arXiv subjects

E. A. Lavrukhina

Publications and source records attributed to E. A. Lavrukhina.

5 recordsLinked to original sources

arXiv2026

Electrically driven Rabi dynamics of magnetic-field-induced corner states in a two-dimensional topological insulator

We study coherent electric manipulation of magnetic-field-induced localized states at a double kink of a helical edge in a HgTe/CdHgTe quantum well. An in-plane magnetic field opens a gap in the one-dimensional edge spectrum, while changes in the edge orientation generate localized in-gap states at the kinks. We show that, for suitable geometry and magnetic-field direction, two such states form an effective lithographically defined two-level subsystem. Using an edge-state model that includes both the localized levels and the fully propagating 1D edge states outside the magnetic-field-induced gap, we calculate the electric-dipole matrix elements and solve the time-dependent problem under resonant driving. The resulting dynamics exhibits Rabi oscillations with linear frequencies of $20$--$40$~GHz for realistic parameters. We find that the propagating 1D edge states provide a leakage channel whose strength is strongly controlled by the driving amplitude: reducing the electric field suppresses leakage below the percent level while preserving GHz-scale coherent oscillations. These results establish a route from magnetic-field-induced corner-state physics to electrically driven two-level dynamics in a realistic two-dimensional topological-insulator edge geometry.

cond-mat.mes-hall↗

arXiv2022

Formation of bound states from the edge states of 2D topological insulator by macroscopic magnetic barriers

A model of bound state formation from the delocalized edge states of 2D topological insulator is derived by considering the effects of magnetic barriers attached to the edge of the HgTe/CdTe quantum well. The resulting structure has a spatial form of 1D quantum dot with variable number of bound states depending on barrier parameters. The spatial profile of exchange interaction between the edge states and barriers is derived from the interaction with single impurity magnetic moment and is generalized for the barrier bulk structure formed by ensemble of impurities. The resulting Hamiltonian is studied as a function of barrier parameters including their strength and orientation of the magnetic moments. It is shown that for parallel magnetization of two barriers at least two discrete levels are formed regardless of the barrier strength. For antiparallel magnetization at least a single bound state is formed for any strength of the barriers. Our results may help in design of novel types of quantum dots based on topological insulators.

cond-mat.mes-hall↗

arXiv2021

Quasistationary states in a quantum dot formed at the edge of a topological insulator by magnetic barriers with finite transparency

A model of quasistationary states is constructed for the one-dimensional edge states propagating along the edge of a two-dimensional topological insulator based on HgTe/CdTe quantum well in the presence of magnetic barriers with finite transparency. The lifetimes of these quasistationary states are found analytically and numerically via different approaches including the solution of the stationary Schroedinger equation with complex energy and the solution of the transmission problem for a double barrier structure. The results can serve as a guide for determining the parameters of magnetic barriers creating the quantum dots where the lifetimes for the broadened discrete levels are long enough for manipulation with their occupation numbers by external fields.

cond-mat.mes-hall↗

arXiv2020

Spin rotation by resonant electric field in few-level quantum dots: Floquet dynamics and tunneling

We study electric dipole spin resonance caused by sub-terahertz (THz) radiation in a multilevel finite-size quantum dot formed in a nanowire focusing on the range of driving electric fields amplitudes where a strong interplay between the Rabi spin oscillations and tunneling from the dot to continuum states can occur. A strong effect of the tunneling on the spin evolution in this regime occurs due to formation of mixed spin states. As a result, the tunneling strongly limits possible spin manipulations time. We demonstrate a backaction of the spin dynamics on the tunneling and position of the electron. The analysis of the efficiency of the spin manipulation in terms of the system energy shows that tunneling decreases this efficiency. Fourier spectra of the time-dependent expectation value of the electron position show a strong effect of the spin-orbit coupling on their low-frequency components. This results can be applied to operational properties of spin-based nanodevices and extending the range of possible spin resonance frequencies to the THz domain.

cond-mat.mes-hall↗

arXiv2019

Electric dipole spin resonance at shallow donors in quantum wires

Electric dipole spin resonance is studied theoretically at a shallow donor formed in a nanowire with spin-orbit coupling in a magnetic field. Such system may represent a donor-based qubit. The single discrete energy level of the donor is accompanied by the set of continuum states, which provide a non-trivial interplay for the picture of electric dipole spin resonance driven by an external monochromatic field. Strongly nonlinear dependencies of spin flip time as well as of the coordinate mean values on the electric field amplitude are observed, demonstrating the significance of coupling to the continuum for spin-based qubits manipulation in nanostructures.

cond-mat.mes-hall↗