arXiv subjects

Donghyuk Lee

Publications and source records attributed to Donghyuk Lee.

24 records · Page 2Linked to original sources

arXiv2016

Adaptive-Latency DRAM (AL-DRAM)

This paper summarizes the idea of Adaptive-Latency DRAM (AL-DRAM), which was published in HPCA 2015. The key goal of AL-DRAM is to exploit the extra margin that is built into the DRAM timing parameters to reduce DRAM latency. The key observation is that the timing parameters are dictated by the worst-case temperatures and worst-case DRAM cells, both of which lead to small amount of charge storage and hence high access latency. One can therefore reduce latency by adapting the timing parameters to the current operating temperature and the current DIMM that is being accessed. Using an FPGA-based testing platform, our work first characterizes the extra margin for 115 DRAM modules from three major manufacturers. The experimental results demonstrate that it is possible to reduce four of the most critical timing parameters by a minimum/maximum of 17.3%/54.8% at 55C while maintaining reliable operation. AL-DRAM adaptively selects between multiple different timing parameters for each DRAM module based on its current operating condition. AL-DRAM does not require any changes to the DRAM chip or its interface; it only requires multiple different timing parameters to be specified and supported by the memory controller. Real system evaluations show that AL-DRAM improves the performance of memory-intensive workloads by an average of 14% without introducing any errors.

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arXiv2016

RowHammer: Reliability Analysis and Security Implications

As process technology scales down to smaller dimensions, DRAM chips become more vulnerable to disturbance, a phenomenon in which different DRAM cells interfere with each other's operation. For the first time in academic literature, our ISCA paper exposes the existence of disturbance errors in commodity DRAM chips that are sold and used today. We show that repeatedly reading from the same address could corrupt data in nearby addresses. More specifically: When a DRAM row is opened (i.e., activated) and closed (i.e., precharged) repeatedly (i.e., hammered), it can induce disturbance errors in adjacent DRAM rows. This failure mode is popularly called RowHammer. We tested 129 DRAM modules manufactured within the past six years (2008-2014) and found 110 of them to exhibit RowHammer disturbance errors, the earliest of which dates back to 2010. In particular, all modules from the past two years (2012-2013) were vulnerable, which implies that the errors are a recent phenomenon affecting more advanced generations of process technology. Importantly, disturbance errors pose an easily-exploitable security threat since they are a breach of memory protection, wherein accesses to one page (mapped to one row) modifies the data stored in another page (mapped to an adjacent row).

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arXiv2016

Tiered-Latency DRAM (TL-DRAM)

This paper summarizes the idea of Tiered-Latency DRAM, which was published in HPCA 2013. The key goal of TL-DRAM is to provide low DRAM latency at low cost, a critical problem in modern memory systems. To this end, TL-DRAM introduces heterogeneity into the design of a DRAM subarray by segmenting the bitlines, thereby creating a low-latency, low-energy, low-capacity portion in the subarray (called the near segment), which is close to the sense amplifiers, and a high-latency, high-energy, high-capacity portion, which is farther away from the sense amplifiers. Thus, DRAM becomes heterogeneous with a small portion having lower latency and a large portion having higher latency. Various techniques can be employed to take advantage of the low-latency near segment and this new heterogeneous DRAM substrate, including hardware-based caching and software based caching and memory allocation of frequently used data in the near segment. Evaluations with simple such techniques show significant performance and energy-efficiency benefits.

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arXiv2016

Reducing Performance Impact of DRAM Refresh by Parallelizing Refreshes with Accesses

