arXiv subjects

Dwight R. Luhman

Publications and source records attributed to Dwight R. Luhman.

11 recordsLinked to original sources

arXiv2026

Noise-resilient and Scalable Quantum Error Correction for Nuclear Spin Qubits in Silicon with Electron Shuttling

Nuclear spin qubits in silicon are well-isolated from their environment. Consequently, they have very long lifetimes and low sensitivity to noise, but this also suggests that control and measurement is challenging. We introduce electron pair interferometry (EPI), a protocol to overcome this challenge and maintain robustness to noise. EPI is implemented using an array of quantum dots with isoelectronic nuclear spin qubits located in the dots. A pair of electrons are initialized into a singlet ground state, split apart, and shuttled to the dots containing nuclear spin qubits. We show it is possible to coherently transfer the parity of the nuclei onto the measurable state of singlet/triplet-encoded electrons. Global nuclear magnetic resonance (NMR) can be used to change bases and implement dynamical decoupling (DD). Combined with selective hyperfine-induced $Z_π$ rotations, our gate set is complete for universal quantum computation, tailored to Calderbank-Shor-Steane (CSS) quantum error correction, and robust to noise. We discuss very low sensitivity to charge noise and study the sensitivity to both DC and AC magnetic field inhomogeneity which depends strongly on their relative strengths.

quant-ph↗

arXiv2026

Predicting the Slow Drift of Nuclear Spin Noise in Semiconductor Spin Qubits

The dynamics of a nuclear spin bath generates magnetic noise that is a key contributor to the decoherence of electron spin qubits in electrostatically-defined quantum dots. In this paper, we extend the cluster correlation expansion (CCE) technique, which has proven useful for predicting solid-state qubit coherence times across various settings but is limited to shorter time scales, to incorporate stochastic treatments of cluster dynamics in order to efficiently predict slow drifting Overhauser fields over longer time scales. This approach combines quantum evolution with classical rate matrices to enable simulation across a wide range of temporal regimes required to simulate, for example, the long-time convergence of the ergodic $T_2^*$ from Ramsey experiments. Our methodology is validated against experimental data from various silicon spin qubit systems, demonstrating a strong agreement between simulation and measurement of Ramsey experiments presented in the form of $T_2^*$ versus averaging time, autocorrelation functions, as well as power spectral densities. Furthermore, we demonstrate significant back-action effects through modeling and experiment; specifically, the dynamics of the nuclear spin bath depends upon the electron spin occupation schedule. Finally, our modeling quantitatively predicts the benefits from compensating for the slow drift of Overhauser fields in qubit operations. Our findings indicate that compensating for an Overhauser rotation measured $Δt$ in the past results in an effective $T_2^*$, which we denote $\tilde{T}_2^*(Δt)$ for clarity, under certain scenarios of interest, can be one or two orders of magnitude larger than the ergodic $T_2^*$ if the Overhauser rotation is re-characterized every 100 milliseconds; that is, $\tilde{T}_2^*(Δt = 100~{\rm ms})$ can be $10$ to $100$ times larger than $T_2^*$.

cond-mat.mes-hall↗

arXiv2026

Anisotropic spin-valley coupling in SiMOS and Si/SiGe quantum dots

While bulk silicon has long been understood to exhibit relatively weak spin-orbit coupling (SOC), confinement of electrons to quantum dots (QDs) at a silicon heterointerface results in significantly larger SOC. This is a concern for electron spin qubit performance, as intravalley and intervalley SOC can significantly perturb the operation of electron spin qubits. While these interactions can be harnessed to drive coherent rotations in a singlet-triplet qubit, coupling to low-lying excited valley states can lead to undesirable spin relaxation when valley splitting is on resonance with the Zeeman energy. In this work, we measure the angular dependence of the interfacial spin-orbit interaction as a function of the direction and magnitude of an applied external magnetic field in SiMOS and Si/SiGe heterostructures, two common material platforms for silicon spin qubits. We construct a physical model that accurately infers intra- and inter-valley SOC physics from fits to the data, allowing for a direct comparison between these two material systems. For the devices measured we find that, while the $g$-factor differences are comparable, the SiMOS QDs exhibit an order of magnitude larger spin-valley coupling than for Si/SiGe. Moreover, we find that the angular dependence of the spin-valley coupling is similar for both devices, with similar magnetic field orientations minimizing the spin-valley coupling. Our work points towards operational schemes for optimizing spin-valley coupling to avoid or exploit this mechanism for qubit operation.

cond-mat.mes-hall↗

arXiv2024

Dephasing and error dynamics affecting a singlet-triplet qubit during coherent spin shuttling

Quantum information transport over micron to millimeter scale distances is critical for the operation of practical quantum processors based on spin qubits. One method of achieving a long-range interaction is by coherent electron spin shuttling through an array of silicon quantum dots. In order to execute many shuttling operations with high fidelity, it is essential to understand the dynamics of qubit dephasing and relaxation during the shuttling process in order to mitigate them. However, errors arising after many repeated shuttles are not yet well documented. Here, we probe decay dynamics contributing to dephasing and relaxation of a singlet-triplet qubit during coherent spin shuttling over many $N$ repeated shuttle operations. We find that losses are dominated by magnetic dephasing for small $N<10^3$ and by incoherent shuttle errors for large $N>10^3$. Additionally, we estimate shuttle error rates below $1\times10^{-4}$ out to at least $N=10^3$, representing an encouraging figure for future implementations of spin shuttling to entangle distant qubits.

cond-mat.mes-hall↗

arXiv2024

Using a high-fidelity numerical model to infer the shape of a few-hole Ge quantum dot

