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Duc-Duy Tran

Publications and source records attributed to Duc-Duy Tran.

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Near-identical photons from distant quantum dot-cavity devices

Scalable optical quantum technologies require interference between large numbers of indistinguishable single-photons emitted by independent sources. Semiconductor quantum dots are known to be excellent on-demand sources of single-photons. They show record efficiency when inserted into optical cavities to control their spontaneous emission and generate trains of near identical photons over microsecond timescales. However, generating perfectly identical photons from distant cavity-based sources has remained a long-standing challenge. It requires precise matching of the emission wavelengths and emission dynamics, while simultaneously minimizing spectral noise across all time scales for distant emitters in uncorrelated environments. Here, we report on the nanofabrication of a large number of quantum dot-cavity sources with ultra-low spectral noise and wavelength dispersion. The high source efficiency and the use of two tuning mechanisms enable precise optimization of the spectral overlap between distant sources. With this approach, we demonstrate a two-photon indistinguishability of $88\pm1$ % between photons emitted from two distant sources. Remarkably, this value reaches the upper bound set by the intrinsic indistinguishability of photons emitted successively by each source. These results represent a key milestone for scaling photon-based quantum technologies.

quant-ph

Maskless Electron Beam-Induced Etching of Diamond in Air: A Secondary Electron-Driven Mechanism

We report a direct, maskless electron beam-induced etching (EBIE) process for diamond in air, enabling high-precision patterning without lithography or plasma processing. Through a comprehensive analysis of electron-gas, electron-diamond, and gas-surface interactions in the SEM environment, we demonstrate that etching is predominantly governed by low-energy secondary electrons, which drive gas dissociation and radical generation. The resulting oxygen- and nitrogen-based radicals chemisorb on the diamond surface, form volatile carbon-containing species, and desorb under continued electron irradiation, enabling controlled material removal. The process exhibits two distinct regimes: a molecule-limited regime governed by gas flux and an electron-limited regime controlled by current density. Etch depths up to 212 nm and lateral resolution down to 200 nm are achieved. Time-dependent anisotropy is observed, with (100) surfaces transitioning to (111)-faceted morphologies, enhancing etch yield. These results establish a general secondary electron-driven mechanism for EBIE in gas environments, providing a maskless, damage-free nanofabrication route for diamond semiconductor and other chemically inert materials.

cond-mat.mtrl-sci