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Dongjoon Kim

Publications and source records attributed to Dongjoon Kim.

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Improved Decoupled Control of Modular Multilevel Converter under Constaint of Nearest Level Modulation via Disturbance Observer Design

Nearest level modulation (NLM) is an attractive modulation method for its implementation simplicity in modular multilevel converter (MMC). However, it introduces significant voltage and current distortion when the number of submodules (SMs) per arm is small, as in medium-voltage applications. While indirect modulation offers fully decoupled control of ac-side current, dc-side current and SM capacitor energy, its performance is fundamentally reliant on accurate arm voltage synthesis, making it incompatible with the large quantization error inherent in NLM. To resolve this conflict, this paper proposes a new control strategy based on a disturbance observer (DOB). The key idea is to estimate and actively compensate for the inevitable arm voltage synthesis error induced by NLM, thereby enabling fully decoupled control of indirect-modulated MMC even under NLM operation with a small number of SMs. A key advantage is its ease of implementation, as it requires no modifications to the conventional NLM and decoupled control structure. The validity and effectiveness of the proposed method in improving current quality and decoupled SM energy control are verified through both simulation and experimental results.

eess.SY

Tunable tunnel barriers in a semiconductor via ionization of individual atoms

We report scanning tunneling microscopy studies of individual adatoms deposited on an InSb(110) surface. The adatoms can be reproducibly dropped off from the STM tip by voltage pulses, and impact tunneling into the surface by up to ~100x. The spatial extent and magnitude of the tunneling effect are widely tunable by imaging conditions such as bias voltage, set current and photoillumination. We attribute the effect to occupation of a (+/0) charge transition level, and switching of the associated adatom-induced band bending. The effect in STM topographic images is well reproduced by transport modeling of filling and emptying rates as a function of the tip position. STM atomic contrast and tunneling spectra are in good agreement with density functional theory calculations for In adatoms. The adatom ionization effect can extend to distances greater than 50 nm away, which we attribute to the low concentration and low binding energy of the residual donors in the undoped InSb crystal. These studies demonstrate how individual atoms can be used to sensitively control current flow in nanoscale devices.

cond-mat.mes-hall