Modern DRAM cells are periodically refreshed to prevent data loss due to leakage. Commodity DDR DRAM refreshes cells at the rank level. This degrades performance significantly because it prevents an entire rank from serving memory requests while being refreshed. DRAM designed for mobile platforms, LPDDR DRAM, supports an enhanced mode, called per-bank refresh, that refreshes cells at the bank level. This enables a bank to be accessed while another in the same rank is being refreshed, alleviating part of the negative performance impact of refreshes. However, there are two shortcomings of per-bank refresh. First, the per-bank refresh scheduling scheme does not exploit the full potential of overlapping refreshes with accesses across banks because it restricts the banks to be refreshed in a sequential round-robin order. Second, accesses to a bank that is being refreshed have to wait. To mitigate the negative performance impact of DRAM refresh, we propose two complementary mechanisms, DARP (Dynamic Access Refresh Parallelization) and SARP (Subarray Access Refresh Parallelization). The goal is to address the drawbacks of per-bank refresh by building more efficient techniques to parallelize refreshes and accesses within DRAM. First, instead of issuing per-bank refreshes in a round-robin order, DARP issues per-bank refreshes to idle banks in an out-of-order manner. Furthermore, DARP schedules refreshes during intervals when a batch of writes are draining to DRAM. Second, SARP exploits the existence of mostly-independent subarrays within a bank. With minor modifications to DRAM organization, it allows a bank to serve memory accesses to an idle subarray while another subarray is being refreshed. Extensive evaluations show that our mechanisms improve system performance and energy efficiency compared to state-of-the-art refresh policies and the benefit increases as DRAM density increases.

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arXiv2015

Simultaneous Multi Layer Access: A High Bandwidth and Low Cost 3D-Stacked Memory Interface

Limited memory bandwidth is a critical bottleneck in modern systems. 3D-stacked DRAM enables higher bandwidth by leveraging wider Through-Silicon-Via (TSV) channels, but today's systems cannot fully exploit them due to the limited internal bandwidth of DRAM. DRAM reads a whole row simultaneously from the cell array to a row buffer, but can transfer only a fraction of the data from the row buffer to peripheral IO circuit, through a limited and expensive set of wires referred to as global bitlines. In presence of wider memory channels, the major bottleneck becomes the limited data transfer capacity through these global bitlines. Our goal in this work is to enable higher bandwidth in 3D-stacked DRAM without the increased cost of adding more global bitlines. We instead exploit otherwise-idle resources, such as global bitlines, already existing within the multiple DRAM layers by accessing the layers simultaneously. Our architecture, Simultaneous Multi Layer Access (SMLA), provides higher bandwidth by aggregating the internal bandwidth of multiple layers and transferring the available data at a higher IO frequency. To implement SMLA, simultaneous data transfer from multiple layers through the same IO TSVs requires coordination between layers to avoid channel conflict. We first study coordination by static partitioning, which we call Dedicated-IO, that assigns groups of TSVs to each layer. We then provide a simple, yet sophisticated mechanism, called Cascaded-IO, which enables simultaneous access to each layer by time-multiplexing the IOs. By operating at a frequency proportional to the number of layers, SMLA provides a higher bandwidth (4X for a four-layer stacked DRAM). Our evaluations show that SMLA provides significant performance improvement and energy reduction (55%/18% on average for multi-programmed workloads, respectively) over a baseline 3D-stacked DRAM with very low area overhead.

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arXiv2015

The Blacklisting Memory Scheduler: Balancing Performance, Fairness and Complexity

In a multicore system, applications running on different cores interfere at main memory. This inter-application interference degrades overall system performance and unfairly slows down applications. Prior works have developed application-aware memory schedulers to tackle this problem. State-of-the-art application-aware memory schedulers prioritize requests of applications that are vulnerable to interference, by ranking individual applications based on their memory access characteristics and enforcing a total rank order. In this paper, we observe that state-of-the-art application-aware memory schedulers have two major shortcomings. First, such schedulers trade off hardware complexity in order to achieve high performance or fairness, since ranking applications with a total order leads to high hardware complexity. Second, ranking can unfairly slow down applications that are at the bottom of the ranking stack. To overcome these shortcomings, we propose the Blacklisting Memory Scheduler (BLISS), which achieves high system performance and fairness while incurring low hardware complexity, based on two observations. First, we find that, to mitigate interference, it is sufficient to separate applications into only two groups. Second, we show that this grouping can be efficiently performed by simply counting the number of consecutive requests served from each application. We evaluate BLISS across a wide variety of workloads/system configurations and compare its performance and hardware complexity, with five state-of-the-art memory schedulers. Our evaluations show that BLISS achieves 5% better system performance and 25% better fairness than the best-performing previous scheduler while greatly reducing critical path latency and hardware area cost of the memory scheduler (by 79% and 43%, respectively), thereby achieving a good trade-off between performance, fairness and hardware complexity.

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