Donglai Zhong | Searcharxiv

arXiv2026

A monolithic fabrication platform for intrinsically stretchable polymer transistors and complementary circuits

Soft, stretchable organic field-effect transistors (OFETs) can provide powerful on-skin signal conditioning, but current fabrication methods are often material-specific: each new polymer semiconductor (PSC) requires a tailored process. The challenge is even greater for complementary OFET circuits, where two PSCs must be patterned sequentially, which often leads to device degradation. Here, we introduce a universal, monolithic photolithography process that enables high-yield, high-resolution stretchable complementary OFETs and circuits. This approach is enabled by a process-design framework that includes (i) a direct, photopatternable, solvent-resistant, crosslinked dielectric/semiconductor interface, (ii) broadly applicable crosslinked PSC blends that preserve high mobility, and (iii) a patterning strategy that provides simultaneous etch masking and encapsulation. Using this platform, we achieve record integration density for stretchable OTFTs (55,000 cm^-2), channel lengths down to 2 um, and low-voltage operation at 5 V. We demonstrate photopatterning across multiple PSC types and realize complementary circuits, including 3 kHz stretchable ring oscillators, the first to exceed 1 kHz and representing more than a 60-fold increase in stage switching speed over the state of the art. Finally, we demonstrate the first stretchable complementary OTFT neuron circuit, where the output frequency is modulated by the input current to mimic neuronal signal processing. This scalable approach can be readily extended to diverse high-performance stretchable materials, accelerating the development and manufacturing of skin-like electronics.

eess.SY↗

arXiv2025

Channel-last gate-all-around nanosheet oxide semiconductor transistors

As we move beyond the era of transistor miniaturization, back-end-of-line-compatible transistors that can be stacked monolithically in the third dimension promise improved performance for low-power electronics. In advanced transistor architectures, such as gate-all-around nanosheets, the conventional channel-first process involves depositing dielectrics directly onto the channel. Atomic layer deposition of gate dielectrics on back-end-of-line compatible channel materials, such as amorphous oxide semiconductors, can induce defects or cause structural modifications that degrade electrical performance. While post-deposition annealing can partially repair this damage, it often degrades other device metrics. We report a novel channel-last concept that prevents such damage. Channel-last gate-all-around self-aligned transistors with amorphous oxide-semiconductor channels exhibit high on-state current ($>$ 1 mA/$μ$m) and low subthreshold swing (minimum of 63 mV/dec) without the need for post-deposition processing. This approach offers a general, scalable pathway for transistors with atomic layer deposited channel materials, enabling the future of low-power three-dimensional electronics.

cond-mat.mtrl-sci↗