The magnetic properties of hole quantum dots in Ge are sensitive to their shape due to the interplay between strong spin-orbit coupling and confinement. We show that the split-off band, surrounding SiGe layers, and hole-hole interactions have a strong influence on calculations of the effective $g$ factor of a lithographic quantum dot in a Ge/SiGe heterostructure. Comparing predictions from a model including these effects to raw magnetospectroscopy data, we apply maximum-likelihood estimation to infer the shape of a quantum dot with up to four holes. We expect that methods like this will be useful in assessing qubit-to-qubit variability critical to further scaling quantum computing technologies based on spins in semiconductors.

cond-mat.mes-hall↗

arXiv2022

The remarkable prospect for quantum-dot-coupled tin qubits in silicon

Spin-$\frac{1}{2}$ $^{119}$Sn nuclei in a silicon semiconductor could make excellent qubits. Nuclear spins in silicon are known to have long coherence times. Tin is isoelectronic with silicon, so we expect electrons can easily shuttle from one Sn atom to another to propagate quantum information via a hyperfine interaction that we predict, from all-electron linearized augmented plane wave density functional theory calculations, to be roughly ten times larger than intrinsic $^{29}$Si. A hyperfine-induced electro-nuclear controlled-phase (e-n-CPhase) gate operation, generated (up to local rotations) by merely holding an electron at a sweet-spot of maximum hyperfine strength for a specific duration of time, is predicted to be exceptionally resilient to charge/voltage noise. Diabatic spin flips are suppressed with a modest magnetic field ($>15~$mT for $<10^{-6}$ flip probabilities) and nuclear spin bath noise may be avoided via isotopic enrichment or mitigated using dynamical decoupling or through monitoring and compensation. Combined with magnetic resonance control, this operation enables universal quantum computation.

quant-ph↗

arXiv2022

Thermal activation of low-density Ga implanted in Ge

The nuclear spins of low-density implanted Ga atoms in Ge are interesting candidates for solid state-based qubits. To date, activation studies of implanted Ga in Ge have focused on high densities. Here we extend activation studies into the low-density regime. We use spreading resistance profiling and secondary ion mass spectrometry to derive electrical activation of Ga ions implanted into Ge as a function of rapid thermal anneal temperature and implant density. We show that for our implant conditions the activation is best for anneal temperatures between 400 and 650 $^\circ$C, with a maximum activation of 64% at the highest fluence. Below 400 $^\circ$C, remaining implant damage results in defects that act as superfluous carriers, and above 650 $^\circ$C, surface roughening and loss of Ga ions are observed. The activation increased monotonically from 10% to 64% as the implant fluence increased from $6\times10^{10}$ to $6\times10^{12}$ cm$^{-2}$. The results provide thermal anneal conditions to be used for initial studies of using low-density Ga atoms in Ge as nuclear spin qubits.

cond-mat.mtrl-sci↗

arXiv2021

A silicon singlet-triplet qubit driven by spin-valley coupling

Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar striplines. Here, we demonstrate a novel singlet-triplet qubit operating mode that can drive qubit evolution at frequencies in excess of 200 MHz. This approach offers a means to electrically turn on and off fast control, while providing high logic gate orthogonality and long qubit dephasing times. We utilize this operational mode for dynamical decoupling experiments to probe the charge noise power spectrum in a silicon metal-oxide-semiconductor double quantum dot. In addition, we assess qubit frequency drift over longer timescales to capture low-frequency noise. We present the charge noise power spectral density up to 3 MHz, which exhibits a $1/f^α$ dependence consistent with $α\sim 0.7$, over 9 orders of magnitude in noise frequency.

cond-mat.mes-hall↗

arXiv2021

Effective out-of-plane g-factor in strained-Ge/SiGe quantum dots

Recently, lithographic quantum dots in strained-Ge/SiGe have become a promising candidate for quantum computation, with a remarkably quick progression from demonstration of a quantum dot to qubit logic demonstrations. Here we present a measurement of the out-of-plane $g$-factor for single-hole quantum dots in this material. As this is a single-hole measurement, this is the first experimental result that avoids the strong orbital effects present in the out-of-plane configuration. In addition to verifying the expected $g$-factor anisotropy between in-plane and out-of-plane magnetic ($B$)-fields, variations in the $g$-factor dependent on the occupation of the quantum dot are observed. These results are in good agreement with calculations of the $g$-factor using the heavy- and light-hole spaces of the Luttinger Hamiltonian, especially the first two holes, showing a strong spin-orbit coupling and suggesting dramatic $g$-factor tunability through both the $B$-field and the charge state.

cond-mat.mes-hall↗

arXiv2019

Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon

Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the spins of separated singlet-triplet electron pairs. We observe both intravalley and intervalley mechanisms, each dominant for [110] and [100] magnetic field orientations, respectively, that are consistent with a broken crystal symmetry model. We also observe a third spin-flip mechanism caused by tunneling between the quantum dots. This improved understanding is important for qubit uniformity, spin control and decoherence, and two-qubit gates.

cond-mat.mes-hall↗

arXiv2019

Single and Double Hole Quantum Dots in Strained Ge/SiGe Quantum Wells

Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit control, longer coherence times, and improved extensibility. Recent advances in heterostructure material growth have opened new possibilities for employing hole spins in semiconductors for qubit applications. Undoped, strained Ge/SiGe quantum wells are promising candidate hosts for hole spin-based qubits due to their low disorder, large intrinsic spin-orbit coupling strength, and absence of valley states. Here, we use a simple one-layer gated device structure to demonstrate both a single quantum dot as well as coupling between two adjacent quantum dots. The hole effective mass in these undoped structures, $m$* ~ 0.08 $m$$_0$, is significantly lower than for electrons in Si/SiGe, pointing to the possibility of enhanced tunnel couplings in quantum dots and favorable qubit-qubit interactions in an industry-compatible semiconductor platform.

cond-mat.mes-hall↗