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Dylan Albrecht

Publications and source records attributed to Dylan Albrecht.

9 recordsLinked to original sources

3D tomography of exchange phase in a Si/SiGe quantum dot device

The exchange interaction is a foundational building block for the operation of spin-based quantum processors. Extracting the exchange interaction coefficient $J(\mathbf{V})$, as a function of gate electrode voltages, is important for understanding disorder, faithfully simulating device performance, and operating spin qubits with high fidelity. Typical coherent measurements of exchange in spin qubit devices yield a modulated cosine of an accumulated phase, which in turn is the time integral of exchange. As such, extracting $J(\mathbf{V})$ from experimental data is difficult due to the ambiguity of inverting a cosine, the sensitivity to noise when unwrapping phase, as well as the problem of inverting the integral. As a step toward obtaining $J(\mathbf{V})$, we tackle the first two challenges to reveal the accumulated phase, $\phi(\mathbf{V})$. We incorporate techniques from a wide range of fields to robustly extract and model a 3D phase volume for spin qubit devices from a sequence of 2D measurements. In particular, we present a measurement technique to obtain the wrapped phase, as done in phase-shifting digital holography, and utilize the max-flow/min-cut phase unwrapping method (PUMA) to unwrap the phase in 3D voltage space. We show this method is robust to the minimal observed drift in the device, which we confirm by increasing scan resolution. Upon building a model of the extracted phase, we optimize over the model to locate a minimal-gradient $\pi$ exchange pulse point in voltage space. Our measurement protocol may provide detailed information useful for understanding the origins of device variability governing device yield, enable calibrating device models to specific devices during operation for more sophisticated error attribution, and enable a systematic optimization of qubit control. We anticipate that the methods presented here may be applicable to other qubit platforms.

cond-mat.mes-hall

Multi-level charge fluctuations in a Si/SiGe double quantum dot device

Discrete charge fluctuations, routinely observed in semiconductor quantum dot devices, may contribute significantly to device drift and errors resulting from qubit miscalibration. Understanding the nature and origins of these discrete charge fluctuations may provide insights into material improvements or means of mitigating charge noise in semiconductor quantum dot devices. In this work, we measure multi-level charge fluctuations present in a Si/SiGe double quantum dot device over a range of device operating voltages and temperatures. To characterize the parameter-dependent dynamics of the underlying fluctuating degrees of freedom, we perform a detailed analysis of the measured noise timeseries. We perform algorithmically assisted drift detection and change point detection to detrend the data and remove a slow fluctuator component, as a preprocessing step. We perform model comparison on the post-processed time series between different $n$-level fluctuator ($n$LF) factorial hidden Markov models (FHMMs), finding that although at most sweep values the independent pair of 2LFs model would be preferred, in a particular region of voltage space the 4LF model outperforms the other models, indicating a conditional rate dependence between the two fluctuators. By tracking fluctuator transition rates, biases, and weights over a range of different device configurations, we estimate gate voltage and conductivity sensitivity. In particular, we fit a phenomenological, detailed balance model to the extracted independent 2LFs rate data, yielding lever arm estimates in the range of $-2 \mu$eV/mV up to $4 \mu$eV/mV between the two 2LFs and nearby gate electrodes. We expect that these characterization results may aid in subsequent spatial triangulation of the charge fluctuators.

cond-mat.mes-hall

Model validation and error attribution for a drifting qubit

Qubit performance is often reported in terms of a variety of single-value metrics, each providing a facet of the underlying noise mechanism limiting performance. However, the value of these metrics may drift over long time-scales, and reporting a single number for qubit performance fails to account for the low-frequency noise processes that give rise to this drift. In this work, we demonstrate how we can use the distribution of these values to validate or invalidate candidate noise models. We focus on the case of randomized benchmarking (RB), where typically a single error rate is reported but this error rate can drift over time when multiple passes of RB are performed. We show that using a statistical test as simple as the Kolmogorov-Smirnov statistic on the distribution of RB error rates can be used to rule out noise models, assuming the experiment is performed over a long enough time interval to capture relevant low frequency noise. With confidence in a noise model, we show how care must be exercised when performing error attribution using the distribution of drifting RB error rate.

quant-ph

Characterization of individual charge fluctuators in Si/SiGe quantum dots

Electron spins in silicon quantum dots are excellent qubits due to their long coherence times, scalability, and compatibility with advanced semiconductor technology. Although high gate fidelities can be achieved with spin qubits, charge noise in the semiconductor environment still hinders further improvements. Despite the importance of charge noise, key questions about the specific nature of the fluctuators that cause charge noise remain unanswered. Here, we probe individual two-level fluctuators (TLFs) in Si/SiGe quantum dots through simple quantum-dot transport measurements and analyses based on the Allan variance and factorial hidden Markov modeling. We find that the TLF switching times depend sensitively on gate voltages, decrease with temperature, and depend on the current through a nearby quantum dot. A model for the data of the primary TLF we study indicates that it may be a bistable charge dipole near the plunger gate electrode, heated by current through the sensor dot, and experiencing state transitions driven not by direct electron-phonon coupling but through some other mechanism such as coupling to electrons passing through the sensor dot.

cond-mat.mes-hall

NoMoPy: Noise Modeling in Python

NoMoPy is a code for fitting, analyzing, and generating noise modeled as a hidden Markov model (HMM) or, more generally, factorial hidden Markov model (FHMM). This code, written in Python, implements approximate and exact expectation maximization (EM) algorithms for performing the parameter estimation process, model selection procedures via cross-validation, and parameter confidence region estimation. Here, we describe in detail the functionality implemented in NoMoPy and provide examples of its use and performance on example problems.

stat.CO

Deconstructing Superconductivity

We present a dimensionally deconstructed model of an s-wave holographic superconductor. The 2+1 dimensional model includes multiple charged Cooper pair fields and neutral exciton fields that have interactions governed by hidden local symmetries. We derive AdS/CFT-like relations for the current and charge density in the model, and we analyze properties of the Cooper pair condensates and the complex conductivity.

hep-th

Nonlinear Boundary Dynamics and Chiral Symmetry in Holographic QCD

In a hard-wall model of holographic QCD, we find that nonlinear boundary dynamics are required in order to maintain the correct pattern of explicit and spontaneous chiral symmetry breaking beyond leading order in the pion fields. With the help of a field redefinition, we relate the requisite nonlinear boundary conditions to a standard Sturm-Liouville system. Observables insensitive to the chiral limit receive only small corrections in the improved description, and classical calculations in the hard-wall model remain surprisingly accurate.

hep-ph

Weighted Power Counting and Perturbative Unitarity

We consider the relationship between renormalizability and unitarity at a Lifshitz point in d dimensions. We test tree unitarity for theories containing only scalars and fermions, and for pure gauge theory. In both cases, we find the requirement of weighted power-counting renormalizability is equivalent to that of tree unitarity.

hep-th

Pion condensation in holographic QCD

We study pion condensation at zero temperature in a hard-wall holographic model of hadrons with isospin chemical potential. We find that the transition from the hadronic phase to the pion condensate phase is first order except in a certain limit of model parameters. Our analysis suggests that immediately across the phase boundary the condensate acts as a stiff medium approaching the Zel'dovich limit of equal energy density and pressure.

hep-ph