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E. A. Moujaes

Publications and source records attributed to E. A. Moujaes.

3 recordsLinked to original sources

Chalcogen Impurity Barriers in 2D Systems via Semi-Empirical/Machine Learning Modeling: A Survey over 4000 Materials

Adequate characterization of two-dimensional materials with low energy barriers for impurity adsorption is key for advancing applications based on catalysis, sensing, and surface functionalization. However, first-principles methods, such as DFT, are often computationally extremely expensive for feasible large-scale screenings. Given such a scenario, we address a data-driven approach which integrates the semi-empirical Extended Huckel Method with machine learning techniques to estimate adsorption energy barriers in the case of three relevant chalcogen impurities, S, Se and Te. With this aim, we consider the 4036 2D materials found in the C2DB. The scheme employs the EHM to compute energy profiles along three in-plane migration paths, from which average barriers can be derived. The equilibrium distance between the impurity and the 2D surface is not calculated from a tie-consuming geometry optimization. Instead, it is estimated from a simple effective phenomenological expression. Physicochemical descriptors are then obtained from the Matminer library for curated features. Four different ML models are tested, with the XGBoost leading to the highest performance. We further use SHAP to verify the resulting predictions, focusing on the $\sim1,500$ materials displaying the lowest barrier values. As it could be anticipated, we establish that the average valence electron count, electronegativity, and atomic number are typically the most relevant attributes to validate the ML model. But we also are able to determine, for the different chalcogen atoms, which other few descriptors likewise considerably influence the adsorption properties. Our results show that when combined with interpretable ML protocols, EHM can produce a scalable framework for choosing 2D structures that exhibit the desired capture/release dynamics pertinent in a variety of utilization.

cond-mat.mtrl-sci↗

Theoretical chemistry of $α$-graphyne: functionalization, symmetry breaking, and generation of Dirac-fermion mass

We investigate the electronic structure and lattice stability of pristine and functionalized (with either hydrogen or oxygen) $α$-graphyne systems. We identify lattice instabilities due to soft-phonon modes, and describe two mechanisms leading to gap opening in the Dirac-fermion electronic spectrum of these systems: symmetry breaking, connected with the lattice instabilities, and partial incorporation of an $sp^3$-hybrid character in the covalent-bonding network of a buckled hydrogenated $α$-graphyne lattice that retains the symmetries of the parent pristine $α$-graphyne. In the case of an oxygen-functionalized $α$-graphyne structure, each O atom binds asymmetrically to two twofold-coordinated C atoms, breaking inversion and mirror symmetries, and leading to the opening of a sizeable gap of 0.22 eV at the Dirac point. Generally, mirror symmetries are found to suffice for the occurrence of gapless Dirac cones in these $α$-graphyne systems, even in the absence of inversion symmetry centers. Moreover, we analyze the gapless and gapped Dirac cones of pristine and functionalized $α$-graphynes from the perspective of the dispersion relations for massless and massive free Dirac fermions. We find that mirror-symmetry breaking mimics a Dirac-fermion mass-generation mechanism in the oxygen-functionalized $α$-graphyne, leading to gap opening and to isotropic electronic dispersions with a rather small electron-hole asymmetry. In the hydrogen-functionalized case, we find that carriers show a remarkable anisotropy, behaving as massless fermions along the M-K line in the Brillouin zone and as massive fermions along the $Γ$-K line.

cond-mat.mtrl-sci↗

On the inner Double-Resonance Raman scattering process in bilayer graphene

The dispersion of phonons and the electronic structure of graphene systems can be obtained experimentally from the double-resonance (DR) Raman features by varying the excitation laser energy. In a previous resonance Raman investigation of graphene, the electronic structure was analyzed in the framework of the Slonczewski-Weiss-McClure (SWM) model, considering the outer DR process. In this work we analyze the data considering the inner DR process, and obtain SWM parameters that are in better agreement with those obtained from other experimental techniques. This result possibly shows that there is still a fundamental open question concerning the double resonance process in graphene systems.

cond-mat.mes-hall↗