-mat.mtrl-sci↗

Discovery of Charge Order in the Transition Metal Dichalcogenide Fe$_{x}$NbS$_2$

The Fe intercalated transition metal dichalcogenide (TMD), Fe$_{1/3}$NbS$_2$, exhibits remarkable resistance switching properties and highly tunable spin ordering phases due to magnetic defects. We conduct synchrotron X-ray scattering measurements on both under-intercalated ($x$ = 0.32) and over-intercalated ($x$ = 0.35) samples. We discover a new charge order phase in the over-intercalated sample, where the excess Fe atoms lead to a zigzag antiferromagnetic order. The agreement between the charge and magnetic ordering temperatures, as well as their intensity relationship, suggests a strong magnetoelastic coupling as the mechanism for the charge ordering. Our results reveal the first example of a charge order phase among the intercalated TMD family and demonstrate the ability to stabilize charge modulation by introducing electronic correlations, where the charge order is absent in bulk 2H-NbS$_2$ compared to other pristine TMDs.

cond-mat.str-el↗

Reversible Non-Volatile Electronic Switching in a Near Room Temperature van der Waals Ferromagnet

The ability to reversibly toggle between two distinct states in a non-volatile method is important for information storage applications. Such devices have been realized for phase-change materials, which utilizes local heating methods to toggle between a crystalline and an amorphous state with distinct electrical properties. To expand such kind of switching between two topologically distinct phases requires non-volatile switching between two crystalline phases with distinct symmetries. Here we report the observation of reversible and non-volatile switching between two stable and closely-related crystal structures with remarkably distinct electronic structures in the near room temperature van der Waals ferromagnet Fe$_{5-δ}$GeTe$_2$. From a combination of characterization techniques we show that the switching is enabled by the ordering and disordering of an Fe site vacancy that results in distinct crystalline symmetries of the two phases that can be controlled by a thermal annealing and quenching method. Furthermore, from symmetry analysis as well as first principle calculations, we provide understanding of the key distinction in the observed electronic structures of the two phases: topological nodal lines compatible with the preserved global inversion symmetry in the site-disordered phase, and flat bands resulting from quantum destructive interference on a bipartite crystaline lattice formed by the presence of the site order as well as the lifting of the topological degeneracy due to the broken inversion symmetry in the site-ordered phase. Our work not only reveals a rich variety of quantum phases emergent in the metallic van der Waals ferromagnets due to the presence of site ordering, but also demonstrates the potential of these highly tunable two-dimensional magnets for memory and spintronics applications.

cond-mat.str-el↗

A unique van Hove singularity in kagome superconductor CsV$_{3-x}$Ta$_x$Sb$_5$ with enhanced superconductivity

Van Hove singularity (VHS) has been considered as a driving source for unconventional superconductivity. A VHS in two-dimensional (2D) materials consists of a saddle point connecting electron-like and hole-like bands. In a rare case, when a VHS appears at Fermi level, both electron-like and hole-like conduction can coexist, giving rise to an enhanced density of states as well as an attractive component of Coulomb interaction for unconventional electronic pairing. However, this van Hove scenario is often destroyed by an incorrect chemical potential or competing instabilities. Here, by using angle-resolved photoemission measurements, we report the observation of a VHS perfectly aligned with the Fermi level in a kagome superconductor CsV$_{3-x}$Ta$_x$Sb$_5$ (x~0.4), in which a record-high superconducting transition temperature is achieved among all the current variants of AV$_3$Sb$_5$ (A=Cs, Rb, K) at ambient pressure. Doping dependent measurements reveal the important role of van Hove scenario in boosting superconductivity, and spectroscopic-imaging scanning tunneling microscopy measurements indicate a distinct superconducting state in this system.

cond-mat.supr-con↗

Kramers nodal lines and Weyl fermions in SmAlSi

Kramers nodal lines (KNLs) have recently been proposed theoretically as a special type of Weyl line degeneracy connecting time-reversal invariant momenta. KNLs are robust to spin orbit coupling and are inherent to all non-centrosymmetric achiral crystal structures, leading to unusual spin, magneto-electric, and optical properties. However, their existence in in real quantum materials has not been experimentally established. Here we gather the experimental evidence pointing at the presence of KNLs in SmAlSi, a non-centrosymmetric metal that develops incommensurate spin density wave order at low temperature. Using angle-resolved photoemission spectroscopy, density functional theory calculations, and magneto-transport methods, we provide evidence suggesting the presence of KNLs, together with observing Weyl fermions under the broken inversion symmetry in the paramagnetic phase of SmAlSi. We discuss the nesting possibilities regarding the emergent magnetic orders in SmAlSi. Our results provide a solid basis of experimental observations for exploring correlated topology in SmAlSi.

cond-mat.mtrl-sci↗

Tuning the Band Topology of GdSb by Epitaxial Strain

Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of interchanged band order in RE-Vs due to strain. This work studies the evolution of band topology in biaxially strained GdSb (001) epitaxial films using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). We find that biaxial strain continuously tunes the electronic structure from topologically trivial to nontrivial, reducing the gap between the hole and the electron bands dispersing along the [001] direction. The conduction and valence band shifts seen in DFT and ARPES measurements are explained by a tight-binding model that accounts for the orbital symmetry of each band. Finally, we discuss the effect of biaxial strain on carrier compensation and magnetic ordering temperature.

cond-mat.mtrl-sci↗

Role of electron-phonon coupling in excitonic insulator candidate Ta2NiSe5

Electron-hole bound pairs, or excitons, are common excitations in semiconductors. They can spontaneously form and ``condense'' into a new insulating ground state -- the so-called excitonic insulator -- when the energy of electron-hole Coulomb attraction exceeds the band gap. In the presence of electron-phonon coupling, a periodic lattice distortion often concomitantly occurs with this exciton condensation. However, similar structural transition can also be induced by electron-phonon coupling itself, therefore hindering the clean identification of bulk excitonic insulators based on reductionistic reasoning (e.g. which instability is the ``driving force'' of the phase transition). Using high-resolution synchrotron x-ray diffraction and angle-resolved photoemission spectroscopy techniques, we identify key electron-phonon coupling effects in a leading excitonic insulator candidate Ta2NiSe5. These include an extensive unidirectional lattice fluctuation and an electronic pseudogap in the normal state, as well as a negative electronic compressibility in the charge-doped broken-symmetry state. In combination with first principles and model calculations, we determine a minimal lattice model and the corresponding interaction parameters that capture the experimental observations. More importantly, we show how the Coulomb and electron-phonon coupling effects can be separated on the level of lattice model, and demonstrate a general framework beyond the reductionist approach in the investigation of correlated systems with intertwined orders.

cond-mat.str-el↗