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Duc Duy Tran

Publications and source records attributed to Duc Duy Tran.

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Industry-ready spin-photon interfaces for hybrid photonic quantum computing

Hybrid photonic quantum computers, combining stationary matter qubits and flying photonic qubits, offer an intrinsically networked and resource-efficient route to large-scale, error-corrected quantum computation. Their core components are cavity-coupled matter qubits that act as light--matter interfaces, enabling: high-efficiency on-demand single-photon generation, stable near-unity photon indistinguishability and spin--multi-photon entanglement. Semiconductor quantum dots in microcavities are a leading platform for realizing such devices. Yet reaching the performance, reproducibility and spin-coherence thresholds for large-scale error correction remains a major challenge requiring industrial fabrication and control. Here we report thousands of monolithic semiconductor quantum-dot devices fabricated using a III--V pilot production-line process compatible with large-scale deployment. Systematic control of source parameters yields state-of-the-art efficiency and supports a path to optical losses below fault-tolerance thresholds. Using field-quadrature state reconstruction as a stringent joint test of efficiency and indistinguishability, we observe near-unity photon quantum purity stable over tens of minutes and a record single-photon Wigner-function negativity. We further demonstrate seven-partite spin--multi-photon entanglement and spin coherence extendable to microsecond timescales in the low-magnetic-field regime. Finally, photons from distant sources are as indistinguishable as photons emitted successively by a single source. These results establish foundry-compatible III--V quantum dots as a scalable platform for hybrid photonic quantum computing.

quant-ph

First Plasma Atomic Layer Etching of Diamond via O$_2$/Kr Chemistry

We report the first plasma atomic layer etching (ALE) process for diamond using a cyclic plasma sequence composed of two separated steps: oxygen surface modification and krypton ion removal. The process is implemented in an inductively coupled plasma reactor using alternating O$_2$ plasma exposure and low-energy Kr ion bombardment. This cyclic process exhibits the characteristic self-limiting behavior of ALE and enables controlled material removal with atomic-scale precision. An etch depth per cycle of \SI{6.85}{\angstrom} was achieved. Surface analysis reveals that the etched diamond surfaces exhibit lower roughness than the pristine material, while XPS confirms the preservation of the diamond bonding structure and indicates essentially damage-free etching. These results demonstrate that plasma ALE based on O$_2$/Kr chemistry provides a viable route toward damage-controlled nanoscale processing of diamond, opening new opportunities for advanced device fabrication in power electronics, photonics, quantum sensing and quantum computing technologies.

cond-mat.mtrl-sci